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Volume 44 Issue 11
Nov.  2022
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HE Feng, XU Bo, LAN Zhengli, SONG Yiji, ZENG Qingping. High-Performance Near-Infrared Photodetector Based on a Graphene/Silicon Microholes Array Heterojunction[J]. Infrared Technology , 2022, 44(11): 1236-1242.
Citation: HE Feng, XU Bo, LAN Zhengli, SONG Yiji, ZENG Qingping. High-Performance Near-Infrared Photodetector Based on a Graphene/Silicon Microholes Array Heterojunction[J]. Infrared Technology , 2022, 44(11): 1236-1242.
shu

High-Performance Near-Infrared Photodetector Based on a Graphene/Silicon Microholes Array Heterojunction

  • 1.

    Key Laboratory of Thin Film Sensing Technology for National Defense of Hunan Province, China Electronics Technology Group Corporation 48th Research Institute, Changsha 410111, China

  • 2.

    Key Laboratory of High-performance Intelligent Sensor and Detection System of Hunan Province, Changsha 410111, China

  • 3.

    Astronaut Research and Training Center of China, Beijing 100094, China

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  • Received Date: May 24, 2022
  • Revised Date: July 04, 2022
    Graphical Abstract
    • Abstract
  • This paper reports a heterojunction photodetector constructed from a graphene and silicon microhole array that possesses high-performance near-infrared light detection capabilities. The silicon microhole array constructed by photolithography and reactive ion etching has a smooth surface, which ensures a low surface carrier recombination rate. Meanwhile, the hole-array structure can effectively suppress the reflection of incident light, increase the effective illumination area, and improve the photoabsorption efficiency of the graphene/silicon heterojunction, thereby improving the responsivity of the device. The device exhibits evident current rectification characteristics under a ±3 V bias, with a rectification ratio of 4.30 ×105, and a current on-off ratio of 9.20×105 under irradiation with 810 nm incident light with a power density of 4.25 mW/cm2. Under the illumination of 810 nm with the power intensity of 118 μW/cm2, the current responsivity of the photodetector can reach 679.70 mA/W, and the specific detectivity is 3.40×1012 Jones. The voltage responsivity reaches 1.79×106 V/W at an incident power intensity of 7 μW/cm2. More importantly, the device exhibited a swift response speed with rise/decay times of 20/21.3 μs. Compared with commercial Si-based photodiodes, the graphene/silicon microhole array photodetector has features, including a simple device geometry and simplified fabrication processes, that may significantly reduce the fabrication cost. The results demonstrate the substantial potential of graphene/silicon microhole array heterojunction photodetectors for low-cost, stable, and efficient near-infrared light detection applications in the future.
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    • References (17)
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