Citation: | LIN Zhanwen, HAN Fuzhong, LI Xiongjun, GENG Song, SHI Qi, HU Yanbo, YANG Chaowei, LIN Yang. Study on the Influence of CdTe Passivation Film Sputtering Power on HgCdTe Device Performance[J]. Infrared Technology , 2018, 40(8): 733-738. |
[1] | SU Yongqiang. Application of Metal C Ring in Stirling Cryocooler[J]. Infrared Technology , 2022, 44(7): 757-762. |
[2] | ZHOU Weijia, GONG Xiaoxia, CHEN Dongqiong, XIAO Tingting, SHANG Falan, YANG Wenyun. Effect of Annealing on C-V Characteristics of InSb Metal-Insulator-Semiconductor Devices[J]. Infrared Technology , 2022, 44(4): 351-356. |
[3] | Study on the Hydrogenation Treatment of Long Wavelength HgCdTe Material Surface[J]. Infrared Technology , 2018, 40(7): 668-672,711. |
[4] | LI Li, WANG Zhenzhou, SHI Peng, LIU Ziwei, SONG Yahuan, YU Hongwei. Infrared Spectroscopy Study of Thiourea VN-C=S[J]. Infrared Technology , 2017, 39(1): 95-102. |
[5] | CHANG Ming, YUN Haili, ZHANG Donghong, CHEN Yuewan, WANG Shuru, DU Jing, ZHAO Chenxiao, YU Hongwei. Study on Fourier Transform Attenuated Total Reflection Two-dimensional Infrared Spectroscopy of Polyvinyl Chloride C-Cl Stretching Vibration[J]. Infrared Technology , 2016, 38(6): 529-535. |
[6] | LI Xiong-jun, HAN Fu-zhong, LI Dong-sheng, LI Li-hua, HU Yan-bo, KONG Jin-cheng, ZHU Ying-feng, ZHUANG Ji-sheng, JI Rong-bin. A Study of Interface Electrical Characteristics for MW HgCdTe/Passivation Layer[J]. Infrared Technology , 2015, (10): 868-872. |
[7] | WANG Hong, LI Xing-guo. Anti-reconnaissance and Anti-jamming Performance Research of V-band Fuze[J]. Infrared Technology , 2011, 33(9): 533-536. DOI: 10.3969/j.issn.1001-8891.2011.09.010 |
[8] | HUANG Qian, ZHANG Tao, LV Yin-huan, CUI Wen-nan. Research of Infrared Target Images Simulation Based on Visual C++ and OpenGL[J]. Infrared Technology , 2010, 32(2): 101-104. DOI: 10.3969/j.issn.1001-8891.2010.02.010 |
[9] | Design of the Infrared R-C Optical System[J]. Infrared Technology , 2004, 26(2): 60-63. DOI: 10.3969/j.issn.1001-8891.2004.02.016 |
[10] | The Manufacture of HgCdTe MIS Device and Its C-V Character[J]. Infrared Technology , 2002, 24(5): 42-45. DOI: 10.3969/j.issn.1001-8891.2002.05.011 |
1. |
徐港,戴永喜,何斌,郑天亮,王娇. CdTe/ZnS膜层致密度对碲镉汞器件性能的影响研究. 红外. 2024(12): 19-25 .
![]() |