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SHI Xiangdong, LAI Xiaoyan. Design of Field-Effect Transistor Quenching Circuit for Geiger-Mode Avalanche Photodiodes[J]. Infrared Technology , 2021, 43(1): 56-59,78.
Citation: SHI Xiangdong, LAI Xiaoyan. Design of Field-Effect Transistor Quenching Circuit for Geiger-Mode Avalanche Photodiodes[J]. Infrared Technology , 2021, 43(1): 56-59,78.
shu

Design of Field-Effect Transistor Quenching Circuit for Geiger-Mode Avalanche Photodiodes

  • Avic China Airborne Missile Academy, Luoyang 471009, China

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  • Received Date: May 05, 2020
  • Revised Date: January 06, 2021
    Graphical Abstract
    • Abstract
  • The avalanche photodiode (APD) is a photosensitive component commonly used in devices employed in the field of laser detection. In this study, a field-effect transistor quenching circuit is designed for a Geiger-mode (Gm)-avalanche photodiode for detecting avalanche effects. First, a circuit model of a Gm-APD was established based on the characteristics of a traditional Gm-APD device. Second, based on this model, afield-effect transistor quenching circuit was simulated to confirm the rapid quenching of the Gm-APD. Results indicated that the field-effect transistor quenching circuit in this study exhibited a high quenching speed, a short dead time, and improved performance. The quenching and death times were 21.026 and 16.5 ns, respectively, which meet the application requirements of laser ranging imaging.
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    • References (8)
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