| Citation: |
SHEN Xu, CHENG Xiaohui, WANG Xinzheng. Infrared Dim-small Object Detection Algorithm Based on Adaptive Scale Local Contrast Enhancement Combined with Visual Attention Mechanism[J]. Infrared Technology , 2019, 41(8): 764-771.
|
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| [2] | LI Zhongliang, CHEN Jiancai, YE Wei, LI Zengshou, LIU Shineng. Liquid Phase Epitaxy of n-on-p InSb Film[J]. Infrared Technology , 2016, 38(7): 577-580. |
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| 1. |
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| |
| 2. |
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