Abstract: To meet with the ongoing demand for high uniformity, low dark current and low-blind pixels of linear InGaAs short-wavelength-infrared focal plane detector in color separation industry, based on MOCVD-grown n-i-n type InP/InGaAs/InP epitaxial materials, a 512×2-element linear InGaAs short-wavelength-infrared focal plane detector was fabricated using diffusion techniques, preparation of the passivation layer, and growth of the electrode. The dark current of this detector was effectively suppressed by optimizing the structure of the detector and the passivation layer technique, Moreover, high reliability and low-blind pixels were achieved by optimizing the parameters of flip-chip interconnection. The detector assembly was tested. The measurement results show a peak detectivity of 1.13×10¹² cm⋅Hz^1/2/W, dark current density of 12.8 nA/cm², effective pixel rate higher than 99.5%, and response non-uniformity as low as 0.63% at room temperature (25℃).