小像元10 μm中心距红外焦平面读出电路设计

Small Pixel 10 μm Pitch Infrared Focal Plane Array ROIC Design

  • 摘要: 研制出一款小像元10μm中心距红外焦平面探测器CMOS(complementary metal oxide semiconductor)读出电路ROIC(read out integrated circuit)。读出电路设计包括积分后读出(integration then reading,ITR)和积分同时读出(integration while reading,IWR)模式,ITR模式下有2档增益,电荷满阱容量分别为4.3 Me-和1.6 Me-,其他功能包括抗晕、串口功能控制以及全芯片电注入测试功能。读出电路采用0.18μm工艺,电源电压3.3 V,测试结果表现出良好的性能:在77 K条件下,全帧频100 Hz,读出电路噪声小于0.2 mV。本文介绍了该款读出电路设计的基本架构,分析了在小的积分电容下电路抗干扰能力的设计。在测试过程中,发现了盲元拖尾现象,分析了拖尾现象产生的原因,为解决拖尾现象设计了抗晕管栅压产生电路,最后给出了整个电路的测试结果。

     

    Abstract: A kind of infrared focal plane CMOS (complementary metal oxide semiconductor) read out integrated circuit (ROIC) for small pixel applications was developed. This ROIC design includes ITR(integration then reading) and IWR(integration while reading)functions, two gains in ITR mode, charge capacities are 4.3 Me- and 1.6 Me-. Other functions include anti-blooming, series port control function and full chip current injection test function. This ROIC was fabricated in 0.18μm process, power supply voltage 3.3 V, test result show good performance of the ROIC, full frame rate is 100 Hz, noise of readout circuit is 0.2 mV. This paper introduces the basic structure of the readout circuit design, and analyzes the design of anti-interference ability of the circuit under the condition of small integral capacitance; During the test, tailing phenomenon is found, the causes of the tailing phenomenon is analyzed and In order to solve the tailing phenomenon, the Anti-blooming voltage generation circuit is designed, and the test results of the whole circuit are given at the end of the paper.

     

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