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Volume 44 Issue 12
Dec.  2022
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LI Xiaofeng, HE Yanbin, XU Chuanping, LI Jinsha, ZHANG Qindong. Choice of European Super Second Generation Image Intensifier Technology and its Further Development[J]. Infrared Technology , 2022, 44(12): 1249-1263.
Citation: LI Xiaofeng, HE Yanbin, XU Chuanping, LI Jinsha, ZHANG Qindong. Choice of European Super Second Generation Image Intensifier Technology and its Further Development[J]. Infrared Technology , 2022, 44(12): 1249-1263.
shu

Choice of European Super Second Generation Image Intensifier Technology and its Further Development

  • 1.

    North Night Vision Technology Co. Ltd, Kunming 650217, China

  • 2.

    Science and Technology on Low-light-level Night Vision Laboratory, Xi’an 710065, China

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  • Received Date: February 07, 2022
  • Revised Date: March 02, 2022
    Graphical Abstract
    • Abstract
  • The second-generation image intensifier adopts a Na2KSb photocathode, whereas the third-generation image intensifier adopts a GaAs photocathode. Given that GaAs photocathodes have a higher cathode sensitivity, the performance of the third-generation image intensifier is much higher than that of the second-generation image intensifier. The super second-generation image intensifier, developed on the basis of the second-generation image intensifier, has been greatly improved in terms of cathode sensitivity, and thus, its performance has also been greatly improved. Simultaneously, the gap with the third-generation image intensifier has been significantly shortened. Super second-generation image intensifiers belong to the material technology of Na2KSb, with low production cost and high cost performance compared with those of third-generation image intensifiers. Therefore, European image intensifier manufacturers chose the development roadmap for super second-generation image intensifiers. Super second- and third-generation image intensifier technologies have been developed in parallel for more than 30 years, and their performance has been greatly improved. The performance gap between super second- and third-generation image intensifiers is primarily reflected under conditions of extremely low illumination (<10−4 lx); the performance remains basically unchanged for levels above that. The performance of super-second-generation image intensifiers can still be improved. In terms of the gain, they can be improved by depositing a film of high secondary electron emission material on the inner wall of the microchannel plate. With respect to the signal-to-noise ratio, the grating window was introduced to improve the cathode sensitivity, thereby improving the signal-to-noise ratio. The resolution can be improved by inserting a semiconductor film at the output of the microchannel plate and adopting a high-definition fluorescent screen. Cathode sensitivity is a parameter of the photocathode components and not the overall performance parameter of the image intensifier. The influence of the cathode sensitivity on the overall performance of the image intensifier is embodied in the gain, signal-to-noise ratio, and equivalent background illumination. Different models are employed to distinguish between super second- and third-generation image intensifiers. These models give rise to different levels of performance. The performance parameters of super second- and third-generation image intensifiers are measured under the condition of a light source, but the spectral distribution in the actual application environment is not the same as that of the light source. The spectral responses of Na2KSb and GaAs photocathodes are different. Therefore, performance parameters such as signal-to-noise ratio and resolution of the super-second-generation and third-generation image intensifiers are not comparable.
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