Position-Dependent Conductivity Transition by Intrinsic Defects in Cd_1-xZn_xTe Crystal

In this study, the formation of a position-dependent conductivity transition in Cd_1-xZn_xTe crystals is investigated. The results indicate that the transition from p- to n-type Cd_1-xZn_xTe (x = 0.04) can be ascribed to the formation of the V_Cd-Cd_i interface. Cd vacancies (V_Cd) are easily generated in the Te-rich condition crystal growth process and are responsible for the p-type conductivity. However, Cd vacancies are filled and the n-type defect, Cd interstitial (Cd_i), form in the Cd-rich condition. This leads to the transition from p-type to n-type conductivity during the growth of Cd_1-xZn_xTe (x = 0.04).