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金掺杂碲镉汞红外探测材料及器件技术

宋林伟 孔金丞 李东升 李雄军 吴军 秦强 李立华 赵鹏

宋林伟, 孔金丞, 李东升, 李雄军, 吴军, 秦强, 李立华, 赵鹏. 金掺杂碲镉汞红外探测材料及器件技术[J]. 红外技术, 2021, 43(2): 97-103.
引用本文: 宋林伟, 孔金丞, 李东升, 李雄军, 吴军, 秦强, 李立华, 赵鹏. 金掺杂碲镉汞红外探测材料及器件技术[J]. 红外技术, 2021, 43(2): 97-103.
SONG Linwei, KONG Jincheng, LI Dongsheng, LI Xiongjun, WU Jun, QIN Qiang, LI Lihua, ZHAO Peng. Au-Doped HgCdTe Infrared Material and Device Technology[J]. Infrared Technology , 2021, 43(2): 97-103.
Citation: SONG Linwei, KONG Jincheng, LI Dongsheng, LI Xiongjun, WU Jun, QIN Qiang, LI Lihua, ZHAO Peng. Au-Doped HgCdTe Infrared Material and Device Technology[J]. Infrared Technology , 2021, 43(2): 97-103.

金掺杂碲镉汞红外探测材料及器件技术

详细信息
    作者简介:

    宋林伟(1989-),男,硕士,工程师,主要从事红外材料与器件研究,E-mail:songlinwei0111@163.com

    通讯作者:

    孔金丞(1979-),男,博士,研究员,主要从事红外材料与器件研究,E-mail:kongjincheng@163.com

  • 中图分类号: TN215

Au-Doped HgCdTe Infrared Material and Device Technology

  • 摘要: 采用金掺杂替代作为深能级缺陷中心的汞空位,可明显提高P型碲镉汞材料少子寿命,进而降低以金掺杂P型材料为吸收层n-on-p型碲镉汞器件的暗电流,明显提升了n-on-p型碲镉汞器件性能,是目前高灵敏度、高分辨率等高性能n-on-p型长波/甚长波以及高工作温度中波碲镉汞器件研制的一种技术路线选择。本文在分析评述金掺杂碲镉汞材料现有研究技术要点的基础上,结合昆明物理研究所目前的研究成果,总结了碲镉汞金掺杂相关工艺技术,重点分析了金掺杂对碲镉汞器件性能的影响。
  • 图  1  不同器件结构下碲镉汞器件性能对比

    Figure  1.  The performance of HgCdTe detectors for various growth techniques and different diode structures

    图  2  Au掺杂碲镉汞材料退火前后Au原子分布对比

    Figure  2.  Depth distributions of Au atom concentration in Au-doped HgCdTe materials as rown and annealed in an Hg-rich state

    图  3  77 K下Au/Cu掺杂与VHg型P型材料不同载流子浓度下的少子寿命

    Figure  3.  Measured and calculated lifetimes as a function of carrier concentration at 77 K

    图  4  不同掺杂工艺中暗电流随温度变化曲线

    Figure  4.  Dark current versus temperature for different technologies

    图  5  Au、Cu掺杂中波器件的R0A值随温度变化关系图

    Figure  5.  R0A versus temperature for Au/Cu doped HgCdTe

    图  6  德国AIM公司中波高温器件技术路线

    Figure  6.  The technical route of AIM for high operating temperature detector

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出版历程
  • 收稿日期:  2020-08-12
  • 修回日期:  2020-09-05
  • 刊出日期:  2021-02-20

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