材料形貌对碲镉汞红外焦平面器件性能的影响

陈书真; 祁娇娇; 王丹; 程杰; 高华; 何斌

材料形貌对碲镉汞红外焦平面器件性能的影响

华北光电技术研究所, 北京 100015

详细信息

作者简介:
陈书真（1994-）女，硕士，助理工程师，主要研究方向：碲镉汞红外探测器芯片制备。E-mail：18801392275@139.com

中图分类号: TN213
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- 文章访问数: 120
- HTML全文浏览量: 24
- PDF下载量: 45
- 被引次数: 0
出版历程
- 收稿日期: 2021-06-26
- 修回日期: 2021-08-10
- 刊出日期: 2022-10-20

Effect of Material Morphology on the Performance of HgCdTe Infrared Focal Plane Devices

North China Research Institute of Electro-Optics, Beijing 100015, China

摘要

摘要: 碲镉汞材料表面的粗糙度对钝化膜层的质量、接触孔的光刻与刻蚀都有着显著的影响，研究其表面的粗糙度对器件性能的影响具有重要意义。在本文中，我们分别研究了碲镉汞的小平面形貌和台阶形貌对器件性能的影响，以及不同表面粗糙度的碲镉汞材料对器件制备工艺和最终性能的影响。研究表明，随着材料表面粗糙度的增加，钝化层的质量下降，接触孔的均匀性下降，且接触孔的形貌变差，I-V性能下降，最终导致器件的响应非均匀性增加，盲元数增加。
- 碲镉汞 /
- 生长台阶 /
- 粗糙度 /
- 盲元率 /
- 零偏阻抗 /
- 响应非均匀性
Abstract: The roughness of material surfaces has a significant impact on the quality of passivation films and the lithography and etching of contact holes. Therefore, studying the influence of the surface roughness of materials on the performance of HgCdTe infrared focal plane devices' is important. In this study, we separately evaluated the influence of the facet morphology and step morphology of mercury cadmium telluride on the performance of the device and the influence of mercury cadmium telluride materials with different surface roughness on the preparation process and final performance of the device. Studies have shown that as the surface roughness of the materials increases, the quality of the passivation layers decreases, uniformity of the contact holes decreases, morphology of the contact holes deteriorates, and I-V performance is degraded, eventually leading to an increase in the non-uniformity of the device responses and an increase in the blind pixel rate.
- mercury cadmium telluride /
- growth step /
- roughness /
- blind pixel rate /
- zero bias impedance /
- response non-uniformity

HTML全文

图 1 衬底晶向影响液相外延表面形貌的示意图^[1]

Figure 1. Schematic diagram of the influence of the crystal orientation of the substrate on the surface morphology of the liquid phase epitaxy^[1]

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图 2 碲镉汞焦平面器件的结构示意图

Figure 2. Schematic diagram of the structure of the HgCdTe focal plane device

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图 3 样品a、b、c、d、e和f的材料形貌显微照片

Figure 3. Photomicrographs of material topography, a, b, c, d, e, and f

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图 4 样品a、b、c、d、e和f接触孔的尺寸与深度的非均匀性

Figure 4. Non-uniformity of contact hole size and depth of samples a, b, c, d, e and f

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图 5 样品a、b、c、d、e和f接触孔的SEM形貌图

Figure 5. SEM topography of contact hole of samples a, b, c, d, e and f

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图 6 样品a、b、c、d、e和f的I-V和R-V曲线

Figure 6. I-V and R-V curves of samples a, b, c, d, e and f

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图 7 样品a和f的位错腐蚀图

Figure 7. Dislocation corrosion diagram of samples a and f

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图 8 阴影效应和再发射效应机理^[17-18]

Figure 8. Mechanism diagram of shadow effect and re-emission effect^[17-18]

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图 9 样品a、b、c、d、e、f的盲元图

Figure 9. Blind pixel of sample a, b, c, d, e and f

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表 1 样品粗糙度与接触孔相关参数和器件响应非均匀性的关系

Table 1. The relationship between sample roughness and contact hole related parameters and device response non-uniformity

Sample	Roughness /nm	Average size /μm	Non-uniformity of size/%	Average depth /μm	Non-uniformity of depth/%	Non uniformity of response/%
a	2.77	3.84	4.32	0.78	4.67	2.97
b	17.78	3.78	12.93	0.77	7.18	3.64
c	43.13	3.41	38.73	0.69	24.68	7.78
d	14.31	3.73	15.04	0.75	9.94	3.71
e	65.18	3.12	52.88	0.61	41.27	10.58
f	111.01	2.97	89.43	0.59	52.07	15.25

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表 2 样品a、b、c、d、e和f的粗糙度、盲元率和响应非均匀性

Table 2. Roughness, blind pixel rate and response non-uniformity of sample a, b, c, d, e and f

Sample	Roughness /nm	Blind pixel rate/(%)	Non uniformity of response/%
a	2.773	0.15	2.97
b	17.789	0.73	3.64
c	43.131	1.26	7.78
d	14.317	0.65	3.71
e	65.189	2.31	10.58
f	111.012	3.04	15.25

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