Citation: | REN Yang, LI Junbin, QIN Gang, YANG Jin, LI Yanhui, ZHOU Xuchang, YANG Chunzhang, CHANG Chao, KONG Jincheng, LI Dongsheng. Analysis of Interface Control Methods for InAs/GaSb Type-Ⅱ Superlattice Materials Grown by MBE[J]. Infrared Technology , 2021, 43(4): 301-311. |
[1] |
Sai-Halasz G A, Tsu R, Esaki L. A new semiconductor superlattice[J]. Applied Physics Letters, 1977, 30(12): 651-653. doi: 10.1063/1.89273
|
[2] |
Esaki L. InAs-GaSb superlattices-synthesized semiconductors and semimetals[J]. Journal of Crystal Growth, 1981, 52(1): 227-240. http://www.sciencedirect.com/science/article/pii/0022024881901986
|
[3] |
Smith D L, Mailhiot C. Proposal for strained type Ⅱ superlattice infrared detectors[J]. Journal of Applied Physics, 1987, 62(6): 2545-2548. doi: 10.1063/1.339468
|
[4] |
Mailhiot C, Smith D L. Electronic structure of (001) and (111) growth axis InAs-Ga1-xInxSb strained-layer superlattices[J]. J. Vac. Sci. Technol. B., 1987, 5(4): 1268-1273. doi: 10.1116/1.583817
|
[5] |
Chow D H, MilesR H, Sderstrm J R, et al. Growth and characterization of InAs-Ga1-xInxSb strained-layer superlattices[J]. Applied Physics Letters, 1990, 56(15): 1418-1420. doi: 10.1063/1.102486
|
[6] |
YANG M J, Bennett B R. InAs/GaSb infrared photovoltaic detector at 77 K[J]. Electronics Letters, 1994, 30(20): 1710-1711. doi: 10.1049/el:19941138
|
[7] |
Fuchs F, Weimer U, Pletschen W, et al. High performance InAs/Ga1-xInxSb superlattice infrared photodiodes[J]. Applied Physics Letters, 1997, 71(22): 3251-3253. doi: 10.1063/1.120551
|
[8] |
Manijeh Razeghi, Yajun Wei, Junjik Bae, et al. Type Ⅱ InAs/GaSb superlattices for high-performance photodiodes and FPAs[A]. Proc. of SPIE[C]//2003, 5246: 501-511.
|
[9] |
Razeghi M, Wei Y, Hood A, et al. Type Ⅱ superlattice photodetectors for MWIR to VLWIR focal plane arrays[C]//Proc. of SPIE, 2006, 6206: 62060N.
|
[10] |
Robert Rehm, Martin Walther, Johannes Schmitz, et al. 2nd and 3rd generation thermal imagers based on type-Ⅱ superlattice photodiodes[C]//Proc. of SPIE, 2006, 6294: 6294041-6294047.
|
[11] |
Rodriguez J B, Plis E, Bishop & G, et al. nBn structure based on InAs/GaSb type-Ⅱ strained layer superlattices[J]. Applied Physics Letters, 2007, 91(4): 043514. doi: 10.1063/1.2760153
|
[12] |
Kim H S, Plis E, Rodriguez J B, et al. Mid-IR focal plane array based on type-Ⅱ InAs∕GaSb strain layer superlattice detector with nBn design[J]. Applied Physics Letters, 2008, 92(18): 183502. doi: 10.1063/1.2920764
|
[13] |
Gunapala S D, Ting D Z, Hill C J, et al. Demonstration of 1 k×1 k long-wave and mid-wave superlattice infrared focal plane array[C]//SPIE, 2010, 7808: 78080201-78080206.
|
[14] |
HUANG K W, Haddadi A, CHEN G, et al. Type-Ⅱ superlattice dual-band LWIR imager with M-barrier and Fabry-Perot resonance[J]. Optics Letters, 2011, 36(13): 2560-2. doi: 10.1364/OL.36.002560
|
[15] |
Gautam N, Naydenkov M, Myers S, et al. Three color infrared detector using InAs/GaSb superlattices with unipolar barriers[J]. Appl. Phys. Lett. 2011, 98: 121106. doi: 10.1063/1.3570687
|
[16] |
Edward Kwei-wei Huang, Manijeh Razeghi. World's first demonstration of type-Ⅱ superlattice dual band 640×512 LWIR focal plane array[C]//Proc. of SPIE, 2012, 8268: 82680Z.
|
[17] |
Razeghi M, Haddadi A, Hoang A M, et al. High-performance bias-selectable dual-band mid-/long -wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb Type-Ⅱ superlattices[J]. Proceedings of SPIE - The International Society for Optical Engineering, 2013, 8704: 87040S.
|
[18] |
Hoang A M, Dehzangi A, Adhikary S, et al. High performance bias-selectable three-color short-wave/mid-wave/long-wave infrared photodetectors based on type-Ⅱ InAs/GaSb/AlSb superlattices[J]. Rep, 2016, 6: 24144. http://pubmedcentralcanada.ca/pmcc/articles/PMC4823788/
|
[19] |
Rogalski A, Antoszewski J, Faraone L. Third-generation infrared photodetector arrays[J]. Journal of applied physics, 2009, 105(9): 4. doi: 10.1063/1.3099572
|
[20] |
Mir R N, Frensley W R. Electrical design of InAs-Sb/GaSb superlattices for optical detectors using full band structure sp3s* tight-binding method and Bloch boundary conditions[J]. Journal of Applied Physics, 2013, 114(15): 153706. doi: 10.1063/1.4824365
|
[21] |
Nguyen B M, Bogdanov S, Pour S A, et al. Minority electron unipolar photodetectors based on type Ⅱ InAs/GaSb/AlSb superlattices for very long wavelength infrared detection[J]. Applied Physics Letters, 2009, 95(18): 183502. doi: 10.1063/1.3258489
|
[22] |
WEI Y, Razeghi M, Brown G J, et al. Modeling type-Ⅱ InAs/GaSb superlattices using empirical tight-binding method: new aspects[C]//Quantum Sensing and Nanophotonic Devices, International Society for Optics and Photonics, 2004, 5359: 301-309.
|
[23] |
Rogalski A. New material systems for third generation infrared detectors[C]//Ninth International Conference on Correlation Optics, International Society for Optics and Photonics, 2009, 7388: 73880J.
|
[24] |
Tobin S P, Hutchins M A, Norton P W. Composition and thickness control of thin LPE HgCdTe layers using x-ray diffraction[J]. Journal of Electronic Materials, 2000, 29(6): 781-791. doi: 10.1007/s11664-000-0225-y
|
[25] |
Grein C H, Young P M, Flatte M E, et al. Long wavelength InAs/InGaSb infrared detectors: optimization of carrier lifetimes[J]. Journal of Applied Physics, 1995, 78(12): 7143-7152. doi: 10.1063/1.360422
|
[26] |
Rodriguez J B, Christol P, Cerutti L, et al. MBE growth and characterization of type-Ⅱ InAs/GaSb superlattices for mid-infrared detection[J]. Journal of Crystal Growth, 2005, 274(1): 6-13. http://www.sciencedirect.com/science/article/pii/S0022024804012163
|
[27] |
Fuchs F, Weimer U, Pletschen W, et al. High performance InAs/Ga1-xInxSb superlattice infrared photodiodes[J]. Applied physics letters, 1997, 71(22): 3251-3253. doi: 10.1063/1.120551
|
[28] |
王国伟. 中长波InAs/GaSbⅡ类超晶格材料与红外探测器[D]. 北京: 中国科学院研究生院, 2012.
WANG Guowei. Mid-wavelength and Long-wavelength InAs/GaSb Type-Ⅱ Superlattices Material and Infrared Photodiodes[D]. Beijing: Institute of Semiconductors Chinese Academy of Sciences Graduate School of the Chinese Academy of Sciences, 2012.
|
[29] |
Yano M, Yokose H, Iwai Y, et al. Surface-reaction of Ⅲ-Ⅴ compound semiconductors irradiated by As and Sb molecular-beams[J]. J. Cryst Growth, 1991, 111(1-4): 609. doi: 10.1016/0022-0248(91)91049-G
|
[30] |
Twigg M E, Bennett B R, Thibado P M, et al. Interfacial disorder in InAs/GaSb superlattices[J]. Philosophical Magazine A, 1998, 77(1): 7-30. doi: 10.1080/13642819808206380
|
[31] |
Jackson E M, Boishin G I, Aifer E H, et al. Arsenic cross-contamination in GaSb/InAs superlattices[J]. Journal of Crystal Growth, 2004, 270(3-4): 301-308. doi: 10.1016/j.jcrysgro.2004.06.033
|
[32] |
Chow D H, Miles R H, Hunter A T. Effects of interface Stoichiometry on the structural and electronic-properties of Ga1-xInxSb/InAs superlattices[J]. Journal of Vacuum Science & Technology B, 1992, 10(2): 888-91. doi: 10.1116/1.586144
|
[33] |
WANG M W, Collins D A, McGill T C, et al. Ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface[J]. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993, 11(4): 1418-22. http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=4962644
|
[34] |
Bennett B R, Shanabrook B V, Wagner R J, et al. Interface composition control in InAs/GaSb superlattices[J]. Solid-state Electronics, 1994, 37(4-6): 733-737. doi: 10.1016/0038-1101(94)90288-7
|
[35] |
Chow D H, Miles R H, Hunter A T, et al. Effects of interface stoichiometry on the structural and electronic properties of Ga1−xInxSb/InAs superlattices[J]. Journal of Vacuum Science & Technology B, 1992, 10(2): 888-891. doi: 10.1116/1.586144
|
[36] |
Omaggio J P, Meyer J R, Wagner R J, et al. Determination of band gap and effective masses in InAs/GaInSb Superlattices[J]. Appl. Phys. Lett. 1992, 61(2): 207-209. doi: 10.1063/1.108219
|
[37] |
Youngdale E R, Meyer J R, Hoffman C A, et al. Recombination lifetime in InAs-GaInSb superlattices[J]. J. Vac. Sci. Technol. B, 1994, 12(2): 1129-1135. doi: 10.1116/1.587064
|
[38] |
Thibado P M, Bennett B R, Twigg M E, et al. Origins of interfacial disorder in GaSb/InAs superlattices[J]. Applied Physics Letters, 1995, 67(24): 3578-3580. doi: 10.1063/1.115323
|
[39] |
Tahraoui A, Tomasini P, Lassabatere L, et al. Growth and optimization of InAs/GaSb and GaSb/InAs interfaces[J]. Applied Surface Science, 2000, 162: 425-429. http://www.sciencedirect.com/science/article/pii/S0169433200002270
|
[40] |
Schmitz J, Wagner J, Fuchs F, et al. Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecularbeam epitaxy[J]. Journal of Crystal Growth, 1995, 150(1): 858-862. http://www.sciencedirect.com/science/article/pii/002202489580061G
|
[41] |
Booker G R, Klipstein P C, Lakrimi M, et al. Growth of InAs/GaSb strained layer superlattices Ⅱ[J]. Journal of Crystal Growth, 1995, 146(1-4): 495-502. doi: 10.1016/0022-0248(94)00536-2
|
[42] |
Daly M S, Symons D M, Lakrimi M, et al. Interface composition dependence of the band offset in InAs/GaSb[J]. Semiconductor Science and Technology, 1996, 11(5): 823-6. doi: 10.1088/0268-1242/11/5/001
|
[43] |
Young M H, Chow D H, Hunter A T, et al. Recent advances in Ga1−xInxSb/InAs superlattice IR detector materials[J]. Applied Surface Science, 1998, 123-124: 395-399. doi: 10.1016/S0169-4332(97)00490-X
|
[44] |
Steinshnider J, Weimer M, Kaspi R, et al. Visualizing interfacial structure at non-common-atom heterojunctions with cross-sectional scanning tunneling microscopy[J]. Physical Review Letters, 2000, 85(14): 2953-2956. doi: 10.1103/PhysRevLett.85.2953
|
[45] |
Steinshnider J, Harper J, Weimer M, et al. Origin of antimony segregation in GaInSb/InAs strained-layer superlattices[J]. Physical Review Letters, 2000, 85(21): 4562-4565. doi: 10.1103/PhysRevLett.85.4562
|
[46] |
Feenstra R M, Collins D A, Mcgill T C, et al. Scanning tunneling microscopy of InAs/GaSb superlattices with various growth conditions[J]. Superlattices and Microstructures, 1994, 15(2): 215-220. doi: 10.1006/spmi.1994.1043
|
[47] |
Nosho B Z, Bennett B R, Whitman L J, et al. Effects of As2 versus As4 on InAs/GaSb heterostructures: As-for-Sb exchange and film stability[J]. Journal of Vacuum Science & Technology B, 2001, 19(4): 1626-1630. doi: 10.1116/1.1386377
|
[48] |
Nosho B Z, Barvosacarter W, Yang M J, et al. Interpreting interfacial structure in cross-sectional STM images of Ⅲ–V semiconductor heterostructures[J]. Surface Science, 2000, 465(3): 361-371. doi: 10.1016/S0039-6028(00)00732-9
|
[49] |
Plis E, Khoshakhlagh A, Myers S, et al. Molecular beam epitaxy growth and characterization of type-Ⅱ InAs/GaSb strained layer superlattices for long-wave infrared detection[J]. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2010, 28(3): C3G13 -C3G18. doi: 10.1116/1.3276429
|
[50] |
WEI Y J, Razeghi M. Modeling of type-Ⅱ InAs/GaSb superlattices using an empirical tight-binding method and interface engineering[J]. Physical Review B, 2004, 69(8): 085316. doi: 10.1103/PhysRevB.69.085316
|
[51] |
Szmulowicz F, Haugan H J, Brown G J, et al. Interfaces as design tools for short-period InAs/GaSb type-Ⅱ superlattices for mid-infrared detectors[J]. Opto-Electronics Review, 2006, 14(1): 71-7. doi: 10.1117/12.622219
|
[52] |
Luna E, Satpati B, Rodriguez J B, et al. Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy[J]. Appl. Phys. Lett. , 2010, 96(2): 021904. doi: 10.1063/1.3291666
|
[53] |
Matthews J W, Blakeslee A E. Defects in epitaxial multilayers: I. Misfit dislocations[J]. Journal of Crystal Growth, 1974, 27: 118-125. http://www.sciencedirect.com/science/article/pii/S0022024874800552
|
[54] |
Fritz I J, Picraux S T, Dawson L R, et al. Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices[J]. Applied Physics Letters, 1985, 46(10): 967-969. doi: 10.1063/1.95783
|
[55] |
Razeghi M, WEI Y, GIN A, et al. High performance type Ⅱ InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays[J]. Proceedings of SPIE, 2005, 5783: 86-97. doi: 10.1117/12.605291
|
[56] |
WEI Y, Hood A, Yau H, et al. High-performance type-Ⅱ InAs/GaSb superlattice photodiodes with cutoff wavelength around 7 μm[J]. Applied Physics Letters, 2005, 86(9): 091109. doi: 10.1063/1.1879113
|
[57] |
Haugan H J, Szmulowicz F, Mahalingam K, et al. Short-period InAs/GaSb type-Ⅱ superlattices for mid-infrared detectors[J]. Applied Physics Letters, 2005, 87(26): 261106. doi: 10.1063/1.2150269
|
[58] |
ZHANG X, Ryou J, Dupuis R D, et al. Improved surface and structural properties of InAs∕GaSb superlattices on (001) GaSb substrate by introducing an InAsSb layer at interfaces[J]. Applied Physics Letters, 2007, 90(13): 131110. doi: 10.1063/1.2717524
|
[59] |
Sullivan G J, Ikhlassi A, Bergman J, et al. Molecular beam epitaxy growth of high quantum efficiency InAs/GaSb superlattice detectors[J]. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2005, 23(3): 1144-1148. doi: 10.1116/1.1928238
|
[60] |
Waterman J R, Shanabrook B V, Wagner R J, et al. The effect of interface bond type on the structural and optical properties of GaSb/InAs superlattices[J]. Semiconductor Science and Technology, 1993, 8(1S): S106. doi: 10.1088/0268-1242/8/1S/024
|
[61] |
XIE Q, Van Nostrand J E, Brown J L, et al. Arsenic for antimony exchange on GaSb, its impacts on surface morphology, and interface structure[J]. J. Appl. Phys. , 1999, 86(1): 329-37. doi: 10.1063/1.370733
|
[62] |
Khoshakhlagh A, Plis E, Myers S, et al. Optimization of InAs/GaSb type-Ⅱ superlattice interfaces for long-wave (~8 μm) infrared detection[J]. Journal of Crystal Growth, 2009, 311(7): 1901-1904. doi: 10.1016/j.jcrysgro.2008.11.027
|
[63] |
ZHONG M, Steinshnider J, Weimer M, et al. Combined x-ray diffraction/scanning tunneling microscopy study of segregation and interfacial bonding in type-Ⅱ heterostructures[J]. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2004, 22(3): 1593-1597. doi: 10.1116/1.1699341
|
[64] |
Plis E, Annamalai S, Posani K T, et al. Midwave infrared type-Ⅱ InAs/GaSb superlattice detectors with mixed interfaces[J]. J. Appl. Phys., 2006, 100(1): 4.
|
[65] |
Horikoshi Y, Kawashima M, Yamaguchi H. Migration-enhanced epitaxy of GaAs and AlGaAs[J]. Japanese Journal of Applied Physics, 1988, 27(part 1): 169-179. doi: 10.1143/JJAP.27.169
|
[66] |
Gadaleta C, Scamarcio G, Fuchs F, et al. Influence of the interface bond type on the far-infrared reflectivity of InAs/GaSb superlattices[J]. Journal of Applied Physics, 1995, 78(9): 5642-5644. doi: 10.1063/1.359689
|
[67] |
Jasik A, Sankowska I, Pierścinska D, et al. Blueshift of bandgap energy and reduction of non-radiative defect density due to precise control of InAs-on-GaSb interface in type-Ⅱ InAs/GaSb superlattice[J]. Journal of Applied Physics, 2011, 110(12): 123103. doi: 10.1063/1.3671024
|
[68] |
徐志成. InAs/GaSb Ⅱ类超晶格探测器结构MBE生长研究[D]. 北京: 中国科学院研究生院, 2014.
XU Zhicheng. Study on the Molecular Beam Epitaxy Growth of InAs/GaSb type Ⅱ Superlattice Infrared Detection Structure[D]. Beijing: Institute of Semiconductors Chinese Academy of Sciences Graduate School of the Chinese Academy of Sciences, 2014.
|
[69] |
Guo Jie, Sun Wei-Guo, Peng Zhen-Yu, et al. Interfaces in InAs/GaSb superlattices grown by molecular beam epitaxy[J]. Chinese Physics Letters, 2009, 26(4): 047802. doi: 10.1088/0256-307X/26/4/047802
|
[70] |
周志强. InAs/GaSb超晶格及量子点材料生长研究[D]. 北京: 中国科学院研究生院, 2009.
ZHOU Zhiqiang. Study on the Growth of InAs/GaSb Superlattices and Quantum Dots[D]. Beijing: Institute of Semiconductors Chinese Academy of Sciences Graduate School of the Chinese Academy of Sciences, 2009.
|
[71] |
ZHANG Y, MA W, CAO Y, et al. Long wavelength infrared InAs/GaSb superlattice photodetectors with InSb-like and mixed interfaces[J]. IEEE Journal of Quantum Electronics, 2011, 47(12): 1475-1479. doi: 10.1109/JQE.2011.2168947
|
[72] |
WEI Y, MA W, ZHANG Y, et al. High structural quality of type Ⅱ InAs/GaSb superlattices for very long wavelength infrared detection by interface control[J]. IEEE Journal of Quantum Electronics, 2012, 48(4): 512-515. doi: 10.1109/JQE.2012.2186955
|
[73] |
Twigg M E, Bennett B R, Shanabrook B V, et al. Interfacial roughness in InAs/GaSb superlattices[J]. Applied Physics Letters, 1994, 64(25): 3476-3478. doi: 10.1063/1.111245
|
[74] |
徐庆庆, 陈建新, 周易, 等. InAs/GaSb超晶格中波焦平面材料的分子束外延技术[J]. 红外与毫米波学报, 2011, 30(5): 406-408. https://www.cnki.com.cn/Article/CJFDTOTAL-HWYH201105005.htm
XU Qingqing, CHEN Jianxin, ZHOU Yi, et al. Mid-wavelength infrared InAs/GaSb superlattice grown by molecular beam epitaxy[J]. Journal of Infrared and Millimeter Waves, 2011, 30(5): 406~408. https://www.cnki.com.cn/Article/CJFDTOTAL-HWYH201105005.htm
|
[75] |
周易, 陈建新, 徐庆庆, 等. 长波InAs/GaSb Ⅱ类超晶格红外探测器[J]. 红外与毫米波学报, 2013, 32(3): 210-213. https://www.cnki.com.cn/Article/CJFDTOTAL-HWYH201303001.htm
ZHOU Yi, CHEN Jianxin, XU Qingqing, et al. Long wavelength infrared detector based on type-Ⅱ InAs/GaSb superlattice[J]. Journal of Infrared and Millimeter Waves, 2013, 32(3): 210-213. https://www.cnki.com.cn/Article/CJFDTOTAL-HWYH201303001.htm
|