Dark Current of Aluminum Oxide Passivation Film BCMOS Sensor Increased by Low Energy Electron Bombardment

YAN Lei; SHI Feng; CHENG Hongchang; JIAO Gangcheng; YANG Ye; XIAO Chao; FAN Haibo; ZHEN Zhou; DONG Haichen; HE Huiyang

Volume 46 Issue 3

Mar. 2024

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Infrared Technology > 2024 > 46(3): 342-346.

YAN Lei, SHI Feng, CHENG Hongchang, JIAO Gangcheng, YANG Ye, XIAO Chao, FAN Haibo, ZHEN Zhou, DONG Haichen, HE Huiyang. Dark Current of Aluminum Oxide Passivation Film BCMOS Sensor Increased by Low Energy Electron Bombardment[J]. Infrared Technology , 2024, 46(3): 342-346.

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Dark Current of Aluminum Oxide Passivation Film BCMOS Sensor Increased by Low Energy Electron Bombardment

YAN Lei^{1, 2,},
SHI Feng^{1, 2, ,},
CHENG Hongchang^{1, 2},
JIAO Gangcheng^{1, 2},
YANG Ye^{1, 2},
XIAO Chao^{1, 2},
FAN Haibo^{1, 2},
ZHEN Zhou^{1, 2},
DONG Haichen^{1, 2},
HE Huiyang^{1, 2}

1.
Science and Technology on Low-Light-Level Night Vision Laboratory, Xi'an 710065, China
2.
Kunming Institute of Physics, Kunming 650223, China

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Received Date: May 05, 2022
Revised Date: June 28, 2022

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Abstract

Abstract

This study designed a buried channel metal-oxide-semiconductor (BCMOS) image sensor experiment to address increased dark current caused by low-energy electron bombardment (300 eV to 1500 eV) on the alumina passivation layer. For a CMOS image sensor with a 10 nm alumina passivation layer, an increase in the dark current rate is obvious when the bombardment energy is greater than 600 eV. When the bombardment electron energy does not exceed 1.5 keV, the dark current has a maximum value of about 12000 e^-/pixel/s. Finally, after electron bombardment, the dark current of the CMOS image sensor decreased exponentially when the sensor was placed in an electronic drying cabinet. The main reason for the above phenomenon is the increased defect states at the interface between alumina passivation layer and silicon caused by incident electrons.
- dark current,
- electron bombardment,
- back-thinned CMOS,
- aluminum oxide passivation film

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