Citation: | LI Junbin, LIU Aiming, JIANG Zhi, KONG Jincheng, LI Dongsheng, LI Yanhui, ZHOU Xuchang, YANG Wen. Investigation of Energy Band Structures of InAs/GaSb and M Structure Superlattices[J]. Infrared Technology , 2021, 43(7): 622-628. |
[1] |
Rhiger D R. Performance Comparison of Long-Wavelength InfraredType Ⅱ Superlattice Devices with HgCdTe[J]. J. Electron Mater. , 2011, 40: 1815. doi: 10.1007/s11664-011-1653-6
|
[2] |
Sai Halasz G A, Tsu R, Esaki L. A new semiconductor superlattice[J]. Appl. Phys. Lett. , 1977, 30: 651. doi: 10.1063/1.89273
|
[3] |
Smith D L, Mailhiot C. Proposal for strained type Ⅱ superlattice infrared detectors[J]. J. Appl. Phys. , 1987, 62: 2545. doi: 10.1063/1.339468
|
[4] |
Youngsdale E R, Meyer J R, Hoffman C A, et al. Auger lifetime enhancement in InAs-Ga1-xInxSb superlattices[J]. Appl. Phys. Lett. , 1994, 64: 3162. doi: 10.1063/1.111325
|
[5] |
Rogalski A, Martyniuk P, Kopytko M. InAs/GaSb type-Ⅱ superlattice infrared detectors: Future prospect[J]. Appl. Phys. Rev. , 2017(4): 031304. http://adsabs.harvard.edu/abs/2017ApPRv...4c1304R
|
[6] |
Nguyen B M, Hoffman D, Delaunay PY, et al. Dark current suppression in type Ⅱ InAs/GaSb superlattice long wavelength infrared photodiodes with M-structure barrier[J]. Appl. Phys. Lett. , 2007, 91: 163511. doi: 10.1063/1.2800808
|
[7] |
Gunapala S D, Ting D Z, Hill C J, et al. Demonstration of a 1024×1024 Pixel InAs-GaSb Superlattice Focal Plane Array[J]. IEEE Photon. Technol. Lett. , 2010, 22: 1856. doi: 10.1109/LPT.2010.2089677
|
[8] |
Klipstein P C, Avnon E, Benny Y, et al. InAs/GaSb Type Ⅱ superlattice barrier devices with a low dark current and a high quantum efficiency[C]//Proc. of SPIE, 2014, 9070: 90700U.
|
[9] |
Vurgaftman I, Aifer E H, Canedy C L, et al. Graded band gap for dark-current suppression in long-wave infrared W-structured type-Ⅱ superlattice photodiodes[J]. Appl. Phys. Lett. , 2006, 89: 121114. doi: 10.1063/1.2356697
|
[10] |
XU W, LI L L, DONG H M, et al. Band hybridization and spin-splitting in InAs/AlSb/GaSb type Ⅱ and broken-gap quantum wells[J]. J. Appl. Phys. , 2010, 108: 053709. doi: 10.1063/1.3476059
|
[11] |
CHUANGS L. Physics of Photonic Devices[M]. New York: Wiley, 2nd ed. 2009.
|
[12] |
Vurgaftman I, Meyer J R, Ram-Mohan L R. Band parameters for Ⅲ–V compound semiconductors and their alloys[J]. J. Appl. Phys., 2001, 89: 5815. doi: 10.1063/1.1368156
|
[13] |
Shun Lien Chuang. Efficient band-structure calculations of strained quantum wells[J]. Phys. Rev. B, 1991, 43: 9649. doi: 10.1103/PhysRevB.43.9649
|
[14] |
Nakamura K, Shimizu A, Koshiba M, et al. Finite-element analysis of the miniband structures of semiconductor superlattices with arbitrary periodic potential profiles[J]. IEEE J. Quantum Electron., 1991, 27: 2053. http://ieeexplore.ieee.org/document/83413
|
[15] |
Chuang S L, Chang C S. A band-structure model of strained quantum-well wurtzite semiconductors[J]. Semicond. Sci. Technol. , 1997, 12: 252. doi: 10.1088/0268-1242/12/3/004
|
[16] |
Davies J H. The Physics of Low-Dimensional Semiconductors: An Introduction[M]. Cambridge: Cambridge University Press, 2005.
|
[17] |
Frank Fuchs, N Herres, J Schmitz, et al. InAs/GaSb superlattices characterized by high-resolution x-ray diffraction and infrared optical spectroscopy[C]//Proc. of SPIE, 1996, 70: 2554.
|