EBAPS闪烁噪声测试系统

罗振华, 成帅, 钱芸生, 张益军

罗振华, 成帅, 钱芸生, 张益军. EBAPS闪烁噪声测试系统[J]. 红外技术, 2024, 46(10): 1130-1137.
引用本文: 罗振华, 成帅, 钱芸生, 张益军. EBAPS闪烁噪声测试系统[J]. 红外技术, 2024, 46(10): 1130-1137.
LUO Zhenhua, CHENG Shuai, QIAN Yunsheng, ZHANG Yijun. Flicker Noise Testing System of Electron Bombarded Active Pixel Sensor[J]. Infrared Technology , 2024, 46(10): 1130-1137.
Citation: LUO Zhenhua, CHENG Shuai, QIAN Yunsheng, ZHANG Yijun. Flicker Noise Testing System of Electron Bombarded Active Pixel Sensor[J]. Infrared Technology , 2024, 46(10): 1130-1137.

EBAPS闪烁噪声测试系统

基金项目: 

国家自然科学基金“叶企孙”科学基金项目 U2141239

详细信息
    作者简介:

    罗振华(1999-),男,硕士研究生,主要从事微光成像器件测试技术研究。E-mail:luozhenhua5@163.com

    通讯作者:

    钱芸生(1968-),男,博士,教授,博士生导师,主要从事微光与红外成像器件与系统及相关测试技术、原位测试与分析、光电测试、图像处理和仿真研究。E-mail:yshqian@mail.njust.edu.cn

  • 中图分类号: TN223

Flicker Noise Testing System of Electron Bombarded Active Pixel Sensor

  • 摘要:

    电子轰击有源像素传感器(electron bombarded active pixel sensor,EBAPS)是新型的真空-固体混合型数字微光夜视器件。闪烁噪声是影响EBAPS分辨力和成像质量的关键因素,然而,目前EBAPS闪烁噪声的测试研究不足。为此,本文首先开展EBAPS闪烁噪声测试方法研究,使用连通域检测算法筛选高亮噪点区域,提出异常像素点自适应中值替代的离散系数测试方法,在此基础上研制了EBAPS闪烁噪声测试系统,采用离散系数和高亮噪点数量作为闪烁噪声的表征参数,驱动EBAPS将不同测试条件下采集到的图像数据传输至上位机进行噪声处理与分析,测试结果表明:合适的测试照度为1.27×10-3 lx,高亮噪点数量在-1000~-1300 V范围内数量较少,-1300~-1500 V时高亮噪点数量则明显提升。离散系数和连通域数量重复度均在3%以内,验证了测试系统的稳定性,为国产EBAPS闪烁噪声测试提供有效手段。

    Abstract:

    An electron bombarded active pixel sensor (EBAPS) is a novel vacuum-solid, hybrid, digital, low-light night vision device. Flicker noise is a key factor affecting the resolution and image quality of EBAPS; however, there is currently insufficient research on the testing of flicker noise in EBAPS. Hence, this study conducted research on EBAPS flicker noise testing methods using connected domain detection algorithms to filter out high-brightness noise spot areas and proposed an adaptive, median replacement, discrete coefficient testing method for abnormal pixel points. Based on these results, an EBAPS flicker-noise testing system was developed using the discrete coefficient and number of bright noise spots as parameters to characterize the flicker noise. The system drives the EBAPS to transfer image data collected under different test conditions to an upper computer for noise processing and analysis. The test results indicate that the appropriate test illuminance is 1.27×10−3 lx. Moreover, the number of high-brightness noise spots is relatively low in the −1000−1300 V range, and it significantly increases when the voltage is between −1300−1500 V. The repeatability of the discrete coefficient and number of connected domains was within 3%, thus verifying the stability of the testing system and providing an effective means by which to test flicker noise in domestic EBAPS.

  • 图  1   EBAPS基本结构示意图

    Figure  1.   Basic structure diagram of EBAPS

    图  2   高亮噪点检测算法流程

    Figure  2.   Flowchart of high brightness noise detection algorithm

    图  3   异常像素点自适应中值替代的离散系数测试方法流程

    Figure  3.   Flowchart of discrete coefficient testing method for adaptive median substitution of abnormal pixel points

    图  4   EBAPS闪烁噪声测试系统结构原理

    Figure  4.   Schematic diagram of EBAPS flicker noise testing system structure

    图  5   EBAPS闪烁噪声测试系统实物

    Figure  5.   Photo of EBAPS flicker noise testing system

    图  6   闪烁噪声测试软件界面

    Figure  6.   Diagram of flicker noise test software interface

    图  7   不同轰击电压下6个照度的离散系数

    Figure  7.   Coefficient of variation of 6 illuminance levels under different bombardment voltages

    图  8   -800 V和-1000 V轰击电压下7个照度下的离散系数

    Figure  8.   Coefficient of variation at 7 illuminance levels under bombardment voltages of −800 V and −1000 V

    图  9   不同轰击电压下的离散系数热力图:(a) 电压为-1000 V;(b) 电压为-1100 V;(c) 电压为-1200 V;(d) 电压为-1300 V;(e) 电压为-1400 V;(f) 电压为-1500 V

    Figure  9.   Discrete coefficient thermodynamic diagram under different bombardment voltages (a)Voltage −1000 V; (b)Voltage −1100 V; (c)Voltage −1200 V; (d)Voltage −1300 V; (e)Voltage −1400 V; (f)Voltage −1500 V

    图  10   -1000 V~-1500 V下连续5次测得的离散系数曲线

    Figure  10.   Dispersion coefficient curves obtained for 5 consecutive measurements of −1000 to −1500 V

    表  1   -1000 V~-1500 V连通域数量

    Table  1   Number of connected domains from −1000 to −1500 V

    Bombardment voltage/V Number of tests Average value Repeatability/%
    1 2 3 4 5
    −1000 7.90 7.86 7.74 7.88 7.74 7.82 0.99
    −1100 7.56 8.00 8.10 7.72 7.90 7.86 2.76
    −1200 7.92 7.90 8.12 7.92 8.24 8.04 1.91
    −1300 11.94 12.18 12.10 12.52 12.26 12.20 1.75
    −1400 23.66 23.06 23.42 23.06 22.72 23.18 1.56
    −1500 42.90 42.62 41.34 42.88 40.88 42.12 2.25
    下载: 导出CSV
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出版历程
  • 收稿日期:  2023-10-19
  • 修回日期:  2023-11-20
  • 刊出日期:  2024-10-19

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