ZHANG Hongfei, ZHU Xubo, LI Mo, YAO Guansheng, LYU Yanqiu. Research Progress of Mid-/Mid-Wavelength Dual-color Antimonide-based Infrared Detector[J]. Infrared Technology , 2022, 44(9): 904-911.
Citation: ZHANG Hongfei, ZHU Xubo, LI Mo, YAO Guansheng, LYU Yanqiu. Research Progress of Mid-/Mid-Wavelength Dual-color Antimonide-based Infrared Detector[J]. Infrared Technology , 2022, 44(9): 904-911.

Research Progress of Mid-/Mid-Wavelength Dual-color Antimonide-based Infrared Detector

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  • Received Date: October 22, 2021
  • Revised Date: November 22, 2021
  • To meet the demand for third-generation infrared detectors in multi-band detection, a mid-/mid-wavelength dual-color detector can obtain target information in two bands simultaneously and suppress complex background; hence, it can effectively eliminate the influence of interference sources and improve the accuracy of detection, which enhances target recognition under artificial and complex background interference. The design and preparation of mid-/mid-wavelength dual-color detectors have recently developed rapidly. The InSb infrared detector can realize the detection of the mid-/mid-wavelength via light splitting, and the antimonide type-II superlattice detector realizes multi-band detection through the energy band structure design. This paper describes the main technical method and current research progress of antimonide mid-/mid-wavelength dual-color infrared detectors. Compared with traditional InSb dual-color detectors, mid-/mid-wavelength dual-color superlattice infrared devices have distinct characteristics and advantages for infrared imaging detection. However, further research on detector structure design, antimonide superlattice material growth, and array device preparation is required to improve the detection performance and meet the demands of engineering applications.
  • [1]
    Rehm R, Walther M, Schmitz J, et al. Dual-colour thermal imaging with InAs/GaSb superlattices in mid-wavelength infrared spectral range[J]. Electronics Letters, 2006, 42(10): 577-578. DOI: 10.1049/el:20060878
    [2]
    李庆, 白杰, 吕衍秋, 等. 基于Pt/CdS与InSb光伏型紫外-红外焦平面探测器的双色探测机理[J]. 红外与毫米波学报, 2017, 36(4): 385-388. https://www.cnki.com.cn/Article/CJFDTOTAL-HWYH201704001.htm

    LI Qing, BAI Jie, LV Yanqiu, et al. Analysis of ultraviolet and infrared dual-color focal-plane array detector based on Pt/CdS and InSb junctions[J]. J. Infrared Millim. Waves, 2017, 36(4): 385-388. https://www.cnki.com.cn/Article/CJFDTOTAL-HWYH201704001.htm
    [3]
    胡伟达, 李庆, 陈效双, 等. 具有变革性特征的红外光电探测器[J]. 物理学报, 2019, 68(12): 120701. DOI: 10.7498/aps.68.20190281

    HU Weida, LI Qing, CHEN Xiaoshuang, et al. Recent progress on advanced infrared photodetectors[J]. Acta Phys. Sin. , 2019, 68(12): 120701. DOI: 10.7498/aps.68.20190281
    [4]
    Smith D L, Mailhiot C. Proposal for strained type II superlattice infrared detectors[J]. Journal of Applied Physics, 1987, 62(6): 2545. DOI: 10.1063/1.339468
    [5]
    孙姚耀, 韩玺, 吕粤希, 等. 基于InAs/GaSb二类超晶格的中/长波双色红外探测器[J]. 航空兵器, 2018, 4(2): 56-59. https://www.cnki.com.cn/Article/CJFDTOTAL-HKBQ201802010.htm

    SUN Yaoyao, HAN Xi, LYU Yuexi et al. Performance of dual-color mid-/long-wavelength infrared detectors based on Type-II InAs/GaSb superlattice[J]. Aero Weaponry, 2018, 4(2): 56-59. https://www.cnki.com.cn/Article/CJFDTOTAL-HKBQ201802010.htm
    [6]
    史衍丽. 锑基Ⅱ类超晶格红外探测器——第三代红外探测器的最佳选择[J]. 红外技术, 2011, 33(11): 621-624. DOI: 10.3969/j.issn.1001-8891.2011.11.001

    SHI Yanli. Type-II InAs/GaInSb superlattices infrared detectors-one of the best choices as the third generation infrared detectors[J]. Infrared Technology, 2011, 33(11): 621-624. DOI: 10.3969/j.issn.1001-8891.2011.11.001
    [7]
    Razeghi M, Haddadi A, Hoang A M, et al. Antimonide-based type II superlattices: a superior candidate for the third ceneration of infrared imaging systems[J]. Journal of Electronic Materials, 2014, 43(8): 2802-2807. DOI: 10.1007/s11664-014-3080-y
    [8]
    SUN Y, HAN X, HAO H, et al. 320×256 Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice[J]. Infrared Physics & Technology, 2017, 82: 140-143.
    [9]
    GUO C, JIANG Z, JIANG D, et al. Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices[J]. Optical and Quantum Electronics, 2019, 51(3): 73.
    [10]
    Haddadi A, Dehzangi A, Chevallier R, et al. Bias-selectable nBn dual-band long-/very long-wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices[J]. Scientific Reports, 2017, 7(1): 3379.
    [11]
    刘武, 陈建新. InAs/GaSb II类超晶格红外探测技术研究进展[J]. 激光与红外, 2016, 46(6): 659-664. https://www.cnki.com.cn/Article/CJFDTOTAL-JGHW201606003.htm

    LIU Wu, CHEN Jianxin. Research progress of InAs/GaSb type II superlattice infrared detection technique[J]. Laser & Infrared, 2016, 46(6): 659-664. https://www.cnki.com.cn/Article/CJFDTOTAL-JGHW201606003.htm
    [12]
    李俊斌, 李东升, 杨玉林, 等. 以色列SCD公司的III-V族红外探测器研究进展[J]. 红外技术, 2018, 40(10): 936-945. http://hwjs.nvir.cn/article/id/hwjs201810003

    LI Junbin, LI Dongsheng, YANG Yulin, et al. III-V semiconductor infrared detector research in SCD of Israel[J]. Infrared Technology, 2018, 40(10): 936-945. http://hwjs.nvir.cn/article/id/hwjs201810003
    [13]
    黄建亮, 张艳华, 曹玉莲, 等. 锑化物二类超晶格红外探测器[J]. 航空兵器, 2019, 26(2): 50-56. https://www.cnki.com.cn/Article/CJFDTOTAL-HKBQ201902008.htm

    HUANG Jianliang, ZHANG Yanhua, CAO Yulian, et al. Antimonide type II superlattice infrared detectors[J]. Aero Weaponry, 2019, 26(2): 50-56. https://www.cnki.com.cn/Article/CJFDTOTAL-HKBQ201902008.htm
    [14]
    GUO C, JIANG Z, JIANG D, et al. Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices[J]. Optical and Quantum Electronics, 2019, 51(3): 73.
    [15]
    PENG R, JIAO S, JIANG D, et al. Dark current mechanisms and spectral response of SiO2-passivated photodiodes based on InAs/GaSb superlattice[J]. Thin Solid Films, 2017, 629: 55-59.
    [16]
    Tribolet P, Destefanis G, Ballet P, et al. Advanced HgCdTe technologies and dual-band developments[C]//Infrared Technology and Applications XXXIV. International Society for Optics and Photonics, 2008, 6940: 69402P.
    [17]
    Eich D, Ames C, Breiter R, et al. MCT-based high performance bispectral detectors by AIM[J]. Journal of Electronic Materials, 2019, 48(10): 1-10.
    [18]
    Rogalski A. InAs/GaSb type-II superlattices versus HgCdTe ternary alloys: future prospect[C]//Electro-Optical and Infrared Systems: Technology and Applications XIV. International Society for Optics and Photonics, 2017, 10433: 104330U.
    [19]
    Hirsh I, Shkedy L, CHEN N, et al. Hybrid dual-color MWIR detector for airborne missile warning systems[C]//Proc. of SPIE, 2012, 8353: 83530H.
    [20]
    Greiner M., Davis M. Devitt J. et al. State of the art in large format IR FPA development at CMC electronics Cincinnati[C]//Proc. of SPIE, 2012, 5074: 60-71.
    [21]
    Höglund L, von Würtemberg R M, Gatty H, et al. Type-II InAs/GaSb superlattices for dual color infrared detection[C]//Quantum Sensing and Nano Electronics and Photonics XIV. International Society for Optics and Photonics, 2017, 10111: 1011116.
    [22]
    Rehm R, Walther M, Schmitz J, et al. Dual-colour thermal imaging with InAs/GaSb superlattices in mid-wavelength infrared spectral range[J]. Electronics Letters, 2006, 42(10): 577-578.
    [23]
    Rehm R, Walther M, Rutz F, et al. Dual-color InAs/GaSb superlattice focal-plane array technology[J]. Journal of Electronic Materials, 2011, 40(8): 1738-1743.
    [24]
    白治中, 徐志成, 周易, 等. 320×256元InAs/GaSb Ⅱ类超晶格中波红外双色焦平面探测器[J]. 红外与毫米波学报, 2015, 34(6): 716-720. https://www.cnki.com.cn/Article/CJFDTOTAL-HWYH201506015.htm

    BAI Zhizhong, XU Zhicheng, ZHOU Yi, et al. 320×256 dual -color mid-wavelength infrared InAs/GaSb superlattice focal plane arrays[J]. J. Infrared Millim. Waves, 2015, 34(6): 716-720. https://www.cnki.com.cn/Article/CJFDTOTAL-HWYH201506015.htm
    [25]
    白治中, 徐志成, 周易, 等. InAs/GaSb Ⅱ类超晶格中波红外双色640×512规模焦平面探测器[C]//2015年红外, 遥感技术与应用研讨会暨交叉学科论坛, 2015: 1-7.

    BAI Zhizhong, XU Zhicheng, ZHOU Yi, et al. 640×512 dual -color mid-wavelength infrared InAs/GaSb superlattice focal plane arrays[C]//Infrared, Remote Sensing Technology and Application Seminar and Interdisciplinary Forum, 2015: 1-7.
    [26]
    HUANG J, MA W, ZHANG Y, et al. Two-colorni bin type II superlattice infrared photodetector with external quantum efficiency larger than 100%[J]. IEEE Electron Device Letters, 2017, 38(9): 1266-1269.
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