Abstract: The cut-off wavelength of the spectral responses of the Ⅲ-Ⅴ semiconductor alloys InAs_1-xSb_x can be changed from 3 to 12 μm by tuning the relative amount of antimony in the alloy at room temperature. In addition, with longer carrier lifetime, higher optical absorption coefficient and higher carrier mobility can be achieved. InAsSb is a type of prospective MWIR and LWIR detector material that has potential applications. InAsSb detector can work at 150 K even at near room temperature with higher sensitivity and detectivity. Hence, it is one of the best choices for low-power, miniaturized, low-cost, highly sensitive, and fast-response MWIR and LWIR detection systems. InAsSb detectors have been widely studied and developed. In this paper, the fundamental material properties are described. Next, the status of the InAsSb infrared photodetectors domestic and abroad is introduced. Finally, the development of the InAsSb infrared detection technology is summarized and prospected.