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WANG Bo, TANG Libin, ZHANG Yuping, DENG Gongrong, ZUO Wenbin, ZHAO Peng. Research Progress of Black Silicon Photoelectric Detection Materials and Devices[J]. Infrared Technology , 2022, 44(5): 437-452.
Citation: WANG Bo, TANG Libin, ZHANG Yuping, DENG Gongrong, ZUO Wenbin, ZHAO Peng. Research Progress of Black Silicon Photoelectric Detection Materials and Devices[J]. Infrared Technology , 2022, 44(5): 437-452.
shu

Research Progress of Black Silicon Photoelectric Detection Materials and Devices

  • 1.

    Kunming Institute of Physics, Kunming 650223, China

  • 2.

    School of Materials and Energy, Yunnan University, Kunming 650500, China

  • 3.

    Yunnan Key Laboratory of Advanced Photoelectric Materials and Devices, Kunming 650223, China

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  • Received Date: April 14, 2022
  • Revised Date: May 08, 2022
    Graphical Abstract
    • Abstract
  • As a new photoelectric material, black silicon has been widely studied in photovoltaic solar cells, photodetectors, CMOS image sensors and other fields. Among them, the photoelectric detection technology of black silicon has attracted much attention, and important research progress has been made in recent years. In this review, the structure of black silicon materials has been firstly introduced, then the properties of black silicon materials prepared by femtosecond laser etching, wet etching and reactive ion etching are briefly discussed. Secondly, the structure and performance of different black silicon photodetectors based on the above preparation methods are summarized, then the application of black silicon devices in different fields is discussed. Finally, the photoelectric detection technology of black silicon is analyzed and prospected, and the future development direction of black silicon materials and devices is discussed.
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    • References (66)
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