Abstract: To achieve temperature testing of materials at different temperatures, we rely on the advantages of laser heating, such as precise temperature control, fast heating rate, and high heating temperature, combined with the technical characteristics of real-time monitoring by infrared thermal imaging systems, to achieve real-time and precise determination of the thermal equilibrium state of materials during laser heating. Crystalline silicon (C-Si) is used for heating as a material that is resistant to high temperature, and the laser output power is set. The positions of the thermal imaging system and heating material are fixed, and the temperature changes in the surface area of the material during heating are collected in real time. The collected images are analyzed for characteristics such as the area of the hot zone, mean and maximum temperatures of the zone, and uniformity and compactness of the zone temperature, to determine whether the heating state has reached thermal equilibrium. In experiments, the area of the hot zone and the mean and maximum temperatures of the zone all show rapid growth trends, whereas uniformity and compactness of the zone temperature gradually decreases. As the system approaches thermal equilibrium, all characteristic values reach a stable state, indicating that material heating has reached thermal equilibrium. This method allows for the real-time determination of the state of materials during laser heating.