紫外增强图像传感器的研究进展

罗磊; 唐利斌; 左文彬

紫外增强图像传感器的研究进展

罗磊^{1, 2, 3},
唐利斌^{1, 3, ,},
左文彬^{1, 3}

1.
昆明物理研究所，云南昆明 650223
2.
云南大学材料与能源学院，云南昆明 650500
3.
云南省先进光电材料与器件重点实验室，云南昆明 650223

基金项目:

国家重点研发计划 2019YFB2203404

云南省创新团队项目 2018HC020

详细信息

作者简介:
罗磊（1997-），男，硕士研究生，研究方向是紫外增强CMOS图像传感器

通讯作者:
唐利斌（1978-），男，研究员级高级工程师，博士生导师，主要从事光电材料与器件的研究。E-mail: sscitang@163.com

中图分类号: TN204
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- 文章访问数: 351
- HTML全文浏览量: 204
- PDF下载量: 165
- 被引次数: 0
出版历程
- 收稿日期: 2021-11-10
- 修回日期: 2021-11-13
- 刊出日期: 2021-11-20

Research Progress in Ultraviolet Enhanced Image Sensors

LUO Lei^{1, 2, 3},
TANG Libin^{1, 3
, ,},
ZUO Wenbin^{1, 3}

1.
Kunming Institute of Physics, Kunming 650223, China
2.
School of Materials and Energy, Yunnan University, Kunming 650500, China
3.
Yunnan Key Laboratory of Advanced Photoelectric Materials and Devices, Kunming 650223, China

摘要

摘要: 近年来图像传感器在紫外成像的应用越来越广泛，尤其是以CCD（charge coupled device）和CMOS（complementary metal oxide semiconductor）为主的紫外图像传感器受到了研究人员的广泛关注。半导体技术的进步和纳米材料的发展进一步推动了紫外图像传感器的研究。本文综述了国内外紫外增强图像传感器的研究进展，介绍了几种增强器件紫外响应的材料，另外还简要概述了紫外图像传感器在生化分析、大气监测、天文探测等方面的应用，并讨论了CCD/CMOS图像传感器在紫外探测方面所面临的挑战。
- 紫外增强 /
- CMOS图像传感器 /
- CCD
Abstract: In recent years, image sensors are more and more widely used in ultraviolet imaging, especially the ultraviolet image sensors based on CCD and CMOS have attracted intensive attention of researchers. The progress of semiconductor technology and the development of nanomaterials further promote the research of ultraviolet image sensor. In this review, the research progress of ultraviolet enhanced image sensor at home and abroad is reviewed, and several materials enhancing the ultraviolet response of the device are introduced. In addition, the applications of ultraviolet image sensor in biochemical analysis, atmospheric monitoring and astronomical detection are briefly summarized, and the challenges faced by CCD/CMOS image sensors in ultraviolet detection are discussed.
- ultraviolet enhancement /
- CMOS image sensor /
- CCD

HTML全文

图 1 图像传感器工作原理和结构示意图：(a)，(b)，(c)和(d)分别为CCD、CMOS、前照式图像传感器结构和背照式图像传感器结构^[12]；(e) 堆栈式CMOS图像传感器；(f) 具有Cu-Cu杂化键合的新型堆栈式背照CMOS图像传感器及器件截面图^[13]

Figure 1. Schematic diagrams of imaging sensor working principles and structures: (a), (b), (c) and (d) are CCD, CMOS, structure of front-illuminated image sensor cross-section, and structure of back-illuminated image sensor cross-section, respectively^[12]; (e) Stacked CMOS image sensor; (f) New stacked BI-CIS with Cu-Cu hybrid bonding and cross-sectional view of the device^[13]

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图 2 有机、无机稀土掺杂化合物增强紫外图像传感器：(a) Lumogen结构；(b) Lumogen薄膜紫外-可见吸收光谱^[37]；(c) 镀膜前(i)和镀膜后(ii)的CCD汞灯谱线^[40]；(d) 不同方法制备的晕苯薄膜的反射和透射光谱图^[42]；(e) 不同膜层厚度下的CMOS图像传感器在紫外波段范围内的量子效率^[44]；(f) LiSr_(1-3x/2)VO₄: xTb³⁺的荧光激发和发射光谱^[45]

Figure 2. Ultraviolet image sensor enhanced by organic and inorganic rare earth doped compounds: (a) Structure of Lumogen; (b) UV-vis absorption spectrum of Lumogen film^[37]; (c) CCD mercury lamp spectra before (i)and after(ii) coating^[40]; (d) Reflectance and transmittance spectra of Coronene film prepared by different methods^[42]; (e)Quantum efficiency of CMOS image sensors in the ultraviolet band rang with different film thickness^[44]; (f) Photoluminescence excitation and emission spectra of LiSr_(1-3x/2)VO₄: xTb³⁺^[45]

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图 3 量子点增强紫外CMOS器件：(a) 纳米复合薄膜在紫外光和可见光照射下的示意图^[57]；(b) CdSe/ZnS量子点和硅基量子点纳米复合物的吸收和荧光光谱图^[58]；(c) 在可见光(i)和紫外光(ii)照射下的量子点涂层CID86器件^[59]；(d) CdSe/ZnS量子点示意图；(e) 不同膜层的CdSe/ZnS量子点薄膜的荧光发射光谱^[61]；(f) 量子点涂覆器件的结构图^[60]

Figure 3. Quantum dot enhanced UV CMOS devices: (a) A schematic representation of the nanocomposites film illuminated by UV and visible light^[57]; (b) Absorption and PL spectra of CdSe/ZnS QDs and QD/silica nanocomposites^[58]; (c) Photoes of CID86 devicecoated by QD under visible (i) and UV (ii) light illumination^[59]; (d) Diagram of CdSe/ZnS quantum dot; (e) PL emission spectra of CdSe/ZnS QD films with different layers^[61]; (f) Schematic of a QD coated device^[60]

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图 4 钙钛矿量子点增强紫外CCD器件：(a) 钙钛矿结构示意图；(b) CsPbX₃胶体量子点溶液的荧光成像图和相应的荧光光谱^[62]；(c) MAPbBr₃量子点的紫外-可见吸收光谱和透射电镜图像^[66]；(d) PQDCF紫外增强硅光电二极管结构示意图；(e) PQDCF旋涂前后的EMCCD成像传感器的外量子效率；(f) PQDCF的荧光光谱及在室内日光（上）和365 nm紫外灯下（下）的照片^[68]

Figure 4. Perovskite quantum dots enhanced ultraviolet CCD devices: (a) Structure diagram of perovskite; (b) Photoes of CsPbX₃ colloidal QDs solutions and corresponding PL spectra^[61]; (c) UV-Vis absorption spectra and TEM image of MAPbBr₃ QDs^[65]; (d) Structure diagram of the PQDCF UV enhanced EMCCD; (e) The EQE of EMCCD image sensor before and after coating PQDCF, (f) PL spectrum of PQDCF with the corresponding photographs under ambient daylight (up) and under a 365 nm UV lamp (down) shown in inset^[67]

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图 5 图像传感器在紫外成像方面的应用：(a) 盐酸二甲双胍可见透射和紫外吸收图像^[4]；(b) 片剂的可见光和紫外图像^[69]；(c)电站烟囱校准后的SO₂图像^[70]；(d) 高分辨率极紫外相机模型^[72]；(e) 哈勃望远镜第三代相机的CCD探测器封装图^[71]；(f) SUIT所有子系统的有效载荷^[73]

Figure 5. Applications of image sensor in ultraviolet imaging: (a) UV and visible absorbance maps obtained for Glucophage SR^[4]; (b) Visible and ultraviolet images of tablets^[69]; (c) The resulting calibrated SO₂ image of Drax power station stack^[70]; (d) HRI_EUV camera flight model^[72]; (e) Peckaging image of CCD detector of Hubble telescope third generation camera^[71]; (f) SUIT (Solar Ultraviolet Imaging Telescope) payload with all the subsystems^[73]

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表 1 CMOS与CCD图像传感器参数对比

Table 1. Comparison of CMOS and CCD image sensor parameters

Parameter	CMOS	CCD
Signal to noise ratio	Low	High
Sensitivity	High	Higher
Size	Small	Large
Power consumption	High to mode rate	High
System complexity	Low	High
Cost	Low	High
Signal from pixel	Voltage	Electron packet
Signal from chip	Bits（digital）	Analog voltage

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表 2 紫外增强CMOS/CCD图像传感器

Table 2. UV-enhanced CMOS/CCD image sensor

Year	Sensor	QE	Wavelength range	Number of pixels	Ref.
1987	CCD	22%@250 nm	10-300 nm	-	[14]
1997	CCD	50%	200-400 nm	-	[15]
2007	CMOS	15%@300 nm	300 nm	4k×3k	[16-17]
2008	CCD	45%@400 nm	250-900 nm	1k×1k	[18]
2009	CMOS	52%@400 nm	400-1000 nm	-	[19]
2012	CCD	50%	180-200 nm	1024×512	[20]
2012	CMOS	50%	5-20 nm	1k×1k	[21]
2013	CMOS	-	200-1000 nm	-	[22]
2014	CMOS	-	-	3k×3k	[23]
2015	CMOS		190-1000 nm	1k×1k	[24]
2016	EMCCD	80%@205 nm	170-320 nm	1k×2k	[25]
2016	CMOS	-	200-1100 nm	-	[26]
2019	CMOS	46%@300 nm	190-1000 nm	-	[27]
2019	CMOS	-	200-1000 nm	640×480	[28]

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