Preparation of a CdS Ultraviolet Detector

HE Wenjin; XIN Sishu; ZHONG Ke; CHAI Yuanyuan; LI Bingzhe; YANG Wenyun; TAI Yunjian; YUAN Jun

Volume 43 Issue 8

Aug. 2021

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HE Wenjin, XIN Sishu, ZHONG Ke, CHAI Yuanyuan, LI Bingzhe, YANG Wenyun, TAI Yunjian, YUAN Jun. Preparation of a CdS Ultraviolet Detector[J]. Infrared Technology , 2021, 43(8): 773-776.

Citation:

HE Wenjin, XIN Sishu, ZHONG Ke, CHAI Yuanyuan, LI Bingzhe, YANG Wenyun, TAI Yunjian, YUAN Jun. Preparation of a CdS Ultraviolet Detector[J]. Infrared Technology , 2021, 43(8): 773-776.

HE Wenjin, XIN Sishu, ZHONG Ke, CHAI Yuanyuan, LI Bingzhe, YANG Wenyun, TAI Yunjian, YUAN Jun. Preparation of a CdS Ultraviolet Detector[J]. Infrared Technology , 2021, 43(8): 773-776.

Citation:

HE Wenjin, XIN Sishu, ZHONG Ke, CHAI Yuanyuan, LI Bingzhe, YANG Wenyun, TAI Yunjian, YUAN Jun. Preparation of a CdS Ultraviolet Detector[J]. Infrared Technology , 2021, 43(8): 773-776.

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Preparation of a CdS Ultraviolet Detector

Kunming Institute of Physics, Kunming 650223, China

Received Date: 2021-02-06
Rev Recd Date: 2021-08-06
Publish Date: 2021-08-20

Abstract

Abstract

A Pt/CdS Schottky UV detector was developed and studied based on the engineering application requirements of UV/IR dual-colored detectors. Key technologies such as the chip wafer surface treatment process for CdS, preparation process of the Pt electrode, and annealing of the UV detector chip were studied. The performance of the Pt/CdS Schottky UV detector was also analyzed. The results suggested a photo response rate of more than 0.2 A/W for wavelengths of 0.3–0.5 μm and an average transmittance of more than 80% for wavelengths of 3–5 μm, which meet the engineering requirements of UV/IR dual-color detectors.
- Pt/CdS,
- Schottky,
- UV detector,
- I-V characteristics

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References(9)

References

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