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Volume 43 Issue 2
Mar.  2021
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SONG Linwei, KONG Jincheng, LI Dongsheng, LI Xiongjun, WU Jun, QIN Qiang, LI Lihua, ZHAO Peng. Au-Doped HgCdTe Infrared Material and Device Technology[J]. Infrared Technology , 2021, 43(2): 97-103.
Citation: SONG Linwei, KONG Jincheng, LI Dongsheng, LI Xiongjun, WU Jun, QIN Qiang, LI Lihua, ZHAO Peng. Au-Doped HgCdTe Infrared Material and Device Technology[J]. Infrared Technology , 2021, 43(2): 97-103.
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Au-Doped HgCdTe Infrared Material and Device Technology

  • Kunming Institute of Physics, Kunming 650223, China

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  • Received Date: August 11, 2020
  • Revised Date: September 04, 2020
    Graphical Abstract
    • Abstract
  • The minority carrier lifetime of p-type HgCdTe materials can be improved significantly by using Au atoms instead of Hg vacancies, which have been considered as deep-level energy recombination centers; consequently, the dark current of n-on-p HgCdTe devices reduced and performance improved. Further, Au doping is helpful for developing high-performance n-on-p LWIR/VLWIR and high operating temperature (HOT) MWIR HgCdTe infrared detectors with high resolution and high sensitivity. In this paper, Au-doped HgCdTe IR material and device technologies were reviewed. Critical processes and the effect of Au doping on the device properties were discussed as well.
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    • References (22)
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