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Volume 44 Issue 9
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CHEN Zhengchao, TANG Libin, HAO Qun, WANG Shanli, ZHUANG Jisheng, KONG Jincheng, ZUO Wenbin, JI Rongbin. Research Progress on Infrared Detection Materials and Devices of HgCdTe Multilayer Heterojunction[J]. Infrared Technology , 2022, 44(9): 889-903.
Citation: CHEN Zhengchao, TANG Libin, HAO Qun, WANG Shanli, ZHUANG Jisheng, KONG Jincheng, ZUO Wenbin, JI Rongbin. Research Progress on Infrared Detection Materials and Devices of HgCdTe Multilayer Heterojunction[J]. Infrared Technology , 2022, 44(9): 889-903.
shu

Research Progress on Infrared Detection Materials and Devices of HgCdTe Multilayer Heterojunction

  • 1.

    School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China

  • 2.

    Kunming Institute of Physics, Kunming 650223, China

  • 3.

    Yunnan Key Laboratory of Advanced Photoelectric Materials and Devices, Kunming 650223, China

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  • Received Date: June 13, 2022
  • Revised Date: August 29, 2022
    Graphical Abstract
    • Abstract
  • The HgCdTe multilayer heterojunction technology is an important direction for the development of mainstream infrared detectors in the future, playing an important role in high-performance infrared detectors, such as high operating temperature (HOT) detectors, dual/multicolor detectors, and avalanche photodiodes (APDs). Recently, HgCdTe HOT infrared detectors based on multilayer heterojunction technology have been developed, particularly devices based on the barrier and non-equilibrium operating P+-π(ν)-N+ structure have been widely studied. In this review, the dark current suppression mechanisms of P+-π(ν)-N+ structure HgCdTe infrared detectors with barrier and non-equilibrium operations were systematically introduced, the key problems that restrict the development of these two types of devices were analyzed, and the relevant research progress was reviewed. We summarized and assessed the prospects of the development of multilayer heterojunction HgCdTe infrared detectors.
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    • References (97)
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