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Volume 47 Issue 8
Aug.  2022
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GAO Jiansen, LIU Jian. Characteristics of Photovoltage Spectrum on Surfaces of Gallium Nitride Photocathode Film Materials[J]. Infrared Technology , 2022, 44(8): 798-803.
Citation: GAO Jiansen, LIU Jian. Characteristics of Photovoltage Spectrum on Surfaces of Gallium Nitride Photocathode Film Materials[J]. Infrared Technology , 2022, 44(8): 798-803.
shu

Characteristics of Photovoltage Spectrum on Surfaces of Gallium Nitride Photocathode Film Materials

  • 1.

    School of Information Engineering, Suqian University, Suqian 223800, China

  • 2.

    School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

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  • Received Date: September 12, 2021
  • Revised Date: March 17, 2022
    Graphical Abstract
    • Abstract
  • In this study, we epitaxially grew a multilayer structure of gallium nitride (GaN) photocathode film material on a sapphire substrate and conducted a surface photovoltage test. The effects of doping type, thickness, and doping method on the surface photovoltage of the gallium nitride material were compared and analyzed, and the mechanism of surface photovoltage generation of the multi-layered gallium nitride material was determined. A surface photovoltage test was performed on uniformly doped and delta-doped gallium nitride photocathode thin film materials using sub-band-gap laser. Experimental data shows that better growth quality was achieved using δ-doping than that achieved using uniform doping; however, δ-doping increased the density of defect states in the (Ev+0.65)–(Ev+1.07) eV energy levels.
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    • References (21)
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