超长线列红外探测器拼接结构

杨小乐; 周峰; 史漫丽; 刘伟; 刘彦杰; 刘义良

超长线列红外探测器拼接结构

1.
北京空间机电研究所, 北京 100011
2.
华北光电技术研究所, 北京 100011
3.
中国科学院理化技术研究所, 北京 100011

详细信息

作者简介:
杨小乐（1984-），男，硕士，高级工程师，主要从事红外遥感器设计研究，E-mail：274861918@qq.com

中图分类号: TN215
计量
- 文章访问数: 231
- HTML全文浏览量: 69
- PDF下载量: 91
出版历程
- 收稿日期: 2023-03-30
- 修回日期: 2023-04-18
- 刊出日期: 2023-06-19

Splicing Structure of Ultra-long Linear Infrared Detector

1.
Beijing Institute of Space Mechanics & Electricity, Beijing 100011, China
2.
North China Institute of Optoelectronic Technology, Beijing 100011, China
3.
Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100011, China

摘要

摘要: 随着红外遥感技术的发展，航天各类应用对红外探测器阵列规模的需求已经超出了目前单模块探测器研制极限，需要通过光学或者机械拼接方法解决该问题。结合国内外先进的机械拼接技术，针对8模块超长线列拼接红外探测器研制，本文提出了拼接结构的4个设计要点和对探测器成像的影响，结合设计要点详细介绍拼接结构具体设计过程以及设计结果，最后给出拼接结构的测试方法以及一种非接触的平面度测试方法和测试结果。
- 红外探测器 /
- 机械拼接 /
- 线列探测器 /
- 平面度
Abstract: With the development of infrared remote sensing technology, the demand for infrared detector arrays in various aerospace applications has exceeded the current developmental limit of single-module detectors. This problem needs to be solved by optical or mechanical splicing methods. Based on an advanced mechanical splicing technology, this study presents four design points of splicing structure and their influence on detector imaging for the development of an 8-module ultra-long linear splicing infrared detector. The specific design process of the design points and design results of the splicing structure are introduced in detail. The method for testing a splicing structure and a non-contact flatness test method are described; the test results are presented.
- infrared detector /
- mechanical splicing /
- linear detector /
- flatness

HTML全文

图 1 2k×2k InSb单模块封装探测器^[3]

Figure 1. 2k×2k InSb single module packaged detector^[3]

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图 2 4k×4k InSb拼接探测器^[3]

Figure 2. 4k×4k InSb splicing detector^[3]

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图 3 4k×4k碲镉汞拼接探测器^[4-5]

Figure 3. 4k×4k MCT splicing detector^[4-5]

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图 4 5×7碲镉汞拼接大面阵探测器^[4-5]

Figure 4. 5×7 MCT large area array splicing detector^[4-5]

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图 5 2048×16拼接探测器^[6]

Figure 5. 2048×16 splicing detector^[6]

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图 6 中电11所研制的多谱段集成TDI线列红外探测器^[7-9]

Figure 6. Multi band integrated TDI line array infrared detector developed by 11th Institute of CETC

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图 7 探测器拼接排列示意图

Figure 7. Schematic diagram of detector splicing arrangement

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图 8 探测器冷箱封装结构

Figure 8. Detector cold box packaging structure

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图 9 探测器拼接结构

Figure 9. Detector splicing structure

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图 10 8模块探测器拼接版图示意图

Figure 10. Schematic diagram of 8-module detector splicing layout

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图 11 制冷机冷指与冷板

Figure 11. Refrigerator cold finger and cold plate

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图 12 有限元模型

Figure 12. Finite element model

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图 13 芯片法向变形（殷钢热膨胀系数为4.6e-6）

Figure 13. Chip normal deformation(Thermal expansion coefficient of Invar is 4.6e-6)

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图 14 芯片应力云图（殷钢热膨胀系数为4.6e-6）

Figure 14. Chip stress cloud map(Thermal expansion coefficient of is Invar 4.6e-6)

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图 15 低温平面度测试系统原理

Figure 15. Principle of low temperature flatness testing system

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图 16 拼接基板上标识

Figure 16. Identification on splicing substrate

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图 17 拼接系统的测试

Figure 17. Testing of splicing system

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图 18 低温平面度实测结果

Figure 18. Low temperature flatness measurement results

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表 1 两种机械拼接形式对比

Table 1 Comparison of two mechanical splicing forms

	Component level	Chip level
Application	Array device	Linear device
Electric-heating interface	Independent	Shared
Imaging impact	Seams	No seams
Volume and weight	Large and weight	Small and light
Maintainability	Easily replaceable	Not easily replaceable
Scalability	Easy	Not easy

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表 2 不同殷钢热膨胀系数对应的最大应力

Table 2 Maximum stress corresponding to different thermal expansion coefficients of Invar

Thermal expansion coefficient	4.2e-6	4.4e-6	4.6e-6	4.8e-6	Maximum allowed value
Chip/MPa	95.1	93.2	91.6	90.4	100
Multilayer ceramics/MPa	36.4	35.9	35.9	36.5	100
Filter/MPa	95.1	96.7	97.9	98.9	130

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