| Citation: |
DENG Wenbin, SONG Linwei, KONG Jincheng, JIANG Jun, YANG Jin, QI Wenbin, WAN Zhiyuan, LIU Yan, RONG Huiyu, XU Jiangming, YANG Xiang, ZHU Xun, ZHENG Yaozheng, JI Rongbin. Progress in LPE Growth of HgCdTe Film at 100 mm×100 mm[J]. Infrared Technology , 2024, 46(10): 1172-1177.
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The Kunming Institute of Physics has achieved significant advancements in the directional growth technology of ϕ150 mm cadmium zinc telluride (CZT) single crystals, thus enabling the small-scale production of 100 mm× 100 mm CZT substrates. The dislocation etch pit density (EPD) is ≤4×104cm-2, with precipitate dimensions of < 5 μm and a density of < 5×103cm-2. In addition, 100 mm×100 mm large-area mercury cadium telluride (MCT) thin films were successfully prepared via the surface treatment of large-sized CZT substrates and tellurium-rich horizontal sliding-boat liquid-phase epitaxy. These films exhibit excellent surface quality, with thickness variation within ±1.25μm and compositional variation better than ±0.0031. This achievement represents the largest area of CZT-based MCT thin films reported internationally and therefore provides a solid foundation for the development of 10 k× 10k or larger-scale infrared detectors and the mass production of 4 k× 4k scale infrared detector products.
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