Study on Dual-Fluid Spray Cleaning Technique for Single-wafer Particle Removal
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摘要: 研究了气液混合流清洗方法对单片晶圆表面颗粒的去除效果，引入无量纲参数移径比（H/D）讨论其对单片晶圆表面颗粒去除效率的影响。此外，还讨论了冲洗时间、冲洗压力对颗粒去除效率的影响。结果表明：晶圆表面颗粒去除效率随着冲洗时间、冲洗压力的增大而提高。移径比为1时晶圆表面颗粒去除效率最高；当移径比小于1时，晶圆表面颗粒去除效率随移径比增大而提高；当移径比大于1时，晶圆表面开始出现未被冲洗的区域，颗粒去除效率随移径比增大而迅速降低。采用气液混合流清洗技术，可以实现颗粒直径为0.2~0.3 μm范围的颗粒去除效率达99%以上，颗粒直径为0.1~0.5 μm范围的颗粒去除效率达96%以上。Abstract: The particle removal efficiency (PRE) of single-wafer substrates using dual-fluid spray-cleaning technology was investigated. The ratio displacement-diameter(H/D), which is dimensionless, is introduced to discuss the effect of PRE on a single-wafer surface. In addition, the effects of spray time and nozzle injection pressure on PRE are discussed. The results show that increasing the spray time and nozzle injection pressure can increase PRE. The highest PRE occurred when the displacement-diameter ratio was close to 1. When the ratio was less than 1, the PRE increased with an increase in the displacement–diameter ratio. When the ratio was greater than 1, the partial area of the wafer surface was not washed, and the PRE decreased rapidly with an increase in the ratio. The dual-fluid spray-cleaning method can achieve more than 99% PRE for particle sizes between 0.2 μm and 0.3 μm and more than 96% PRE for particle sizes between 0.1 μm and 0.5 μm.
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图 2 清洗前后晶圆表面颗粒测试分布
Figure 2. The particle distribution on the wafer surface was measured before and after cleaning
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图 3 清洗时间对颗粒去除效率的影响
Figure 3. The effects of spray time on the particle removal efficiency
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图 4 移径比对颗粒去除效率的影响
Figure 4. The effects of displacement-diameter ratio on the particle removal efficiency
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图 5 冲洗压力对颗粒去除效率的影响
Figure 5. The effects of nozzle injection pressure on the particle removal efficiency
表 1 样品实验条件
Table 1 Experimental condition of samples
Sample Spray time(nT) Displacement diameter ratio(H/D) Injection pressure/(Psi) a 1T 0.2 40 b 2T 0.2 40 c 3T 0.2 40 d 4T 0.2 40 e 4T 0.5 40 f 4T 1 40 g 4T 2 40 h 4T 0.2 20 i 4T 0.2 30 j 4T 0.2 50 
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