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Volume 44 Issue 1
Jan.  2022
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FU Xuecheng, WU Liying, QUAN Xueling, QU Minni, WANG Ying. Preparation of +4-Valent Vanadium Oxide Films via the Co-Sputtering of Mg and V2O5[J]. Infrared Technology , 2022, 44(1): 79-84.
Citation: FU Xuecheng, WU Liying, QUAN Xueling, QU Minni, WANG Ying. Preparation of +4-Valent Vanadium Oxide Films via the Co-Sputtering of Mg and V2O5[J]. Infrared Technology , 2022, 44(1): 79-84.
shu

Preparation of +4-Valent Vanadium Oxide Films via the Co-Sputtering of Mg and V2O5

  • Advanced Electronics Materials and Devices, Shanghai Jiao Tong University, Shanghai 200240, China

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  • Received Date: May 05, 2020
  • Revised Date: December 03, 2020
    Graphical Abstract
    • Abstract
  • Vanadium oxide films were deposited on a silicon substrate via co-sputtering a high-purity magnesium and vanadium pentoxide target under high vacuum at room temperature. Owing to the reducibility of the magnesium atom, the valency of vanadium was reduced from +5 to +4. When the atomic ratio of Mg to V was 1:2, X-ray diffraction (XRD) results showed that the main component in the film was MgV2O5. X-ray photoelectron spectroscopy (XPS) results showed that both V4+ and V2+ were present in the fabricated films. The crystallization of the MgV2O5 film was in adequate condition, as observed in the SEM profiles. The results of the temperature resistivity test showed that the film experienced a phase transition near room temperature. The hysteresis loop occurred at a temperature of approximately 0.3℃ with a temperature coefficient of resistance of −8.6%/K. The material constant of the negative temperature coefficient thermistor was approximately 6700. This discovery provides a novel method for the preparation of thermal film materials for application in uncooled focal plane detectors.
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    • References (23)
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