小像元10 μm中心距红外焦平面读出电路设计

吴圣娟; 姚立斌; 李东升; 姬玉龙; 杨春丽; 李红福; 罗敏; 李敏; 许睿涵

小像元10 μm中心距红外焦平面读出电路设计

昆明物理研究所, 云南昆明 650223

详细信息

作者简介:
吴圣娟(1984-),女,硕士研究生,主要研究方向：红外焦平面探测器读出电路设计。 E-mail：275099355@qq.com

通讯作者:
姚立斌(1968-),男,云南石屏人,研究员,博士,博士生导师,主要研究方向为混合信号集成电路设计。 E-mail： libin.yao@ieee.org

中图分类号: TN214
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- PDF下载量: 127
出版历程
- 收稿日期: 2021-07-25
- 修回日期: 2021-09-01
- 刊出日期: 2021-09-19

Small Pixel 10 μm Pitch Infrared Focal Plane Array ROIC Design

Kunming Institute of Physics, Kunming 650223, China

摘要

摘要: 研制出一款小像元10μm中心距红外焦平面探测器CMOS（complementary metal oxide semiconductor）读出电路ROIC（read out integrated circuit）。读出电路设计包括积分后读出（integration then reading，ITR）和积分同时读出（integration while reading，IWR）模式，ITR模式下有2档增益，电荷满阱容量分别为4.3 Me^-和1.6 Me^-，其他功能包括抗晕、串口功能控制以及全芯片电注入测试功能。读出电路采用0.18μm工艺，电源电压3.3 V，测试结果表现出良好的性能：在77 K条件下，全帧频100 Hz，读出电路噪声小于0.2 mV。本文介绍了该款读出电路设计的基本架构，分析了在小的积分电容下电路抗干扰能力的设计。在测试过程中，发现了盲元拖尾现象，分析了拖尾现象产生的原因，为解决拖尾现象设计了抗晕管栅压产生电路，最后给出了整个电路的测试结果。
- 小像元间距 /
- 读出电路 /
- 红外焦平面探测器
Abstract: A kind of infrared focal plane CMOS (complementary metal oxide semiconductor) read out integrated circuit (ROIC) for small pixel applications was developed. This ROIC design includes ITR(integration then reading) and IWR(integration while reading)functions, two gains in ITR mode, charge capacities are 4.3 Me^- and 1.6 Me^-. Other functions include anti-blooming, series port control function and full chip current injection test function. This ROIC was fabricated in 0.18μm process, power supply voltage 3.3 V, test result show good performance of the ROIC, full frame rate is 100 Hz, noise of readout circuit is 0.2 mV. This paper introduces the basic structure of the readout circuit design, and analyzes the design of anti-interference ability of the circuit under the condition of small integral capacitance; During the test, tailing phenomenon is found, the causes of the tailing phenomenon is analyzed and In order to solve the tailing phenomenon, the Anti-blooming voltage generation circuit is designed, and the test results of the whole circuit are given at the end of the paper.
- small pixel /
- ROIC /
- infrared focal plane detector

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图 1 读出电路结构示意图

Figure 1. Schematic diagram of readout circuit structure

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图 2 模拟链路设计原理图

Figure 2. Schematic diagram of analog design

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图 3 IWR模式像元开关时序图

Figure 3. Sequence diagram of IWR mode pixel switch

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图 4 ITR模式像元开关时序图

Figure 4. Sequence diagram of ITR mode pixel switch

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图 5 保持电容与开关连接图

Figure 5. Connection diagram of holding capacitor and switch

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图 6 像元总线

Figure 6. Pixel bus

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图 7 行选开关位置1

Figure 7. Location 1 of row selection switch

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图 8 行选开关位置2

Figure 8. Location 2 of row selection switch

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图 9 列总线仿真原理图

Figure 9. Schematic diagram of column bus simulation

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图 10 馈通效应仿真时序

Figure 10. Feed through effect simulation timing

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图 11 亮盲元拖尾现象

Figure 11. Bright blind element tailing phenomenon

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图 12 拖尾现象分析

Figure 12. Analysis of tailing phenomenon

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图 13 抗晕管栅极电压设计示意图

Figure 13. Schematic diagram of antiblooming voltage design

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图 14 抗晕管电压产生电路

Figure 14. Antiblooming voltage generation circuit

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图 15 小像元探测器组件成像图

Figure 15. Imaging of small pixel detector assembly

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表 1 法国Sofradir公司推出的Daphnis产品信息

Table 1 Daphnis product information by Sofradir

Detector spectral response	3.7-4.8 μm
FPA operating temperature	Up to 110 K
ROIC architecture	Digital outputs Direct injection input circuit
ROIC functionalities	Programmable integration time anti-blooming Invertrevert Bining IWR or ITR High dynamic range
Windowing modes	320×4 minimum programmable
Charge handling capacity	3main Gains: 1.1Me^-; 2.7Me^-; 5.6Me-
Frame rate	Up to 85 Hz full frame rate
NETD	20 mK(293 K, 70% well fill, 2.7Me^-)

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表 2 读出电路主要性能参数

Table 2 Main performance parameters of readout circuit

Parameters	Typical value
Array	1024×768
Pixel pitch	10μm
Main clock	10 MHz
Charge capacity	Gain1：4.3 Me^-
Charge capacity	Gain0：1.6Me^-
Output channel	8
Output voltage swing	2 V(1-3 V)
Readout mode	ITR/IWR

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表 3 沟道电荷注入效应引起的电压变化

Table 3 Voltage change caused by channel charge injection effect

C/fF	ΔV/mV
800	7.925
400	15.85
200	31.7
100	63.4
50	126.8
10	634

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表 4 列放大器对保持电容影响

Table 4 Effect of column amplifier on holding capacitance

C/fF	ΔV/mV	ΔV'/mV
10	629.77	21.75
40	347.35	8.32
80	204.18	2.26
100	165.81	1.91
400	43.42	0.56
800	21.88	0.29

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表 5 读出电路测试结果

Table 5 Read out circuit test result

IWR/ITR function	Normal
Window mode test	Normal
Serial electrical interface	Normal
Output voltage swing	2 V
Power dissipation	150 mW
Output bandwidth	10 MHz
Frame rate	100 Hz
Noise	0.2 mV

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参考文献(25)

[1]	杨超伟, 李东升, 李立华, 等. 小像元碲镉汞红外焦平面探测器的研究进展[J]. 红外技术, 2019, 41(11): 1003-1011. https://www.cnki.com.cn/Article/CJFDTOTAL-HWJS201911003.htm YANG Chaowei, LI Dongsheng, LI Lihua, et al. Review of small-pixel HgCdTe infrared focal plane detector[J]. Infrared Technology, 2019, 41(11): 1003-1011. https://www.cnki.com.cn/Article/CJFDTOTAL-HWJS201911003.htm
[2]	李俊斌, 李东升, 杨玉林, 等. 以色列SCD公司的III-Ⅴ族红外探测器研究进展[J]. 红外技术, 2018, 40(10): 936-945. http://hwjs.nvir.cn/article/id/hwjs201810003 LI Junbin, LI Dongsheng, YANG Yulin, et al. III-V semiconductor infrared detector research in SCD of Israel[J]. Infrared Technology, 2018, 40(10): 936-945. http://hwjs.nvir.cn/article/id/hwjs201810003
[3]	邓功荣, 赵鹏, 袁俊, 等. 锑基高工作温度红外探测器研究进展[J]. 红外技术, 2017, 39(9): 780-784. http://hwjs.nvir.cn/article/id/hwjs201709002 DENG Gongrong, ZHAO Peng, YUAN Jun, et al. Status of Sb-based HOT infrared detectors[J]. Infrared Technology, 2017, 39(9): 780-784. http://hwjs.nvir.cn/article/id/hwjs201709002
[4]	Beletic J W, Blank R, Gulbransen D, et al. Teledyne imaging sensors: infrared imaging technologies for astronomy and civil space[C]//High Energy, Optical, and Infrared Detectors for Astronomy III, 2008, 7021: 70210H.
[5]	Rogalski A. Recent progress in infrared detector technologies[J]. Infrared Physics & Technology, 2011, 54(3): 136-154. http://www.researchgate.net/profile/Antoni_Rogalski/publication/241112884_Recent_progress_in_HgCdTe_infrared_detector_technology/links/5524e12e0cf22e181e73b04e.pdf
[6]	Rogalski A. Next decade in infrared detectors[C]//Electro-Optical and Infrared Systems: Technology and Applications XIV, 2017, 10433: 104330L.
[7]	Caulfield J, Curzan J. Small pixel infrared sensor technology[C]//Infrared Technology and Applications XLIII, 2017, 10177: 1017725.
[8]	Chen T, Catrysse P B, El Gamal A, et al. How small should pixel size be?[C]//Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications, 2000, 3965: 451-459.
[9]	Farrell J, Xiao F, Kavusi S. Resolution and light sensitivity tradeoff with pixel size[C]//Digital Photography II, 2006, 6069: 60690N.
[10]	Lutz H, Breiter R, Eich D, et al. Small pixel pitch MCT IR-modules[C]//Infrared Technology and Applications XLII, 2016, 9819: 98191Y.
[11]	Lutz H, Breiter R, Eich D, et al. Towards ultra-small pixel pitch cooled MW and LW IR-modules[C]//Infrared Technology and Applications XLIV, 2018, 10624: 106240B.
[12]	Espuno L, Pacaud O, Reibel Y, et al. A new generation of small pixel pitch/SWaP cooled infrared detectors[C]//Electro-Optical and Infrared Systems: Technology and Applications XII, 2015: 9648: 96480H.
[13]	Manissadjian A, Rubaldo L, Rebeil Y, et al. Improved IR detectors to swap heavy systems for SWaP[C]//Infrared Technology and Applications XXXVIII, 2012, 8353: 835334.
[14]	Johnson John. Analysis of image forming systems[C]//Proceeding of SPIE- The International Society for Optical Engineering, 1958, 513(513) : 761.
[15]	周立庆, 宁提, 张敏, 等. 10 µm像元间距1024×1024中波红外探测器研制进展[J]. 激光与红外, 2019, 49(8): 915-920. https://www.cnki.com.cn/Article/CJFDTOTAL-JGHW201908002.htm ZHOU L, NING T, ZHANG M, et al. Developments of 10 µm pixel pitch 1024×1024 MW infrared detectors[J]. Laser & Infrared, 2019, 49(8): 915-920. https://www.cnki.com.cn/Article/CJFDTOTAL-JGHW201908002.htm
[16]	Berthoz J, Rubaldo L, Maillard M, et al. MTF performance: measurements, modelisation, and optimization for Sofradir II-VI IR photodetectors[C]//Quantum Sensing and Nanophotonic Devices XII, 2015, 9370: 93700O.
[17]	Reibel Y, Augey T, Verdet S, et al. High-performance and long-range cooled IR technologies in France[C]//Infrared Technology and Applications XXXIX, 2013, 8704: 87040B.
[18]	Reibel Y, Rubaldo L, Manissadjian A, et al. High-performance MCT and QWIP IR detectors at Sofradir[C]//Electro-Optical and Infrared Systems: Technology and Applications IX, 2012, 8541: 85410A.
[19]	Reibel Y, Rouvie A, Nedelcu A, et al. Large format, small pixel pitch and hot detectors at SOFRADIR[C]//Electro-Optical and Infrared Systems: Technology and Applications X, 2013, 8896: 88960B.
[20]	Lefoul X, Pere-Laperne N, Augey T, et al. New SOFRADIR 10 µm pixel pitch infrared products[C]//Electro-Optical and Infrared Systems: Technology and Applications XI, 2014, 9249: 924911.
[21]	Tan C L, Mohseni H. Emerging technologies for high performance infrared detectors[J]. Nanophotonics, 2018, 7(1): 169-197. http://www.onacademic.com/detail/journal_1000040103679310_e3b6.html
[22]	Beletic J W, Blank R, Gulbransen D, et al. Teledyne imaging sensors: infrared imaging technologies for astronomy and civil space[C]//High Energy, Optical, and Infrared Detectors for Astronomy III, 2008: 70210H.
[23]	Dorn R J, Eschbaumer S, Hall D N, et al. Evaluation of the Teledyne SIDECAR ASIC at cryogenic temperature using a visible hybrid H2RG focal plane array in 32 channel readout mode[C/]//Proc. of SPIE, 2008: DOI:10.1117/12.788717.
[24]	Bai Y, Bajaj J, Beletic J W, et al. Teledyne imaging sensors: silicon CMOS imaging technologies for x-ray, UV, visible, and near infrared[C]//Proc. of SPIE, 2008, 7021: 702102.
[25]	毕查德·拉扎维. 模拟CMOS集成电路设计[M]. 西安: 西安交通大学出版社, 2003. Behzad Razavi. Design of Analog CMOS Integrated Circuits[M]. Xi'an: Xi'an JiaoTong University Press, 2003.