Study on Dual-Fluid Spray Cleaning Technique for Single-wafer Particle Removal
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摘要: 研究了气液混合流清洗方法对单片晶圆表面颗粒的去除效果，引入无量纲参数移径比（H/D）讨论其对单片晶圆表面颗粒去除效率的影响。此外，还讨论了冲洗时间、冲洗压力对颗粒去除效率的影响。结果表明：晶圆表面颗粒去除效率随着冲洗时间、冲洗压力的增大而提高。移径比为1时晶圆表面颗粒去除效率最高；当移径比小于1时，晶圆表面颗粒去除效率随移径比增大而提高；当移径比大于1时，晶圆表面开始出现未被冲洗的区域，颗粒去除效率随移径比增大而迅速降低。采用气液混合流清洗技术，可以实现颗粒直径为0.2~0.3 μm范围的颗粒去除效率达99%以上，颗粒直径为0.1~0.5 μm范围的颗粒去除效率达96%以上。Abstract: The particle removal efficiency (PRE) of single-wafer substrates using dual-fluid spray-cleaning technology was investigated. The ratio displacement-diameter(H/D), which is dimensionless, is introduced to discuss the effect of PRE on a single-wafer surface. In addition, the effects of spray time and nozzle injection pressure on PRE are discussed. The results show that increasing the spray time and nozzle injection pressure can increase PRE. The highest PRE occurred when the displacement-diameter ratio was close to 1. When the ratio was less than 1, the PRE increased with an increase in the displacement–diameter ratio. When the ratio was greater than 1, the partial area of the wafer surface was not washed, and the PRE decreased rapidly with an increase in the ratio. The dual-fluid spray-cleaning method can achieve more than 99% PRE for particle sizes between 0.2 μm and 0.3 μm and more than 96% PRE for particle sizes between 0.1 μm and 0.5 μm.
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低照度成像技术是解决低光照（具体指0.1 lux以下）环境获取视频图像的技术。按照是否包含真空系统，低照度成像器件主要分为三类：第一类是利用外光电效应的真空光电子成像器件，比如基于多碱材料体系的超二代微光像增强器、基于GaAs材料体系的三代微光像增强器；第二类是利用内光电效应的固体成像器件，比如基于硅材料体系的电子倍增CCD（EMCCD）/CMOS（EMCMOS）和低照度CMOS成像器件、基于Ⅲ-Ⅴ族InP/InGaAs材料体系的短波红外InGaAs探测器等；第三类是结合真空和固体器件优势的混合型成像器件，如电子轰击CCD（EBCCD）、电子轰击有源像素CMOS器件的EBAPS。为促进我国低照度成像技术尤其是新一代昼夜通用高灵敏度图像传感器EBAPS的发展，2024年10期，《红外技术》推出了“低照度成像技术”专栏，共收录6篇学术论文，其中2篇文章以EBAPS为主题，1篇综述了EBAPS的研究进展，另1篇提出连通域检测算法筛选高亮噪点区域和异常像素点自适应中值替代的离散系数测试方法并研制了EBAPS闪烁噪声系统；与此形成对照的是1篇微光像增强器的闪烁噪声测试方法，结合了离散系数与Harris角点检测；1篇片上集成偏振单元的EMCCD器件，还有2篇聚焦于低照度图像处理方法。专栏旨在为我国相关科研人员和广大读者提供学术参考，为低照度成像技术的创新发展提供一些新思路和新手段。
最后，感谢各位审稿专家和编辑的辛勤工作。
——王岭雪 -
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图 2 清洗前后晶圆表面颗粒测试分布
Figure 2. The particle distribution on the wafer surface was measured before and after cleaning
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图 3 清洗时间对颗粒去除效率的影响
Figure 3. The effects of spray time on the particle removal efficiency
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图 4 移径比对颗粒去除效率的影响
Figure 4. The effects of displacement-diameter ratio on the particle removal efficiency
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图 5 冲洗压力对颗粒去除效率的影响
Figure 5. The effects of nozzle injection pressure on the particle removal efficiency
表 1 样品实验条件
Table 1 Experimental condition of samples
Sample Spray time(nT) Displacement diameter ratio(H/D) Injection pressure/(Psi) a 1T 0.2 40 b 2T 0.2 40 c 3T 0.2 40 d 4T 0.2 40 e 4T 0.5 40 f 4T 1 40 g 4T 2 40 h 4T 0.2 20 i 4T 0.2 30 j 4T 0.2 50 
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