Au-Doped HgCdTe Infrared Material and Device Technology

SONG Linwei; KONG Jincheng; LI Dongsheng; LI Xiongjun; WU Jun; QIN Qiang; LI Lihua; ZHAO Peng

Volume 43 Issue 2

Mar. 2021

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SONG Linwei, KONG Jincheng, LI Dongsheng, LI Xiongjun, WU Jun, QIN Qiang, LI Lihua, ZHAO Peng. Au-Doped HgCdTe Infrared Material and Device Technology[J]. Infrared Technology , 2021, 43(2): 97-103.

Citation:

SONG Linwei, KONG Jincheng, LI Dongsheng, LI Xiongjun, WU Jun, QIN Qiang, LI Lihua, ZHAO Peng. Au-Doped HgCdTe Infrared Material and Device Technology[J]. Infrared Technology , 2021, 43(2): 97-103.

SONG Linwei, KONG Jincheng, LI Dongsheng, LI Xiongjun, WU Jun, QIN Qiang, LI Lihua, ZHAO Peng. Au-Doped HgCdTe Infrared Material and Device Technology[J]. Infrared Technology , 2021, 43(2): 97-103.

Citation:

SONG Linwei, KONG Jincheng, LI Dongsheng, LI Xiongjun, WU Jun, QIN Qiang, LI Lihua, ZHAO Peng. Au-Doped HgCdTe Infrared Material and Device Technology[J]. Infrared Technology , 2021, 43(2): 97-103.

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Au-Doped HgCdTe Infrared Material and Device Technology

Kunming Institute of Physics, Kunming 650223, China

Received Date: 2020-08-12
Rev Recd Date: 2020-09-05
Publish Date: 2021-02-20

Abstract

Abstract

The minority carrier lifetime of p-type HgCdTe materials can be improved significantly by using Au atoms instead of Hg vacancies, which have been considered as deep-level energy recombination centers; consequently, the dark current of n-on-p HgCdTe devices reduced and performance improved. Further, Au doping is helpful for developing high-performance n-on-p LWIR/VLWIR and high operating temperature (HOT) MWIR HgCdTe infrared detectors with high resolution and high sensitivity. In this paper, Au-doped HgCdTe IR material and device technologies were reviewed. Critical processes and the effect of Au doping on the device properties were discussed as well.
- HgCdTe,
- Au doping,
- minority carrier lifetime,
- dark current,
- stability

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References(22)

References

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