Research Progress on Infrared Detection Materials and Devices of HgCdTe Multilayer Heterojunction
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摘要: HgCdTe多层异质结技术是未来主流红外探测器发展的重要技术方向，在高工作温度、双/多色和雪崩光电管等高性能红外探测器中扮演着重要的角色。近年来基于多层异质结构的HgCdTe高工作温度红外探测器得到了快速发展，尤其是以势垒阻挡型和非平衡工作P+-π(ν)-N+结构为主的器件受到了广泛的研究。本文系统介绍了势垒阻挡型和非平衡工作P+-π(ν)-N+结构HgCdTe红外探测器的暗电流抑制机理，分析了制约两种器件结构发展的关键问题，并对国内外的研究进展进行了综述。对多层异质结构HgCdTe红外探测器的发展进行了总结与展望。Abstract: The HgCdTe multilayer heterojunction technology is an important direction for the development of mainstream infrared detectors in the future, playing an important role in high-performance infrared detectors, such as high operating temperature (HOT) detectors, dual/multicolor detectors, and avalanche photodiodes (APDs). Recently, HgCdTe HOT infrared detectors based on multilayer heterojunction technology have been developed, particularly devices based on the barrier and non-equilibrium operating P+-π(ν)-N+ structure have been widely studied. In this review, the dark current suppression mechanisms of P+-π(ν)-N+ structure HgCdTe infrared detectors with barrier and non-equilibrium operations were systematically introduced, the key problems that restrict the development of these two types of devices were analyzed, and the relevant research progress was reviewed. We summarized and assessed the prospects of the development of multilayer heterojunction HgCdTe infrared detectors.
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Key words:
- HgCdTe /
- multilayer heterojunction /
- barrier /
- non-equilibrium operating /
- focal plane arrays device
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图 1 单极势垒型红外探测器：(a)~(e)分别为nBn器件的能带结构[28]、Arrhenius曲线特性[28]、暗电流抑制特性[30]、体能带结构与表面能带结构对比[31]和表面漏电流通道的阻挡[31]；(f) nBn焦平面器件阵列结构[32]
Figure 1. Unipolar barrier infrared detector: (a)-(e) are the band structure[28], Arrhenius curve characteristics[28], dark current suppression characteristics[30], comparison of bulk band structure and surface band structure[31], and blocking of surface leakage current channel of nBn device[31], respectively; (f) nBn focal plane array structure[32]
图 2 HgCdTe势垒型探测器：(a)和(b)分别为nBn探测器的能带结构和暗电流的Arrhenius曲线[39-40]；(c)和(d)分别为互补势垒探测器NBνN的能带结构和暗电流的Arrhenius曲线[41]；(e)和(f)分别为p型掺杂势垒的能带结构和J-V特性曲线[48]
Figure 2. HgCdTe barrier detector: (a) and (b) are the band structure and Arrhenius curve of dark current of nBn detector, respectively[39-40]; (c) and (d) are the band structure and the Arrhenius curve of dark current of the complementary barrier detector NBνN, respectively[41]; (e) and (f) are the band structure and J-V characteristic curves of p-type doping barrier, respectively[48]
图 3 HgCdTe势垒型探测器降低ΔEv的方法：(a)和(b)分别为HgTe/CdTe能带对准示意图和超晶格势垒能带结构图[55]；(c)和(d)分别为势垒层两端的x组分梯度和n型/p型掺杂梯度[56]；(e)和(f)分别为势垒层两端δ掺杂调控结构和能带结构[57]
Figure 3. The solutions of reduce ΔEv of HgCdTe barrier detector: (a) and (b) are HgT/CdTe band alignment diagram and superlattice barrier band diagram, respectively[55]; (c) and (d) are Cd molar fraction gradient and acceptor/donor doping gradient at both ends of the barrier layer, respectively[56]; (e) and (f) are δ-doping regulatory structures and band structures at both ends of the barrier layer, respectively[57]
图 4 HgCdTe P+-π-N+单元红外探测器：(a)和(b)为非平衡工作器件结构及暗电流曲线[64]；(c)-(f)分别为零偏及反偏时的能带结构[71]、反偏时的频率响应特性[70]、多层异质单元器件结构和器件封装形式[52]
Figure 4. HgCdTe P+-π-N+ prototype infrared detector: (a) and (b) are the structure and dark current curve of non-equilibrium operating device; (c)-(f) are the band structures with and without reverse bias[70], the frequency response characteristics with reverse bias[70], the structure and packaging form of multilayer heterojunction prototype devices[52], respectively
图 5 P/p(π)/N结构焦平面红外探测器：(a)和(b)分别为P+-p-N+探测器的像元结构[17]和掺杂以及组分变化曲线[82]；(c)-(f)分别为P+-p-N+焦平面探测器的焦平面阵列结构[17]、NETD曲线[85]、210 K时的成像效果图[85]和探测器组件产品图[91]
Figure 5. Focal plane array infrared detectors with P/p(π)/N structure: (a) and (b) are the pixel structure[17], doping and composition change curves of P+-p-N+ detectors[82], respectively; (c)-(f) are FPAs structure[17], calculated and measured NETD[85], hawk image at 210 K[85] and component product of P+-p-N+ FPAs detector[91], respectively
图 6 P-ν-N结构焦平面红外探测器：(a)和(b)分别为吸收层Auger抑制高于“07规则”和完全耗尽时的能带结构图[94]；(c) P-ν-N焦平面结构及其特征[63]；(d) ν吸收区的暗电流密度随着多子（电子）浓度降低而降低并直达BLIP[63]；(e) ν吸收层掺杂水平对全耗尽时所需反向偏压的影响[13]；(f)不同波长时全耗尽HgCdTe P-ν-N焦平面探测器工作温度的提升[97]
Figure 6. Focal plane infrared detector of P-ν-N structure: (a) and (b) are the band structures of absorption layer with Auger suppression higher than "07 rule" and complete depletion, respectively[94]; (c) P-ν-N focal plane array structure and its characteristics[63]; (d) The dark current density in the absorption region decreases with the decrease of the majority carrier (electron) concentration and reaches the background limit infrared performance[63]; (e) The effect of doping level of the absorption layer on required reverse bias voltage when full depletion[13]; (f) Increases of operating temperature of full depletion HgCdTe P-ν-N focal plane detector with different wavelength[97]
图 7 势垒阻挡型和非平衡工作HgCdTe红外探测器的进展
Figure 7. Progresses in barrier detector and non-equilibrium operating HgCdTe infrared detectors
表 1 势垒阻挡型HgCdTe红外探测器的结构及性能对比
Table 1. Comparisons of structure and performance of barrier blocking HgCdTe infrared detectors
Device structure λcut-off/
μmT/K Dark current
Vbias=−0.2 V
(A/cm2）Other
performanceResearch institution Year Ref. nBnn 5.7 77 −0.54@180 K and −0.8 V Qη=66%
Vturn on=−0.5~−1.0 VUMich, USA 2011 [39] nBnnN 5.2 77 3.74×10-6@−0.5 V Vturn on=−0.2 V 2012 [41] $ {\mathrm{p}}^{+}{\mathrm{B}}_{\mathrm{p}}{\mathrm{n}\mathrm{N}}^{+} $ 3.6 230 (2~3)×10-4 Ri=2 A/W MUT/Vigo, Poland 2014 [47] $ {\mathrm{p}}^{+}{\mathrm{B}}_{\mathrm{p}}{\mathrm{p}\mathrm{N}}^{+} $ $ {\mathrm{n}\mathrm{B}}_{\mathrm{p}}\mathrm{p}{\mathrm{N}}^{+} $ 3.6 230 (2~3)×10-2 D*=2.0×1010Jones MUT/Vigo, Poland 2015 [50] $ {\mathrm{n}\mathrm{B}}_{\mathrm{p}}\mathrm{n}{\mathrm{N}}^{+} $ (7~60)×10-2 D*=1.0×1010 Jones $ {{\mathrm{n}}^{+}\mathrm{B}}_{\mathrm{p}}\mathrm{p}{\mathrm{N}}^{+} $ (1~3)×10-1 D*=8.0×109 Jones $ {{\mathrm{n}}^{+}\mathrm{B}}_{\mathrm{p}}\mathrm{n}{\mathrm{N}}^{+} $ > 1.0 D*=1.0×109 Jones $ {\mathrm{P}\mathrm{B}}_{\mathrm{p}}\mathrm{\pi }{\mathrm{n}}^{+} $ 9.0 77 (3~4)×10-4 - MUDT, China 2016 [58] $ {\mathrm{p}}^{+}{\mathrm{B}}_{\mathrm{p}}{\mathrm{n}\mathrm{N}}^{+} $ 6.0 230 9×10-2 - MUT, Poland 2016 [26] $ {\mathrm{p}}^{+}{\mathrm{B}}_{\mathrm{p}}{\mathrm{p}\mathrm{N}}^{+} $ 0.1 - $ {\mathrm{n}}^{+}{\mathrm{p}}^{+}{\mathrm{B}}_{\mathrm{p}}\pi {\mathrm{N}}^{+} $ 9.0 230 (8~9)@77 K - MUT/Vigo, Poland 2016 [59] nBnn 7.5 180 ~3.0×10-4 D*=1.64×109 Jones SITP, CAS, China/MUT, Poland 2020 [60] 
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表 2 HgCdTe多层异质结快速响应单元红外探测器性能对比
Table 2. Comparisons of performances of HgCdTe multilayer heterojunction fast response infrared detectors
Device structure λcut-off
/μmT/K Dark current/(A/cm2) Other performances Year Ref. P-π-N 7.5 230 0.4-2.0@−0.8 V Ri=6 A/W 2013 [72] n+-p+-P+-π-N+ 10.6 230 0.052@−0.2 V - 2016 [77] n+-P+-π-N+ 10.6 230 0.1-0.2@−0.7 V - 2017 [79] 3-20@unbiased - n+-P+-p-N+ 10.6 230 0.1-0.2@−0.7 V - 2017 [70] 4-8@unbiased - < 1@unbiased, optimal D*≈109 Jones n+-P+-p-N+ 10.6 300 ≤1@unbiased, RS+=0 Ω D*≈109 Jones 2017 [80] ~2.3@unbiased, RS+=5-10 Ω - N+-p-P+ 11.6 200 0.1-0.2@unbiased, NA/ni=10, tabs=1 μm Ri=~2 A/W 2018 [74]
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表 3 HgCdTe多层异质结焦平面红外探测器性能对比
Table 3. Comparison of performances of HgCdTe multilayer heterojunction FPAs infrared detectors
Device structure FPA
formatλcut-off/
μmNETD/mK Other performance Research institution Year Ref. P+-P-π-N-N+ Variable mesa 320×256
(30 μm)4@150 K 12@180 K - BAE/
QinetiQ, UK2003 [84] Eagle 640×512
(24 μm)9.6@80 K 20@80 K Operability
≥99%Selex, UK 2007 [82] P-p-N
(Hawk)640×512
(16 μm)8.0~9.4 28@80 K Operability =99.6% 2009 [88] P-p-N
(Hawk)640×512
(16 μm)5.5@80 K ~16@160 K
~32@185 K- 2011 [85] P-p-N
(Test array)- - ~18@180 K - 2012 [90] P+-p-N+ (SuperHawk) 1280×1024
(8 μm)- ~24@140 K
~28@ 150 K
~52@ 160 KOperability
≥99%2016 [92] P-ν-N 128×128
1280×480
640×5125.9@250 K
10.2@78 K- MWIR HOT: 250 K
LWIR HOT:
160 KTIS, USA 2018
2020[97]
[94]
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[1] 宋林伟, 孔金丞, 李东升, 等. 金掺杂碲镉汞红外探测材料及器件技术[J]. 红外技术, 2021, 43(2): 97-103. http://hwjs.nvir.cn/article/id/587d68b6-af54-476a-b0b8-5a5e4ef674fdSONG Linwei, KONG Jincheng, LI Dongsheng, et al. Au-doped HgCdTe infrared material and device technology[J]. Infrared Technology, 2021, 43(2): 97-103. http://hwjs.nvir.cn/article/id/587d68b6-af54-476a-b0b8-5a5e4ef674fd [2] 覃钢, 吉凤强, 夏丽昆, 等. 碲镉汞高工作温度红外探测器[J]. 红外与激光工程, 2021, 50(4): 20200328. https://www.cnki.com.cn/Article/CJFDTOTAL-HWYJ202104003.htmQIN Gang, JI Fengqiang, XIA Likun, et al. HgCdTe high operation temperature infrared detectors[J]. Infrared and Laser Engineering, 2021, 50(4): 20200328. https://www.cnki.com.cn/Article/CJFDTOTAL-HWYJ202104003.htm [3] 覃钢, 夏菲, 周笑峰, 等. 基于nBn势垒阻挡结构的碲镉汞高温器件[J]. 红外技术, 2018, 40(9): 853-862. http://hwjs.nvir.cn/article/id/hwjs201809005QIN Gang, XIA Fei, ZHOU Xiaofeng, et al. HgCdTe HOT infrared devices based on nBn barrier impeded structure[J]. Infrared Technology, 2018, 40(9): 853-862. http://hwjs.nvir.cn/article/id/hwjs201809005 [4] Akhavan N D, Jolley G, Umana-Membreno G A, et al. Performance modeling of bandgap engineered HgCdTe-based nBn infrared detectors[J]. IEEE Transactions on Electron Devices, 2014, 61(11): 3691-3698. doi: 10.1109/TED.2014.2359212 [5] Klipstein P. "XBn" barrier photodetectors for high sensitivity and high operating temperature infrared sensors[C]//Proc. of SPIE, 2008, 6940: 69402U. [6] Kopytko M, Keblowski A, Gawron W, et al. MOCVD grown HgCdTe barrier detectors for MWIR high-operating temperature operation[J]. Optical Engineering, 2015, 54(10): 105105. doi: 10.1117/1.OE.54.10.105105 [7] Klipstein P, Klin O, Grossman S, et al. XBn barrier detectors for high operating temperatures[C]// Proc. of SPIE, 2010, 7608: 76081V. [8] Martyniuk P, Rogalski A. Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector[J]. Bulletin of the Polish Academy of Sciences: Technical Sciences, 2013, 61(1): 211-220. doi: 10.2478/bpasts-2013-0020 [9] YE Z H, CHEN Y Y, ZHANG P, et al. Modeling of LWIR nBn HgCdTe photodetector[C]// Proc. of SPIE, 2014, 9070: 90701L. [10] 刘恩科, 朱秉升, 罗晋生. 半导体物理学[M]. 7版, 北京: 电子工业出版社, 2008.LIU Enke, ZHU Bingsheng, LUO Jinsheng. The Physics of Semiconductors[M]. 7th Edition, Beijing: Publishing House of Electronics Industry, 2009. [11] 王忆锋, 唐利斌. 碲镉汞近年来的研究进展[J]. 红外技术, 2009, 31(8): 435-442. doi: 10.3969/j.issn.1001-8891.2009.08.001WANG Yifeng, TANG Libin. Developments of mercury cadmium telluride in recent years[J]. Infrared Technology, 2009, 31(8): 435-442. doi: 10.3969/j.issn.1001-8891.2009.08.001 [12] 丁瑞军, 杨建荣, 何力, 等. 碲镉汞红外焦平面器件技术进展[J]. 红外与激光工程, 2020, 49(1): 93-99. https://www.cnki.com.cn/Article/CJFDTOTAL-HWYJ202001010.htmDING Ruijun, YANG Jianrong, HE Li, et al. Development of technologies for HgCdTe IRFPA[J]. Infrared and Laser Engineering, 2020, 49(1): 93-99. https://www.cnki.com.cn/Article/CJFDTOTAL-HWYJ202001010.htm [13] Rogalski A, Kopytko M, Martyniuk P, et al. Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors[J]. Bulletin of the Polish Academy of Sciences Technical Sciences, 2020, 68(4): 845-855. [14] 杨建荣. 碲镉汞材料物理与技术[M]. 北京: 国防工业出版社, 2012.YANG Jianrong. Physics and Technology of HgCdTe Materials[M]. Beijing: National Defense Industry Press, 2012. [15] Lutz H, Breiter R, Figgemeier H, et al. Improved high operating temperature MCT MWIR modules[C]// Proc. of SPIE, 2014, 9070: 90701D. [16] 周连军, 韩福忠, 白丕绩, 等. 高温碲镉汞中波红外探测器的国内外进展[J]. 红外技术, 2017, 39(2): 116-124. http://hwjs.nvir.cn/article/id/hwjs201702002ZHOU Lianjun, HAN Fuzhong, BAI Piji, et al. Review of HOT MW infrared detector using MCT technology[J]. Infrared Technology, 2017, 39(2): 116-124. http://hwjs.nvir.cn/article/id/hwjs201702002 [17] Martyniuk P, Rogalski A. HOT infrared photodetectors[J]. Opto-Electronics Review, 2013, 21(2): 1955. [18] Maimon S, Wicks G W. nBn detector, an infrared detector with reduced dark current and higher operating temperature[J]. Applied Physics Letters, 2006, 89(15): 151109. doi: 10.1063/1.2360235 [19] Klipstein P, Aronov D, Berkowicz E, et al. Reducing the cooling requirements of mid-wave IR detector arrays[J]. SPIE Newsroom, 2011, Doi: 10.1117/2.1201111.003919. [20] LEI L, LI L, YEH, et al. Long wavelength interband cascade infrared photodetectors operating at high temperatures[J]. Journal of Applied Physics, 2016, 120(19): 193102. doi: 10.1063/1.4967915 [21] Rabiee Golgir H, Ghandiparsi S, Devine E P, et al. Ultra-thin super absorbing photon trapping materials for high-performance infrared detection[C]// Proc. of SPIE, 2019, 11002: 110020T. [22] Ashley T, Elliott C T, White A M. Non-equilibrium devices for infrared detection[C]// Proc. of SPIE, 1985, 572: 123. [23] Kopytko M, Kębłowski A, Gawron W, et al. High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD[J]. Opto-Electronics Review, 2013, 21(4): 151109. [24] White A. Infrared Detectors [P]. U. S. : Patent 4, 679, 063, [1983-09-22]. [25] Klipstein P. Depletion-less Photodiode with Suppressed Dark Current and Method for Producing the Same [P]. U. S. : Patent 7, 795, 640 B2, [2004-06-28]. [26] Kopytko M, Rogalski A. HgCdTe barrier infrared detectors[J]. Progress in Quantum Electronics, 2016, 47(12): 1-18. [27] Martyniuk P, Kopytko M, Rogalski A. Barrier infrared detectors[J]. Opto-Electronics Review, 2014, 22(2): 1624. [28] Rogalski A, Martyniuk P. Mid-wavelength Infrared nBn for HOT Detectors[J]. Journal of Electronic Materials, 2014, 43(8): 2963-2969. [29] Pedrazzani J R, Maimon S, Wicks G W. Use of nBn structures to suppress surface leakage currents in unpassivated InAs infrared photodetectors[J]. Applied Physics Letters, 2008, 44(25): 1487. [30] Savich G R, Pedrazzani J R, Sidor D E, et al. Benefits and limitations of unipolar barriers in infrared photodetectors[J]. Infrared Physics & Technology, 2013, 59: 152-155. [31] Sidor D E, Savich G R, Wicks G W. Surface leakage mechanisms in III-V infrared barrier detectors[J]. Journal of Electronic Materials, 2016, 45(9): 4663-4667. [32] Rogalski A. Next decade in infrared detectors[C]// Proc. of SPIE, 2017, 10433: 104330L. [33] Savich G R, Pedrazzani J R, Maimon S, et al. Use of epitaxial unipolar barriers to block surface leakage currents in photodetectors[J]. Physica Status Solidi C, 2010, 7(10): 2540-2543. [34] Kopytko M, Gomółka E, Michalczewski K, et al. Investigation of surface leakage current in MWIR HgCdTe and InAsSb barrier detectors[J]. Semiconductor Science and Technology, 2018, 33(12): 125010. [35] DU X, Savich G R, Marozas B T, et al. Suppression of lateral diffusion and surface leakage currents in nBn photodetectors using an inverted design[J]. Journal of Electronic Materials, 2018, 47(2): 1038-1044. [36] Martyniuk P, Antoszewski J, Martyniuk M, et al. New concepts in infrared photodetector designs[J]. Applied Physics Reviews, 2014, 1(4): 41102. [37] Kopytko M, Jóźwikowski K. Numerical analysis of current–voltage characteristics of LWIR nBn and p-on-n HgCdTe photodetectors[J]. Journal of Electronic Materials, 2013, 42(11): 3211-3216. [38] 田震, 肖昕, 宋淑芳, 等. 低暗电流高温工作碲镉汞红外探测器制备技术[J]. 激光与红外, 2019, 49(7): 861-865. https://www.cnki.com.cn/Article/CJFDTOTAL-JGHW201907014.htmTIAN Zhen, XIAO Xin, SONG Shufang, et al. Low-dark current HOT infrared focal plane arrays using MCT technology[J]. Laser & Infrared, 2019, 49(7): 861-865. https://www.cnki.com.cn/Article/CJFDTOTAL-JGHW201907014.htm [39] Itsuno A M, Phillips J D, Velicu S. Mid-wave infrared HgCdTe nBn photodetector[J]. Applied Physics Letters, 2012, 100(16): 161102. [40] Itsuno A M, Phillips J D, Velicu S. Design and modeling of HgCdTe nBn detectors[J]. Journal of Electronic Materials, 2011, 40(8): 1624-1629. [41] Itsuno A M, Phillips J D, Velicu S. Design of an auger-suppressed unipolar HgCdTe NBνN photodetector[J]. Journal of Electronic Materials, 2012, 41(10): 2886-2892. [42] Itsuno A M, Phillips J D, Gilmore A S, et al. Calculated performance of an auger-suppressed unipolar HgCdTe photodetector for high temperature operation[C]// Proc. of SPIE, 2011, 8155: 81550J. [43] Ting D Z-Y, Hill C J, Soibel A, et al. A high-performance long wavelength superlattice complementary barrier infrared detector[J]. Applied Physics Letters, 2009, 95(2): 23508. [44] Martyniuk P, Rogalski A. Modelling of MWIR HgCdTe complementary barrier HOT detector[J]. Solid-State Electronics, 2013, 80: 96-104. [45] Martyniuk P, Gawron W, Rogalski A. Theoretical modeling of HOT HgCdTe barrier detectors for the mid-wave infrared range[J]. Journal of Electronic Materials, 2013, 42(11): 3309-3319. [46] Kopytko M, Jozwikowski K. Generation-recombination effect in MWIR HgCdTe barrier detectors for high-temperature operation[J]. IEEE Transactions on Electron Devices, 2015, 62(7): 2278-2284. [47] Kopytko M, Keblowski A, Gawron W, et al. MOCVD grown HgCdTe barrier structures for HOT conditions[J]. IEEE Transactions on Electron Devices, 2014, 61(11): 3803-3807. [48] Kopytko M. Design and modelling of high-operating temperature MWIR HgCdTe nBn detector with n-and p-type barriers[J]. Infrared Physics & Technology, 2014, 64(15): 47-55. [49] Klem J F, Kim J K, Cich M J, et al. Comparison of nBn and nBp mid-wave barrier infrared photodetectors[C]// Proc. of SPIE, 2010, 7608: 76081P. [50] Kopytko M, Kębłowski A, Gawron W, et al. Different cap-barrier design for MOCVD grown HOT HgCdTe barrier detectors[J]. Opto-Electronics Review, 2015, 23(2): 143-148. [51] Kopytko M, Kębłowski A, Gawron W, et al. MOCVD grown HgCdTe p+BnN+ barrier detector for MWIR HOT operation[C]// Proc. of SPIE, 2015, 9451: 945117. [52] Gawron W, Sobieski J, Manyk T, et al. MOCVD grown HgCdTe heterostructures for medium wave infrared detectors[J]. Coatings, 2021, 11(5): 611. [53] Uzgur F, Kocaman S. Barrier engineering for HgCdTe unipolar detectors on alternative substrates[J]. Infrared Physics & Technology, 2019, 97(3): 123-128. [54] Kopytko M, Jóźwikowski K, Rogalski A. Fundamental limits of MWIR HgCdTe barrier detectors operating under non-equilibrium mode[J]. Solid-State Electronics, 2014, 100(1): 20-26. [55] Kopytko M, Wróbel J, Jóźwikowski K, et al. Engineering the bandgap of unipolar HgCdTe-based nBn infrared photodetectors[J]. Journal of Electronic Materials, 2015, 44(1): 158-166. [56] Akhavan N D, Umana-Membreno G A, Jolley G, et al. A method of removing the valence band discontinuity in HgCdTe-based nBn detectors[J]. Applied Physics Letters, 2014, 105(12): 121110. [57] Akhavan N D, Umana-Membreno G A, Gu R, et al. Delta doping in HgCdTe-Based unipolar barrier photodetectors[J]. IEEE Transactions on Electron Devices, 2018, 65(10): 4340-4345. [58] QIU W C, JIANG T, CHENG X A. A bandgap-engineered HgCdTe PBπn long-wavelength infrared detector[J]. Journal of Applied Physics, 2015, 118(12): 124504. [59] Kopytko M, Kębłowski A, Gawron W, et al. LWIR HgCdTe barrier photodiode with auger-suppression[J]. Semiconductor Science and Technology, 2016, 31(3): 35025. [60] HE J, WANG P, LI Q, et al. Enhanced performance of HgCdTe long-wavelength infrared photodetectors with nBn design[J]. IEEE Transactions on Electron Devices, 2020, 67(5): 2001-2007. [61] 安东尼⋅罗格尔斯基. 红外探测器[M]. 2版, 北京: 机械工业出版社, 2014.Rogalski Antoni. Infrared Detectors [M]. Second Edition, Beijing: China Machine Press, 2014. [62] Rogalski A, Martyniuk P, Kopytko M, et al. Trends in performance limits of the HOT infrared photodetectors[J]. Applied Sciences, 2021, 11(2): 501. [63] Lee D, Carmody M, Piquette E, et al. High-operating temperature HgCdTe: a vision for the near future[J]. Journal of Electronic Materials, 2016, 45(9): 4587-4595. [64] Capper P, Garland J. Mercury Cadmium Telluride: Growth, Properties, and Applications[M]. Oxford: Wiley-Blackwell, 2011: 474-476. [65] Piotrowski A, Kłos K, Gawron W, et al. Uncooled or minimally cooled 10 μm photodetectors with subnanosecond response time[C]// Proc. of SPIE, 2007, 6542: 65421B. [66] Madejczyk P, Gawron W, Kębłowski A, et al. Response time study in unbiased long wavelength HgCdTe detectors[J]. Optical Engineering, 2017, 56(8): 087103.1-087103.8. [67] Pawluczyk J, Piotrowski J, Pusz W, et al. Complex behavior of time response of HgCdTe HOT photodetectors[J]. Journal of Electronic Materials, 2015, 44(9): 3163-3173. [68] Grodecki K, Martyniuk P, Kopytko M, et al. Fast response hot (1 1 1) HGCDTE MWIR Detectors[J]. Metrology and Measurement Systems, 2017, 24(3): 509-514. [69] Piotrowski A, Madejczyk P, Gawron W, et al. Progress in MOCVD growth of HgCdTe heterostructures for uncooled infrared photodetectors[J]. Infrared Physics & Technology, 2007, 49(3): 173-182. [70] Kopytko M, Kębłowski A, Madejczyk P, et al. Optimization of a HOT LWIR HgCdTe photodiode for fast response and high detectivity in zero-bias operation mode[J]. Journal of Electronic Materials, 2017, 46(10): 6045-6055. [71] Madejczyk P, Gawron W, Martyniuk P, et al. Engineering steps for optimizing high temperature LWIR HgCdTe photodiodes[J]. Infrared Physics & Technology, 2017, 81(10): 276-281. [72] Kopytko M, Jóźwikowski K, Madejczyk P, et al. Analysis of the response time in high-temperature LWIR HgCdTe photodiodes operating in non-equilibrium mode[J]. Infrared Physics & Technology, 2013, 61: 162-166. [73] Piotrowski J F, Rogalski A. High-Operating-Temperature Infrared Photodetectors[M]. Bellingham, Washington: SPIE Press, 2007. [74] Kopytko M, Martyniuk P, Madejczyk P, et al. High frequency response of LWIR HgCdTe photodiodes operated under zero-bias mode[J]. Optical and Quantum Electronics, 2018, 50(2): 451. doi: 10.1007/s11082-018-1336-0 [75] Madejczyk P, Gawron W, Kębłowski A, et al. Higher operating temperature IR detectors of the MOCVD grown HgCdTe heterostructures[J]. Journal of Electronic Materials, 2020, 49(11): 6908-6917. https://www.sciencedirect.com/science/article/pii/S0079672716000112 [76] Martyniuk P, Gawron W, Stępień D, et al. Status of long-wave Auger suppressed HgCdTe detectors operating>200 K[J]. Opto-Electronics Review, 2015, 23(4): 151109. http://yadda.icm.edu.pl/yadda/element/bwmeta1.element.baztech-b54920e1-6686-4d03-a0e5-b252bcf63fc2 [77] Martyniuk P, Kopytko M, Keblowski A, et al. Interface influence on the long-wave Auger suppressed multilayer N+π P+p+n+ HgCdTe HOT detector performance[J]. IEEE Sensors Journal, 2017, 17(3): 674-678. [78] Madejczyk P, Gawron W, Martyniuk P, et al. MOCVD grown HgCdTe device structure for ambient temperature LWIR detectors[J]. Semiconductor Science and Technology, 2013, 28(10): 105017. doi: 10.2478/s11772-014-0186-y [79] Madejczyk P, Gawron W, Kębłowski A, et al. Response time improvement of LWIR HOT MCT detectors[C]// Proc. of SPIE, 2017, 10177: 1017719. [80] Martyniuk P, Kopytko M, Madejczyk P, et al. Theoretical simulation of a room temperature HgCdTe long-wave detector for fast response−operating under zero bias conditions[J]. Metrology and Measurement Systems, 2017, 24(4): 729-738. [81] Kopytko M, Sobieski J, Gawron W, et al. Minority carrier lifetime in HgCdTe (1 0 0) epilayers and their potential application to background radiation limited MWIR photodiodes[J]. Semiconductor Science and Technology, 2021, 36(5): 55003. [82] Hipwood L G, Jones C L, Walker D, et al. Affordable high-performance LW IRFPAs made from HgCdTe grown by MOVPE[C]// Proc. of SPIE, 2007, 6542: 65420I. [83] Jones C L, Hipwood L G, Shaw C J, et al. High-performance MW and LW IRFPAs made from HgCdTe grown by MOVPE[C]// Proc. of SPIE, 2006, 6206: 620610. [84] Hipwood L G, Gordon N T, Jones C L, et al. 4 μm cut-off MOVPE Hg1-x CdxTe hybrid arrays with near BLIP performance at 180 K[C]// Proc. of SPIE, 2003, 5074: 185. [85] Knowles P, Hipwood L, Pillans L, et al. MCT FPAs at high operating temperatures[C]//Proc. of SPIE, 2011, 8185: 818505. [86] Gordon N T, Lees D J, Bowen G, et al. HgCdTe detectors operating above 200 K[J]. Journal of Electronic Materials, 2006, 35(6): 1140-1144. doi: 10.1007/s11664-006-0233-7 [87] Bowen G J, Blenkinsop I D, Catchpole R, et al. HOTEYE: a novel thermal camera using higher operating temperature infrared detectors[C]// Proc. of SPIE, 2005, 5783: 392. [88] Hipwood L G, Jones C L, Price J, et al. LW Hawk: a 16 μm pitch full-TV LW IRFPA made from HgCdTe grown by MOVPE[C]// Proc. of SPIE, 2009, 7298: 729820. [89] Abbott P, Thorne P M, Arthurs C P. Latest detector developments with HgCdTe grown by MOVPE on GaAs substrates[C]// Proc. of SPIE, 2011, 8012: 801236. [90] Knowles P, Hipwood L, Shorrocks N, et al. Mercury cadmium telluride detectors achieve high operating temperatures[J]. SPIE Newsroom, 2012. Doi: 10.1117/2.1201211.004535. [91] McEwen R K, Jeckells D, Bains S, et al. Developments in reduced pixel geometries with MOVPE grown MCT arrays[C]// Proc. of SPIE, 2015, 9451: 94512D. [92] Jeckells D, McEwen R K, Bains S, et al. Further developments of 8 μm pitch MCT pixels at Finmeccanica (formerly Selex ES)[C]// Proc. of SPIE, 2016, 9819: 98191X. [93] Kinch M A, Wan C-F, Schaake H, et al. Universal 1/f noise model for reverse biased diodes[J]. Applied Physics Letters, 2009, 94(19): 193508. [94] Lee D L, Dreiske P, Ellsworth J, et al. Law 19: the ultimate photodiode performance metric[C]// Proc. of SPIE, 2020, 11407: 114070X. [95] 孔金丞, 李艳辉, 杨春章, 等. 昆明物理研究所分子束外延碲镉汞薄膜技术进展[J]. 人工晶体学报, 2020, 49(12): 2221-2229. https://www.cnki.com.cn/Article/CJFDTOTAL-RGJT202012002.htmKONG Jincheng, LI Yanhui, YANG Chunzhang, et al. Progress in MBE Growth of HgCdTe at Kunming Institute of Physics[J]. Journal of Synthetic Crystals, 2020, 49(12): 2221-2229. https://www.cnki.com.cn/Article/CJFDTOTAL-RGJT202012002.htm [96] Knowles P, Hipwood L, Shorrocks N, et al. Status of IR detectors for high operating temperature produced by MOVPE growth of MCT on GaAs substrates[C]// Proc. of SPIE, 2012, 8541: 854108. [97] Jerram P, Beletic J. Teledyne's high performance infrared detectors for Space missions[C]// Proc. of SPIE, 2018, 11180: 111803D-2. -
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