Research Progress of InAs/GaSb Type-Ⅱ Superlattice Long-wave Infrared Detector
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摘要: 本文系统报道了基于InAs/GaSb Ⅱ类超晶格（T2SLs）的长波红外探测器的研究进展。从衬底、材料生长以及器件性能角度对比分析了基于GaSb、InAs衬底的各种器件结构的优缺点。分析结果表明，以InAs为衬底、吸收区材料为InAs/InAs1－xSbx、PB1IB2N型的结构为相对优化的器件结构设计，结合ZnS和Ge的多层膜结构设计或者重掺杂缓冲层，同时采用电感耦合等离子体（inductively coupled plasma）干法刻蚀工艺，该器件的50%截止波长可达12 μm，量子效率（quantum efficiency）可提升到65%以上，暗电流密度降低至1×10－5 A/cm2。并归纳总结了InAs/GaSb T2SLs长波红外探测器未来的发展趋势。
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关键词:
- InAs/GaSbⅡ类超晶格 /
- 器件结构 /
- 暗电流 /
- 量子效率 /
- 结构优化
Abstract: In this study, the research progress of long-wave infrared detectors based on InAs/GaSb type-Ⅱ superlattices (T2SLs) is systematically reported. The advantages and disadvantages of various device structures based on GaSb and InAs substrates are compared and analyzed from the perspective of substrate, material growth, and device performance. The results show that the structure of the device with InAs as the substrate, InAs/InAs1-xSbx as the absorber material, and PB1IB2N type is a relatively optimized design. Combining the multilayer structure design of ZnS and Ge, a heavy doping buffer layer, and the inductively coupled plasma (ICP) dry etching process, the 50% cutoff wavelength of the device can achieve 12 μm, the quantum efficiency (QE) can be increased to more than 65%, and the dark current density can be reduced to 1×10-5 A/cm2. Finally, the future development trend of InAs/GaSb T2SLs long-wave infrared detectors is summarized. -
图 1 基于GaSb的PIN结构器件示意图
Figure 1. Schematic diagram of the PIN structure GaSb-based device
图 2 基于GaSb的PB1IB2N结构的器件示意图及其能带结构图
Figure 2. Schematic diagram of the PB1IB2N structure GaSb-based device and its energy band structure alignment
图 3 基于GaSb的NBN结构器件示意图
Figure 3. Schematic diagram of the NBN structure GaSb-based device
图 4 具有NBN结构的探测器工作原理及能带结构示意图[16]：(a) NBN结构的探测器工作原理示意图；(b) NBN结构的探测器能带结构及有效带隙图
Figure 4. The energy band structure alignment and schematic diagram of working principle of the NBN detector[16]: (a) Schematic diagram of working principle for the NBN detector; (b) The band alignment and the creation of an effective band-gap for the NBN detector
图 5 基于InAs的PIN结构的器件示意图及其能带结构图
Figure 5. Schematic diagram of the PIN structure InAs-based device and its energy band structure alignment
图 6 基于InAs的N-on-P极性结构器件示意图
Figure 6. Schematic diagram of an N-on-P polar structure InAs-based device
图 7 高掺杂缓冲层的PBIBN结构器件示意图
Figure 7. Schematic diagram of a the PBIBN structure device with a highly doped buffer layer
表 1 不同结构的GaSb/InAs探测器性能参数对比
Table 1. Comparison of detector performance parameters of different structures
GaSb-substrate InAs-substrate Structure PIN PB1IB2N NBN PIN PB1IB2N Absorption layer material InAs/GaSb InAs/GaSb InAs/InAsSb InAs/InAsSb InAs/InAsSb Absorption layer parameter 13/7, 2.5 μm 15/7, 2.5 μm 28/7, 4 μm 20/9, 2.5 μm 22/9, 3.55 μm λc/μm 8 12.5 10 10 12.0 JD/(A/cm2) 4.3×10-5 1.1×10-3 4.4×10-4 4.01×10-5 1.7×10-5 R0A/Ωcm2 - 14.5 119 36.9 1.5×103 QE ＜15% 30% 54% 45% ＞60% D*/(cm·Hz1/2·W−1) - 1.4×1011 2.8×1011 7.4×1010 - 
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