Citation: | ZHAO Yongyi, CHANG Jianhua, SHEN Wan, ZHAO Zhengjie, FANG Jiulong. NDIR Sensor for CH4 and CO2 Gas Concentration Detection in Mines[J]. Infrared Technology , 2019, 41(8): 778-785. |
[1] | WANG Wenjin, KONG Jincheng, QI Wenbin, ZHANG Yang, SONG Linwei, WU Jun, ZHAO Wen, YU Jianyun, QIN Gang. Research Progress on Materials and Devices of HgCdTe p-on-n Double Layer Heterojunction Grown by VLPE[J]. Infrared Technology , 2024, 46(3): 233-245. |
[2] | LI Zhongliang, CHEN Jiancai, YE Wei, LI Zengshou, LIU Shineng. Liquid Phase Epitaxy of n-on-p InSb Film[J]. Infrared Technology , 2016, 38(7): 577-580. |
[3] | KANG Rong, ZHU Pei-ling, YUAN Shou-zhang, ZHANG Peng, HUAN Jian. The Operating Form of P-n Photovoltaic Detector[J]. Infrared Technology , 2010, 32(9): 546-548. DOI: 10.3969/j.issn.1001-8891.2010.09.012 |
[4] | YUAN Shou-zhang, ZHANG Peng, KANG Rong, HAN Fu-zhong. A Spectral Phenomenon's Explanation of n-on-p Long Wavelength HgCdTe Photovoltaic Device[J]. Infrared Technology , 2010, 32(4): 223-225. DOI: 10.3969/j.issn.1001-8891.2010.04.009 |
[5] | XIANG Jun-rong, LI Ming-hua, ZHANG Lei. Research of Polishing Technology for InSb Semiconductor Materials[J]. Infrared Technology , 2009, 31(11): 625-627. DOI: 10.3969/j.issn.1001-8891.2009.11.002 |
[6] | GONG Xiao-xia, SU Yu-hui, LEI Sheng-qiong, WAN Rui-min, YANG Wen-yun. Design of ion Implantation of InSb p-on-n Photovoltaic Devices[J]. Infrared Technology , 2009, 31(4): 232-235. DOI: 10.3969/j.issn.1001-8891.2009.04.012 |
[7] | Mechanism Analysis of P-HgCdTe Ion Milling Junction[J]. Infrared Technology , 2007, 29(2): 71-75. DOI: 10.3969/j.issn.1001-8891.2007.02.003 |
[8] | Dark Current Characteristics Analyses of HgCdTe Photovoltaic Detectors with Vertical p-n Junction[J]. Infrared Technology , 2006, 28(8): 474-477. DOI: 10.3969/j.issn.1001-8891.2006.08.010 |
[9] | The Analysis of HgCdTe Loophole p-n Junction's Abnormal Characteristics[J]. Infrared Technology , 2002, 24(6): 81-85. DOI: 10.3969/j.issn.1001-8891.2002.06.019 |
[10] | A Theoretical Analysis of Looppole p-n Junction[J]. Infrared Technology , 2002, 24(1): 27-29,37. DOI: 10.3969/j.issn.1001-8891.2002.01.008 |
1. |
沈成,李萌萌,郭立升,曹孙根,魏宇学,蔡梦蝶,孙松. Ga_2O_3和K_2O含量对铋系玻璃粉形貌和结构的影响. 中国粉体技术. 2022(05): 24-29 .
![]() | |
2. |
李维勤,霍志胜,蒲红斌. 电介质/半导体结构样品电子束感生电流瞬态特性. 物理学报. 2020(06): 7-16 .
![]() |