Abstract: In this study, InSb wafers were subjected to pure mechanical polishing and chemical mechanical polishing using hydrogen peroxide. The surface quality of the wafers polished using these methods was investigated by characterizing the surface scratch, surface roughness, and surface damage and verifying if an oxide film was formed on the wafer surface. The results showed that an oxide layer was formed on the wafer surface during mechanical polishing. This layer protects the material surface from damage. Moreover, chemical mechanical polishing using hydrogen peroxide as the polishing solution facilitated the formation of InSb wafers with good surface quality. The surface roughness was reduced to 0.606 nm, the flatness was about 6.916 nm, and the damage was significantly reduced.