Effect of in-Situ Post-annealing on the Second Phase Inclusion Defects

YUAN Shouzhang; ZHAO Wen; KONG Jincheng; WANG Jingyu; JIANG Jun; ZHAO Zenglin; JI Rongbin

Volume 43 Issue 7

Jul. 2021

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YUAN Shouzhang, ZHAO Wen, KONG Jincheng, WANG Jingyu, JIANG Jun, ZHAO Zenglin, JI Rongbin. Effect of in-Situ Post-annealing on the Second Phase Inclusion Defects[J]. Infrared Technology , 2021, 43(7): 615-621.

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YUAN Shouzhang, ZHAO Wen, KONG Jincheng, WANG Jingyu, JIANG Jun, ZHAO Zenglin, JI Rongbin. Effect of in-Situ Post-annealing on the Second Phase Inclusion Defects[J]. Infrared Technology , 2021, 43(7): 615-621.

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Effect of in-Situ Post-annealing on the Second Phase Inclusion Defects

Kunming Institute of Physics, Kunming 650223, China

Received Date: 2021-05-03
Rev Recd Date: 2021-06-28
Publish Date: 2021-07-01

Abstract

Abstract

Second-phase-inclusion defects in Bridgman-grown CdZnTe crystals were decreased via post-growth in-situ annealing combined with excess Cd in CdZnTe ingots. Based on the formation mechanism of the second-phase-inclusion defects in Bridgman-grown CdZnTe, the relationship between second-phase-inclusion defects and annealing temperature was studied. The size of second-phase-inclusion defects was reduced to less than 10 μm and their density to less than 250 cm^-2 in CdZnTe at an optimized in-situ post-annealing temperature.
- CdZnTe,
- second phase inclusion defects,
- in-situpost-annealing

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References(14)

References

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