碲锌镉衬底表面处理研究

江先燕; 丛树仁; 宁卓; 起文斌; 刘燕; 宋林伟; 孔金丞

碲锌镉衬底表面处理研究

昆明物理研究所, 云南昆明 650223

详细信息

作者简介:
江先燕（1993-），女，博士，主要从事红外材料与器件方面的研究，E-mail：jxy0709_kmwlyjs@163.cm

通讯作者:
丛树仁（1978-），男，博士，主要从事红外材料与器件方面的研究，E-mail: congshuren@126.com

中图分类号: TN213
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- 文章访问数: 131
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- PDF下载量: 46
- 被引次数: 0
出版历程
- 收稿日期: 2022-10-24
- 修回日期: 2023-02-21
- 刊出日期: 2023-11-20

Surface Processing of Cadmium Zinc Telluride Substrates

Kunming Institute of Physics, Kunming 650223, China

摘要

摘要: 主要从碲锌镉表面处理工艺及表面位错缺陷揭示两个方面对碲锌镉衬底的表面处理研究进行了详细介绍。从表面处理机理和工艺参数对衬底表面的影响两个方面介绍了机械研磨、机械抛光、化学机械抛光以及化学抛光4种表面处理工艺。同时，介绍了能揭示碲锌镉不同晶向表面的位错缺陷的Everson、Nakagawa及E_Ag三种化学腐蚀液。
- 碲锌镉(CZT) /
- 表面处理 /
- 位错揭示
Abstract: In this study, the surface processing of cadmium zinc telluride (CZT) substrates was studied, which revealed surface dislocation defects. The surface processing mechanism and influence of the process parameters on the surface of the CZT substrates, including mechanical grinding, mechanical polishing, chemical mechanical polishing, and chemical polishing, are presented. Moreover, three types of chemical etchants, Everson, Nakagawa, and E_Ag, which reveal dislocation defects on the surface of CdZnTe with different crystal orientations, were also investigated.
- cadmium zinc telluride (CZT) /
- surface processing /
- dislocation revealing

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图 1 机械研磨装置及研磨机理示意图

Figure 1. Schematic diagram of mechanical grinding device and grinding mechanism

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图 2 磨料种类及磨料粒径与表面粗糙度和材料去除速率的关系^[8]

Figure 2. The relationship between abrasive type, size and surface roughness and material removal rate ^[8]

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图 3 不规则磨料及规则磨料的扫描电镜图

Figure 3. Scanning electron microscopy images of abrasives with irregular and regular shape

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图 4 不规则磨料及板片状磨料去除机理示意图^[23]

Figure 4. Schematic diagram of removal mechanism of abrasives with irregular shape and plate-like abrasives

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图 5 磨盘示意图

Figure 5. Schematic diagram of grinding disc

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图 6 机械抛光装置及抛光原理示意图

Figure 6. Schematic diagram of mechanical polishing device and polishing mechanism

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图 7 不同厂家生产的同种抛光液的机械抛光表面

Figure 7. Surface states after mechanical polishing with the same polishing slurry produced by different manufacturers

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图 8 不同粒径的抛料抛光后的CZT平均表面粗糙度^[27]

Figure 8. Average surface roughness of CZT crystal after different types of polishing^[27]

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图 9 抛光垫表面纹理图^[29]

Figure 9. Polishing pad surface texture^[29]

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图 10 化学机械抛光工艺后碲锌镉晶片的表面粗糙度

Figure 10. Surface roughness of CZT after chemical mechanical polishing process

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图 11 CZT衬底表面PV值和表面粗糙度随NaClO浓度的变化关系^[32]

Figure 11. Surface PV value and surface roughness of CZT substrates as a function of NaClO concentation^[32]

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图 12 CZT经多线切割、机械研磨及化学机械抛光后的表面光学图和化学机械抛光后的表面粗糙度及形貌图^[35]

Figure 12. Optical images of CZT after multi-wire sawing, mechanical grinding and chemical mechanical polishing, and surface roughness and morphology after chemical mechanical polishing^[35]

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图 13 化学抛光装置及抛光原理示意图

Figure 13. Schematic diagram of chemical polishing device and polishing mechanism

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图 14 不同溴浓度下碲锌镉衬底去除量与表面粗糙度的关系^[40]

Figure 14. Correlation between the surface roughness and stock removal of CdZnTe substrates for several concentrations of bromine^[40]

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图 15 材料去除速率与I₂浓度的关系及化抛后样品表面粗糙度（10wt% I₂）^[42]

Figure 15. Correlation between material removal rate and I₂ concentration, and surface roughness of samples after chemical polishing

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图 16 样品反复抛光和腐蚀后得到腐蚀坑轨迹示意图及两个腐蚀阶段的腐蚀坑光学图^[48]

Figure 16. Traces of etch pits down from a specimen surface in a successive polishing and etching experiment, and optical micrographs of an etch-pit array observed in two etching stages are shown on the right

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图 17 腐蚀坑TEM图和(111)A面与B面的腐蚀坑密度对比^[49]

Figure 17. TEM image of pits and bar graph comparing EPDs on A and B faces of (111)

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图 18 腐蚀坑形貌图^[49]

Figure 18. Morphology of pits formed on (111)B and (211)B

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图 19 CdTe不同晶面腐蚀坑形貌图：(a) (100)晶面-E_Ag-1；(b) (110)晶面-E_Ag-1；(c) (111)晶面-E_Ag-1；(d) ($ \bar 1\bar 1\bar 1 $)晶面-E_Ag-1；(e) (111)晶面-E_Ag-2^[52]

Figure 19. Morphology of pits formed on different CdTe planes, (a) (100)- E_Ag-1, (b) (110)- E_Ag-1, (c) (111)- E_Ag-1, (d) ($ \bar 1\bar 1\bar 1 $)- E_Ag-1 and (e) (111)- E_Ag-2^[52]

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表 1 碲锌镉（Cd_0.96Zn_0.04Te）与单晶硅（Si）的基本物理性质对比

Table 1. Comparison of physical properties between cadmium zinc telluride (Cd_0.96Zn_0.04Te) and monocrystalline silicon (Si)

Parameters	CdZnTe	Si
Lattice constants a/(Å)	6.485(300 K)	5.43(300 K)
Equilibrium segregation coefficient	1.35	-
Expansion coefficient β/(K^-1)	4.96×10^-6(300 K)	2.6×10^-6(300 K)
Elastic modulus E/(MPa)	7.17×10⁴	1.31×10⁵
Thermal conductivity κ/(W·cm^-1·K^-1)	0.01(300 K)	1.5(300 K)
Thermal diffusivity D_θ/(mm²·s^-1)	6.0×10^-7(300 K)	90.0
Poisson’s ratio	0.16	0.28
Density ρ/(g·cm^-3)	5.68	2.33

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表 2 开槽和不开槽研磨盘对晶片研磨效果的影响

Table 2. Influence of slotted and non-slotted grinding discs on wafer grinding efficiency

Factors	Slotted	non-slotted
^*Material removal rate/(μm/min)	3-4(< 3 in)	5-8(< 3 in)
^*Material removal rate/(μm/min)	3-4(≥3 in)	1-2(≥3 in)
Total thickness variation	similar	similar
Number of surface scratches	high	low
Processable wafer size	≥3 in	< 3 in
注：表示该数据是本单位实际测试数据。 Note: The data tested in this work.

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表 3 不同表面处理后的(211)B CdZnTe样品的XPS测试结果^[42]

Table 3. Results of XPS evaluation for (211)B CdZnTe samples for different surface treatments^[42]

Surface treatment	Te overall/ (Cd + Zn) atomic ratio	Te oxide/ Te elemental atomic ratio
I₂-methanol	1.8	1.4
Annealed 330℃/1 min	1.0	0.7
Annealed 330℃/10 min	1.0	0.6
Annealed 350℃/10 min	1.0	0.5
Br₂-methanol	2.2	2.1
Annealed 330℃/1 min	1.6	1.3

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表 4 两种腐蚀液得到的CdTe单晶EPDs对比^[49]

Table 4. Comparison of EPDs tested by two corrosion solutions^[49]

	Nakagawa	Everson
(111)A	44×10⁴ cm^-2	N/A
(111)B	N/A	35×10⁴ cm^-2
(211)A	N/A	N/A
(211)B	N/A	20×10⁴ cm^-2

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