三代微光像增强器微通道板防离子反馈膜的电子透射特性

Electron Transmittance of Ion Barrier Film on MCP of the 3rd Generation Low Light Level Image Intensifier

  • 摘要: 三代微光像增强器的微通道板防离子反馈膜可保护光阴极免受反馈离子的轰击,延长器件寿命,但也会对电子图像质量产生影响。基于蒙特卡罗分析方法,本文研究了三代微光像增强器的微通道板防离子反馈膜的电子透射特性,并采用半膜法实验对微通道板防离子反馈膜电子透射特性进行了测量比对。研究结果表明:对于膜厚为5 nm的防离子反馈膜,当像增强器前近贴电压为400 V时,其电子透过率约为60%,当前近贴电压为600 V时,其电子透过率约为80%;同时用半膜法测试得到的防离子反馈膜电子透过率分别为56.6%、85.0%,实验与分析结果间的最大相对偏差小于6.3%,说明半膜法可获取三代微光像增强器微通道板防离子反馈膜电子透过率。本文研究结果对提升三代微光像增强器微通道板防离子反馈膜的工艺质量具有积极的促进意义。

     

    Abstract: The anti-ion feedback film of the microchannel plate in a third-generation micro-optical image intensifier protects the photocathode from bombardment by feedback ions and prolongs the device lifetime; however, it also affects the quality of the electronic image. Based on the Monte Carlo analysis method, the electron transmission characteristics of the anti-ion feedback film in the microchannel plate of a third-generation micro-optical image intensifier were studied. In addition, the electron transmission characteristics of the anti-ion feedback film were measured and compared using a half-film experiment. The results showed that for an anti-ion feedback film with a thickness of 5 nm, the electron transmittance was approximately 60% when the proximity voltage in front of the image intensifier was 400 V, and the electron transmittance was approximately 80% when the current proximity voltage was 600 V. The electron transmittances of the anti-ion feedback films were 56.6% and 85.0%, respectively, and the maximum relative deviation between the experimental and analytical results was less than 6.3%, indicating that the electron transmittance of the anti-ion feedback film of the third-generation micro-optical image intensifier microchannel plate could be obtained using the half-film method. The results of this study are significant for improving the fabrication quality of anti-ion feedback films in third-generation micro-optical image-intensifier microchannel plates.

     

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