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Volume 44 Issue 9
Sep.  2022
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ZHANG Hongfei, ZHU Xubo, LI Mo, YAO Guansheng, LYU Yanqiu. Research Progress of Mid-/Mid-Wavelength Dual-color Antimonide-based Infrared Detector[J]. Infrared Technology , 2022, 44(9): 904-911.
Citation: ZHANG Hongfei, ZHU Xubo, LI Mo, YAO Guansheng, LYU Yanqiu. Research Progress of Mid-/Mid-Wavelength Dual-color Antimonide-based Infrared Detector[J]. Infrared Technology , 2022, 44(9): 904-911.
shu

Research Progress of Mid-/Mid-Wavelength Dual-color Antimonide-based Infrared Detector

  • 1.

    Aviation Military Representative Office of Army Armament Department in Luoyang, Luoyang 471099, China

  • 2.

    China Airborne Missile Academy, Luoyang 471099, China

  • 3.

    Aviation Key Laboratory of Science and Technology on Infrared Detector, Luoyang 471099, China

  • 4.

    The Engineering Center for Antimonide-based Infrared Detector Research of Henan Province, Luoyang 471099, China

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  • Received Date: October 22, 2021
  • Revised Date: November 22, 2021
    Graphical Abstract
    • Abstract
  • To meet the demand for third-generation infrared detectors in multi-band detection, a mid-/mid-wavelength dual-color detector can obtain target information in two bands simultaneously and suppress complex background; hence, it can effectively eliminate the influence of interference sources and improve the accuracy of detection, which enhances target recognition under artificial and complex background interference. The design and preparation of mid-/mid-wavelength dual-color detectors have recently developed rapidly. The InSb infrared detector can realize the detection of the mid-/mid-wavelength via light splitting, and the antimonide type-II superlattice detector realizes multi-band detection through the energy band structure design. This paper describes the main technical method and current research progress of antimonide mid-/mid-wavelength dual-color infrared detectors. Compared with traditional InSb dual-color detectors, mid-/mid-wavelength dual-color superlattice infrared devices have distinct characteristics and advantages for infrared imaging detection. However, further research on detector structure design, antimonide superlattice material growth, and array device preparation is required to improve the detection performance and meet the demands of engineering applications.
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    • References (26)
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