金掺杂碲镉汞红外探测材料及器件技术

Au-Doped HgCdTe Infrared Material and Device Technology

摘要: 采用金掺杂替代作为深能级缺陷中心的汞空位，可明显提高P型碲镉汞材料少子寿命，进而降低以金掺杂P型材料为吸收层n-on-p型碲镉汞器件的暗电流，明显提升了n-on-p型碲镉汞器件性能，是目前高灵敏度、高分辨率等高性能n-on-p型长波/甚长波以及高工作温度中波碲镉汞器件研制的一种技术路线选择。本文在分析评述金掺杂碲镉汞材料现有研究技术要点的基础上，结合昆明物理研究所目前的研究成果，总结了碲镉汞金掺杂相关工艺技术，重点分析了金掺杂对碲镉汞器件性能的影响。

Abstract: The minority carrier lifetime of p-type HgCdTe materials can be improved significantly by using Au atoms instead of Hg vacancies, which have been considered as deep-level energy recombination centers; consequently, the dark current of n-on-p HgCdTe devices reduced and performance improved. Further, Au doping is helpful for developing high-performance n-on-p LWIR/VLWIR and high operating temperature (HOT) MWIR HgCdTe infrared detectors with high resolution and high sensitivity. In this paper, Au-doped HgCdTe IR material and device technologies were reviewed. Critical processes and the effect of Au doping on the device properties were discussed as well.