Abstract: For high-speed imaging framing cameras, nanosecond-level time resolution can be achieved using a photocathode gating module to control the image intensifier photocathode. Traditional modules have some problems, such as slow switching speed, exclusively negative voltage output, and positive or negative voltage outputs that cannot reach the full amplitude. Based on the CMOS push-pull output structure and voltage level transfer circuit, a photocathode gating module was designed, which could use a low-side driver driving PMOS and NMOS. Dead-time control was used to avoid cross conduction of the upper and lower MOSFETs. The actual test results verified that this module has the advantages of simple structure and reliable performance; moreover, the ns level rising or falling edge, adjustable duty ratio 0 to 100%, and +30 to -200 V pulse output amplitude were realized. This module was found to be suitable for gating the photocathode of the image intensifier.