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Volume 43 Issue 6
Jun.  2021
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GAO Tianyang, CAO Fengmei, WANG Xia, CUI Zhigang. Direct Coupling of Low Light Image Intensifier with Large Size CMOS[J]. Infrared Technology , 2021, 43(6): 537-542.
Citation: GAO Tianyang, CAO Fengmei, WANG Xia, CUI Zhigang. Direct Coupling of Low Light Image Intensifier with Large Size CMOS[J]. Infrared Technology , 2021, 43(6): 537-542.
shu

Direct Coupling of Low Light Image Intensifier with Large Size CMOS

  • 1.

    Key Laboratory of Photoelectronic Imaging Technology and System, Ministry of Education of China, Beijing Institute of Technology, Beijing 100081, China

  • 2.

    China General Technology Research Institute, Beijing 100091, China

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  • Received Date: September 13, 2020
  • Revised Date: October 24, 2020
    Graphical Abstract
    • Abstract
  • The large size direct coupling technology was studied by coupling a 40 mm diameter image intensifier with a full-frame CMOS. To solve the problems of large-size ICCD/ICMOS made by lens coupling, such as large volume, large light energy loss, and large number of moiré fringes in optical cone coupling devices, a direct coupling process is proposed to make ICCD/ICMOS. The large-size ICMOS developed in this study can obtain more information in the field of view. The resolution of the entire device is up to 3600×1800, the picture is clear, there is no obvious moiré fringe, and the structure is compact. The entire device has the size of a handheld digital camera and has strong concealability, which is conducive to obtaining target information more accurately and quickly in a complex environment.
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    • References (10)
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