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陈凤金, 司俊杰, 姚官生, 张庆军. 化学浴沉积PbSe多晶薄膜及其光电性能初探[J]. 红外技术, 2009, 31(10): 610-613. DOI: 10.3969/j.issn.1001-8891.2009.10.013
引用本文: 陈凤金, 司俊杰, 姚官生, 张庆军. 化学浴沉积PbSe多晶薄膜及其光电性能初探[J]. 红外技术, 2009, 31(10): 610-613. DOI: 10.3969/j.issn.1001-8891.2009.10.013
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CHEN Feng-jin, SI Jun-jie, YAO Guan-sheng, ZHANG Qing-jun. PbSe Polycrystalline Film by Chemical Bath Deposition and It's Photoelectricity Properties[J]. Infrared Technology , 2009, 31(10): 610-613. DOI: 10.3969/j.issn.1001-8891.2009.10.013
Citation: CHEN Feng-jin, SI Jun-jie, YAO Guan-sheng, ZHANG Qing-jun. PbSe Polycrystalline Film by Chemical Bath Deposition and It's Photoelectricity Properties[J]. Infrared Technology , 2009, 31(10): 610-613. DOI: 10.3969/j.issn.1001-8891.2009.10.013
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化学浴沉积PbSe多晶薄膜及其光电性能初探

PbSe Polycrystalline Film by Chemical Bath Deposition and It's Photoelectricity Properties

    摘要
  • 摘要: 分别以硒脲和硒粉为Se2-制备剂的主要原料,用化学浴沉积法制备了PbSe多晶薄膜.对所制备薄膜用形貌、XRD、TEM和红外透射谱等方法进行表征分析.两种制备方法均获得了结晶度良好的PbSe多晶薄膜.以硒粉所制备PbSe膜颗粒度为1 μm,以硒脲所制备的薄膜颗粒度为0.3μm,小颗粒薄膜出现红外吸收限蓝移现象.测得由所制备的薄膜得到PbSe光导型探测器原型器件的电压响应率为1200V/W.

     

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