Citation: | ZHOU Weijia, GONG Xiaoxia, CHEN Dongqiong, XIAO Tingting, SHANG Falan, YANG Wenyun. Effect of Annealing on C-V Characteristics of InSb Metal-Insulator-Semiconductor Devices[J]. Infrared Technology , 2022, 44(4): 351-356. |
[1] |
周冠山. 光伏型锑化铟红外探测器零偏结阻抗结面积乘积的分析[J]. 航空兵器, 1999(1): 10-17. https://www.cnki.com.cn/Article/CJFDTOTAL-HKBQ199901003.htm
ZHOU G S. Analysis of zero bias junction impedance and junction area product of photovoltaic InSb infrared detector[J]. Aero Weaponry, 1999(1): 10-17 https://www.cnki.com.cn/Article/CJFDTOTAL-HKBQ199901003.htm
|
[2] |
Bennett B R, Ancona M G, Boos J B. Compound semiconductors for low-power p-channel field-effect transistors[J]. MRS Bulletin, 2009, 34(7): 530-536. doi: 10.1557/mrs2009.141
|
[3] |
Pawlowski J, Szumniak P, Bednarek S. Electron spin rotations induced by oscillating Rashba interaction in a quantum wire[J]. Physical Review B, 2016, 93(4): 045309. doi: 10.1103/PhysRevB.93.045309
|
[4] |
CHEN Y, HUANG S, PAN D, et al. Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet[J]. Npj 2D Materials and Applications, 2021, 5(1): 1-8. doi: 10.1038/s41699-020-00190-0
|
[5] |
常虎东. 高迁移率InGaAs沟道MOSFET器件研究[D]. 北京: 中国科学院大学, 2013.
CHANG H D. Research on High Mobility InGaAs Channel MOSFET Devices[D]. Beijing: University of Chinese Academy of Sciences, 2013.
|
[6] |
Trinh H D, Nguyen M T, Lin Y C, et al. Band alignment parameters of Al2O3/InSb metal-oxide-semiconductor structure and their modification with oxide deposition temperatures[J]. Applied Physics Express, 2013, 6(6): 1-3.
|
[7] |
Black L E. New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface[D]. Canberra: The Australian National University, 2015.
|
[8] |
Baik M, Kang H K, Kang Y S, et al. Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer deposition[J]. Scientific Reports, 2017, 7(1): 1-11. doi: 10.1038/s41598-016-0028-x
|
[9] |
Kim H S, Ok I, ZHANG M, et al. A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer[J]. Applied Physics Letters, 2008, 93(6): 062111. doi: 10.1063/1.2972107
|
[10] |
Vavasour O J, Jefferies R, Walker M, et al. Effect of HCl cleaning on InSb-Al2O3 MOS capacitors[J]. Semiconductor Science and Technology, 2019, 34(3): 035032. doi: 10.1088/1361-6641/ab0331
|
[11] |
Luc Q H, CHANG E Y, Trinh H D, et al. Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitors[J]. Japanese Journal of Applied Physics, 2014, 53(4S): 04EF04. doi: 10.7567/JJAP.53.04EF04
|
[12] |
Vavasour O J. Dielectrics for Narrow Bandgap Ⅲ-Ⅴ Devices[D]. Coventry: University of Warwick, 2018.
|
[13] |
Winter R, Ahn J, Mcintyre P C, et al. New method for determining flat-band voltage in high mobility semiconductors[J]. Journal of Vacuum Science & Technology B Microelectronics & Nanometer Structures, 2013, 31(3): 0604.
|
[14] |
McNutt M, Sah C T. Determination of the MOS oxide capacitance[J]. Journal of Applied Physics, 1975, 46(9): 3909-3913. doi: 10.1063/1.322138
|
[15] |
Walstra S V, Sah C T. Extension of the McNutt-Sah method for measuring thin oxide thicknesses of MOS devices[J]. Solid State Electronics, 1998, 4(42): 671-673.
|
[16] |
Maserjian J, Petersson G, Svensson C. Saturation capacitance of thin oxide MOS structures and the effective surface density of states of silicon[J]. Solid-state Electronics, 1974, 17: 335-339. doi: 10.1016/0038-1101(74)90125-7
|
[17] |
Riccò B, Olivo P, Nguyen T, et al. Oxide-thickness determination in thin-insulator MOS structures[J]. IEEE Transactions on Electron Devices, 1988, 35(4): 432-438. doi: 10.1109/16.2476
|
[18] |
WEI D. Study of High Dielectric Constant Oxides on GaN for Metal Oxide Semiconductor Devices[D]. Manhattan: Kansas State University, 2014.
|
[19] |
Lee W C, Cho C J, Choi J H, et al. Correct extraction of frequency dispersion in accumulation capacitance in InGaAs metal-insulator -semiconductor devices[J]. Electronic Materials Letters, 2016, 12(6): 768-772. doi: 10.1007/s13391-016-6226-7
|
[20] |
Taoka N, Yokoyama M, Kim S H, et al. Influence of interface traps inside the conduction band on the capacitance-voltage characteristics of InGaAs metal-oxide-semiconductor capacitors[J]. Applied Physics Express, 2016, 9(11): 111202. doi: 10.7567/APEX.9.111202
|