Advanced Search
中文
Volume 43 Issue 6
Jun.  2021
Turn off MathJax
Article Contents
Abstract
References
Related Articles
YUAN Shouzhang, ZHAO Wen, KONG Jincheng, JIANG Jun, ZHAO Zenglin, JI Rongbin. Influence of Cd-rich Annealing on Position-dependent Conductivity Transition in Cd1-xZnxTe Crystal[J]. Infrared Technology , 2021, 43(6): 517-522.
Citation: YUAN Shouzhang, ZHAO Wen, KONG Jincheng, JIANG Jun, ZHAO Zenglin, JI Rongbin. Influence of Cd-rich Annealing on Position-dependent Conductivity Transition in Cd1-xZnxTe Crystal[J]. Infrared Technology , 2021, 43(6): 517-522.
shu

Influence of Cd-rich Annealing on Position-dependent Conductivity Transition in Cd1-xZnxTe Crystal

  • Kunming Institute of Physics, Kunming 650223, China

More Information
  • Received Date: April 18, 2021
  • Revised Date: May 12, 2021
    Graphical Abstract
    • Abstract
  • In this study, Cd1-xZnxTe(x=0.04) crystals were grown using the Te-rich Vertical Bridgman(VB) method. A position-dependent conductivity transition was found in some of the as-grown Cd1-xZnxTe ingots, which caused significant nonuniformity in the Hg1-yCdyTe(MCT) focal plane array(FPA) response map. Cd-rich annealing experiments were performed on Cd1-xZnxTe ingots with position-dependent conductivity transition, and the relationships between the position-dependent conductivity transition and annealing conditions, including annealing time, temperature, and Cd partial pressure, were studied. Furthermore, by understanding the formation mechanism of Cd vacancies and Cd interstitials, we found that Cd vacancies can be reduced during Cd1-xZnxTe ingot growth.
    • FullText(HTML)
    • References (19)
  • [1]
    Gurgenian H K. Another source of MCT detectors[J]. Laser Focus World, 1992, 28: 51.
    [2]
    Reibel Y, Rublado L, Bonnouvrier G, et al. Latest developments in advanced MCT infrared cooled detectors[J]. Electro-Optical and Infrared Systems: Technology and Applications VⅢ, 2011: 8185: 818503. DOI: 10.1117/12.797439.full
    [3]
    Reddy M, Peterson J M, Lofgreen D D, et al. HgCdTe growth on 6 cm×6 cm CdZnTe substrates for large-format dual-band infrared focal-plane arrays[J]. Journal of Electronic Materials, 2010, 39(7): 974-980. DOI: 10.1007/s11664-010-1141-4
    [4]
    Johnson S M, James J B, Ahlgren W L, et al. Heteroepitaxial HgCdTe/ CdZnTe/Gaas/Si materials for infrared focal plane arrays[J]. Long -wavelength Semiconductor Devices, Materials, and Processes, 1991, 216: 141-146. http://journals.cambridge.org/article_S1946427400498295
    [5]
    SHENG F F, ZHOU C H, SUN S W, et al. Influences of Te-rich and Cd-rich precipitates of CdZnTe substrates on the surface defects of HgCdTe liquid-phase epitaxy materials[J]. J. Electron Mater, 2014, 43: 1397-1402. DOI: 10.1007/s11664-014-3110-9
    [6]
    Yoshikawa M. Dislocations in Hg1−xCdxTe/Cd1−zZnzTe epilayers grown by liquid-phase epitaxy[J]. J. Appl. Phys. , 1988, 63: 1533-1540. DOI: 10.1063/1.339937
    [7]
    Yoshikawa M. Dislocations in Hg1-xCdxTe/Cd1-zZnzTe epilayers grown by liquid-phase epitaxy[J]. J. Appl. Phys. , 1988, 63: 1533-1540. DOI: 10.1063/1.339937
    [8]
    Sen S, Konkel W H, Tighe S J, et al. Crystal-growth of large-area single-crystal CdTe and CdZnTe by the computer-controlled vertical modified-Bridgman process[J]. J. Cryst Growth, 1988, 86: 111-117. DOI: 10.1016/0022-0248(90)90707-R
    [9]
    赵文, 孔金丞, 姜军, 等. Cd1-xZnxTe晶体中由本征缺陷引起的导电类型转变界面[J/OL][2021-06-17]. https://kns.cnki.net/kcms/detail/53.1053.TN.20210616.1310.002.html.

    ZHAO Wen, KONG Jincheng, JIANG Jun. Position-dependent conductivity transition in Cd1-xZnxTe crystal[J/OL][2021-06-17]. https://kns.cnki.net/kcms/detail/53.1053.TN.20210616.1310.002.html.
    [10]
    Rubaldo L, Guinedor P, Brunner A, et al. Achievement of high image quality MCT sensors with Sofradir vertical industrial model[C]//Proc. of SPIE, 2018, 10624: 106240U.
    [11]
    Ahluwalia G K, Patro R. Infrared Detectors[M]. Springer International Publishing, 2017.
    [12]
    Johnson S M, Delyon T J, Cockrum C A, et al. Direct growth of CdZnTe/Si substrates for large-area HgCdTe infrared focal-plane arrays[J]. J. Electron Mater, 1995, 24: 467-473. DOI: 10.1007/BF02657949
    [13]
    Aguirre M, Canepa H, Heredia E, et al. Photovoltaic Hg1-xCdxTe(MCT) detectors for infrared radiation[J]. An Asoc Quim Argent, 1996, 84: 67-72. http://www.researchgate.net/publication/235953484_Photovoltaic_Hg1-xCdxTe_MCT_detectors_for_infrared_radiation
    [14]
    Belas E, Bugaxr M, Grill R, et al. Elimination of inclusions in (CdZn) Te substrates by post-grown annealing[J]. J. Electron. Mater. , 2007, 36: 1025. DOI: 10.1007/s11664-007-0167-8
    [15]
    YANG G, Bolotnikov A E, Fochuk P M, et al. Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors[J]. Journal of Crystal Growth, 2013, 379: 16-20. DOI: 10.1016/j.jcrysgro.2012.11.041
    [16]
    YANG G, Bolotnikov A E, Fochuk P M, et al. Effects of thermal annealing on the structural properties of CdZnTe crystals[C]// Proceedings of SPIE- The International Society for Optical Engineering, 2011, 8142(6): 814217.
    [17]
    Segall M D, Lindan P, Probert, M J, et al. First-principles simulation: ideas, illustrations and the CASTEP code[J]. Journal of Physics Condensed Matter, 2002, 14(11): 2717-2744. DOI: 10.1088/0953-8984/14/11/301
    [18]
    Fornes T D, Carruthers S B, Huffman N D. Method for Shielding a Substrate From Electromagnetic Interference[P]. US: PCT/US2010/ 038264[2010-12-16].
    [19]
    Koyama A, Hichiwa A, Hirano R. Recent progress in CdZnTe crystals[J]. Journal of Electronic Materials, 1999, 28: 683-687. DOI: 10.1007/s11664-999-0054-6
    • Related Articles

  • Related Articles

    [1]WANG Chongwen, PENG Tinghai, LUO Rui, LIU Jian, YANG Yuping, WANG Shijin, YAN Tingyu, GE Fan, LIU Yanfang, LIU Yunhong. Tropical Marine Environmental Adaptability of Germanium Coated Infrared Antireflection Film[J]. Infrared Technology , 2024, 46(8): 957-964.
    [2]WANG Qiaofang, WANG Chongwen, ZHENG Wanxiang, LIU Jian, LUO Rui, ZHAO Yuanrong. Corrosion Properties of Phosphate Glass Filter under Different Environments[J]. Infrared Technology , 2020, 42(10): 947-952.
    [3]CHENG Haijuan, YANG Weisheng, CAI Yi, YU Xiaohui, LI Rujie, WANG Ke, ZHAO Jinsong, WANG Lingxue. High-Performance LWIR Antireflective Films Fabrication on Ge Substrate Using LaF3 as Low Refractive Index Material[J]. Infrared Technology , 2020, 42(8): 758-762.
    [4]GUO Sheng, XIN Sishu, GONG Xiaoxia, YUAN Jun, GUO Jie. Research on Surface Polishing and Corrosion of InSb Chip[J]. Infrared Technology , 2018, 40(2): 133-138.
    [5]YANG Yuping, ZI Zhenghua, ZHONG Hui, JIANG Xuejun, LI Daqing, LIU Jian, ZHAO Yuanrong. Impact of Fungus on Films on Ge, ZnS and ZnSe[J]. Infrared Technology , 2016, 38(12): 1078-1081.
    [6]ZI Zheng-hua, WANG Qiao-fang, LIU Jian, ZHAO Yuan-rong, LI Ru-jie. Corrosion Properties of LB6 Filter in Tropical Oceanic Climate Environment[J]. Infrared Technology , 2015, 37(11): 943-948.
    [7]WANG Qiao-Fang, ZI Zheng-Hua, LI Ru-jie, TAN Ji, YANG Jing, LE Li-zhu. Corrosion Properties of Germanium IR Window in Tropical Rainforest Environment[J]. Infrared Technology , 2014, (12): 964-966.
    [8]SUN Yan-chun, SUN Bu-sheng, MA Qi-shuang. Progress of Hidden Corrosion Detection in Aircraft[J]. Infrared Technology , 2007, 29(2): 121-123. DOI: 10.3969/j.issn.1001-8891.2007.02.016
    [9]SONG Chao, KONG Ling-de, YANG Yu. Study on the Photoluminescence Properties of Ge/Si multilayer Films Deposited by Magnetron Sputtering[J]. Infrared Technology , 2007, 29(2): 67-70. DOI: 10.3969/j.issn.1001-8891.2007.02.002
    [10]WU xiao-kun, YANG Yu, WU Xing-hui. Theoretical Study for Determining the Ge Crystal-Size of Gex/Si1-x Multilayer by Raman Scattering Spectra[J]. Infrared Technology , 2001, 23(1): 15-18. DOI: 10.3969/j.issn.1001-8891.2001.01.005

  • Cited by

    Periodical cited type(0)

    Other cited types(1)

Catalog

    Get Citation
    PDF
    XML
    Article views (355) PDF downloads (80) Cited by(1)
    Related

    Copyright © 《Infrared Technology》Editorial Office滇ICP备12000354号-3

    Supported by: Beijing Renhe Information Technology Co., Ltd.  Baidu Analytics

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return