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退火处理对锑化铟MIS器件C-V特性的影响

周伟佳 龚晓霞 陈冬琼 肖婷婷 尚发兰 杨文运

周伟佳, 龚晓霞, 陈冬琼, 肖婷婷, 尚发兰, 杨文运. 退火处理对锑化铟MIS器件C-V特性的影响[J]. 红外技术, 2022, 44(4): 351-356.
引用本文: 周伟佳, 龚晓霞, 陈冬琼, 肖婷婷, 尚发兰, 杨文运. 退火处理对锑化铟MIS器件C-V特性的影响[J]. 红外技术, 2022, 44(4): 351-356.
ZHOU Weijia, GONG Xiaoxia, CHEN Dongqiong, XIAO Tingting, SHANG Falan, YANG Wenyun. Effect of Annealing on C-V Characteristics of InSb Metal-Insulator-Semiconductor Devices[J]. Infrared Technology , 2022, 44(4): 351-356.
Citation: ZHOU Weijia, GONG Xiaoxia, CHEN Dongqiong, XIAO Tingting, SHANG Falan, YANG Wenyun. Effect of Annealing on C-V Characteristics of InSb Metal-Insulator-Semiconductor Devices[J]. Infrared Technology , 2022, 44(4): 351-356.

退火处理对锑化铟MIS器件C-V特性的影响

详细信息
    作者简介:

    周伟佳(1997-),男,硕士研究生,主要研究领域为锑化铟红外探测器。E-mail:zhou.weijia@foxmail.com

    通讯作者:

    龚晓霞(1984-),女,高级工程师,主要从事Ⅲ-Ⅴ族红外探测器研究。E-mail:641592956@qq.com

  • 中图分类号: TN213

Effect of Annealing on C-V Characteristics of InSb Metal-Insulator-Semiconductor Devices

  • 摘要: 采用原子层沉积技术制备Al2O3薄膜作为InSb材料介电层,制备了MIS器件,研究了金属化后不同退火温度对界面特性的影响。利用C-V测试表征了MIS(metal-insulator-semiconductor)器件的界面特性,结果表明Al2O3介电层引入了表面固定正电荷,200℃和300℃退火处理可有效减小慢界面态密度,利用Terman法得到了禁带界面态密度分布,表明200℃退火可使禁带中央和导带附近的界面态密度显著减小。同时文章对C-V曲线滞回的原因进行了分析,认为Al2O3介电层中离界面较近的负体陷阱电荷是主要影响因素。实验证明了200℃~300℃的退火处理可有效改善InSb/Al2O3界面质量。
  • 图  1  有关使用不同沉积方式制备Al2O3作为光伏器件钝化层的文献的累计数量[7]

    Figure  1.  Cumulative count of literatures relating primarily to Al2O3 for surface passivation of photovoltaic devices, divided by the deposition method employed[7]

    图  2  不同退火温度的C-V特性

    Figure  2.  C-V characteristics at different annealing temperature

    图  3  不同退火温度下C-V曲线的滞回特性(实线表示从反型区开始扫描,虚线表示从积累区开始扫描)

    Figure  3.  Hysteresis C-V curves at different annealing temperature (Solid line denotes scanning from the inversion region, dotted line denotes scanning from the accumulation region)

    图  4  不同扫描方向和起始偏压的C-V曲线:(a) 从积累区开始扫描;(b) 从反型区开始扫描

    Figure  4.  C-V curves with different scanning directions and initial bias: (a) Scan from the accumulation region; (b) Scan from the inversion region

    图  5  高频C-V曲线的测量值和模拟值

    Figure  5.  Measured and simulated high frequency C-V curves

    图  6  理想栅电压与表面势的关系曲线

    Figure  6.  Ideal relationship curve of gate voltage and surface potential

    图  7  界面态密度在禁带中的分布(相对于本征费米能级Ei

    Figure  7.  Interface state density as a function of energy in the bandgap(relative to the intrinsic Fermi level Ei)

    表  1  样品对应的退火条件

    Table  1.   Annealing conditions corresponding to the sample

    Sample Annealing conditions
    #1 Without annealing(w/o PMA)
    #2 200℃, 5 min(PMA@200℃)
    #3 300℃, 5 min(PMA@300℃)
    下载: 导出CSV

    表  2  不同退火条件的平带电压及对应的固定电荷的大小

    Table  2.   Flat band voltage and fixed surface charge density at different annealing conditions

    w/o PMA PMA
    @200℃
    PMA
    @300℃
    VFB/V 0.82 −3.2 −3
    Qf /cm−2 −8.4716×1011 2.8823×1012 2.7466×1012
    下载: 导出CSV

    表  3  不同退火条件的滞回电压及慢界面态密度

    Table  3.   Voltage hysteresis and slow interface states density at different annealing conditions

    w/o PMA PMA
    @200℃
    PMA
    @300℃
    VFB/V 6.75 5.8 3.6
    Ntrap/cm−2 4.2×1012 3.6×1012 2.2×1012
    下载: 导出CSV
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    ZHOU G S. Analysis of zero bias junction impedance and junction area product of photovoltaic InSb infrared detector[J]. Aero Weaponry, 1999(1): 10-17 https://www.cnki.com.cn/Article/CJFDTOTAL-HKBQ199901003.htm
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    CHANG H D. Research on High Mobility InGaAs Channel MOSFET Devices[D]. Beijing: University of Chinese Academy of Sciences, 2013.
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出版历程
  • 收稿日期:  2021-09-01
  • 修回日期:  2021-10-18
  • 刊出日期:  2022-04-20

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