Preparation of a CdS Ultraviolet Detector
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摘要: 针对紫外探测器在紫外-红外双色探测器中的工程化应用需求，开展了Pt/CdS肖特基紫外探测器研究，通过对CdS晶片表面处理工艺、Pt电极制备及紫外芯片退火等关键技术进行优化研究，并对Pt/CdS肖特基紫外探测器性能进行测试分析。测试结果表明: Pt/CdS肖特基紫外探测器在0.3~0.5 μm下响应率大于0.2 A/W，对3~5 μm红外波长的平均透过率大于80%，很好地满足了紫外-红外双色探测器中的工程化应用要求。Abstract: A Pt/CdS Schottky UV detector was developed and studied based on the engineering application requirements of UV/IR dual-colored detectors. Key technologies such as the chip wafer surface treatment process for CdS, preparation process of the Pt electrode, and annealing of the UV detector chip were studied. The performance of the Pt/CdS Schottky UV detector was also analyzed. The results suggested a photo response rate of more than 0.2 A/W for wavelengths of 0.3–0.5 μm and an average transmittance of more than 80% for wavelengths of 3–5 μm, which meet the engineering requirements of UV/IR dual-color detectors.
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Keywords:
- Pt/CdS /
- Schottky /
- UV detector /
- I-V characteristics
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图 3 紫外探测器芯片表面处理前后的欧姆接触对比图
Figure 3. Ohmic contact comparison before and after surface treatment
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图 4 优化Pt电极后肖特基结的I-V曲线图
Figure 4. I-V curve of Schottky junction after optimizing Pt electrode
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图 5 退火前后肖特基结的I-V曲线对比图
Figure 5. I-V curves of Schottky junction before and after annealing
表 1 Pt生长条件与红外透过率的关系
Table 1 Relationship between Pt growth conditions and infrared transmittance
Sputtering power/W Sputtering times/s Thickness of Pt electrode /Å Infrared transmittance/(%) 52.7 5 116 37.3 52.7 2 48 50 40 5 50 50.9 30 5 46 66.8 20 5 38 77.3 15 4 20 86.1 10 5 26 83 18 5 30 80 
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