Research Progress in the Design and Application of Shortwave Infrared Imaging Systems
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摘要: 短波红外光学成像是目前国际上研究热点之一,通过接收短波红外辐射进行探测和成像,可得到更多目标物体的信息,弥补了可见光成像的不足,从而实现全波段成像。本文从短波红外光学成像的光学特性、成像原理和光学系统结构设计出发,比较了短波红外与可见光和中长波红外成像的优缺点,并简单介绍了短波红外成像系统中铟镓砷探测器的特点和国内外发展现状,以及介绍了短波红外成像在不同领域的应用情况,最后,对短波红外成像未来的发展进行了展望。Abstract: Shortwave infrared imaging is a popular topic worldwide. By receiving shortwave infrared radiation for detection and imaging, more information about the target objects can be obtained, compensating for the shortage of visible light imaging to achieve full-band imaging. Based on the optical characteristics, imaging principle, and optical system structure design of shortwave infrared optical imaging, this study compares the advantages and disadvantages of shortwave infrared imaging with visible light and medium-long wave infrared imaging. It briefly introduces the characteristics of indium gallium as a detector in shortwave infrared imaging systems, its development status at home and abroad, and the application of shortwave infrared imaging in different fields. Finally, future developments of shortwave infrared imaging are discussed.
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Key words:
- short wave infrared imaging /
- optical design /
- InGaAs detector
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表 1 不同材料折射率与透射范围
Table 1. Refractive index and transmission range of different materials
Material Refractive index Abbe number Coefficient of thermal expansion(×10-6) Transmission band/μm MgF2 1.3777 106.22 9.4 0.2~7 CaF2 1.4338 94.996 18.9 0.23~9.7 BaF2 1.4655 81.608 18.4 0.23~10.3 ZnS 2.3672 15.305 6.6 0.42~18 F-SILICA 1.4585 67.821 0.51 0.21~3.71 H-K9L 1.5032 64.2 76 0.29~2.4 H-FK61B 1.4875 81.605 127 0.302~2.325 H-FK95N 1.4378 94.523 144 0.302~2.325 H-QF14 1.5955 39.22 78 0.36~2.4 表 2 国外代表性InGaAs探测器厂家及器件性能
Table 2. Foreign representative InGaAs detector manufacturers and device performance
Country Manufacturer Array specifications and pixel dimensions Response wavelength /μm Quantum efficiency QE% America SUI 1280×1024/12 μm 0.9(0.7)-1.7 μm ≥ 65% from 0.9 μm to 1.6 μm Japan HORIBA 1024×1
25 μm×500 μm0.8-1.7μm <80% from 1 μm to 1.6 μm Britain Raptorphotonics 1280×1024/10μm 0.4 - 1.7μm Peak<85%(<73% @1.064μm, <80% @1.55μm) Germany Allied Vision echnologies 640×512/15 μm 0.9 μm to 1.7 μm >75% France Sofradir 640×512/15 μm 0.9(0.4)~1.7 μm <70% from 1 μm to 1.6 μm 表 3 国内主要InGaAs科研生产单位情况
Table 3. Major domestic InGaAs research and production units
Unit Characteristics Representative product Application direction Shanghai Institute of Technical Physics Professional infrared detector development unit, with the technical capability of spectral extension (-2.4 μm) Area array detector:
640×512@25 μm
1280×1024@15 μmAerospace application Chongqing photoelectric Technology Research Institute(CLP 44 Institute) Has a more mature unit detector and InGaAs - APD avalanche detector products Units &APD devices:
320×256@30 μm
640×512@15 μmPhotoelectric communication Kunming Institute of Physics Professional infrared detector development unit, took the lead in the development of digital, wide spectrum InGaAs detector, with strong scientific research, production and application promotion capabilities Area array detector:
640×512/15 μm,
1280×1024/10 μm
Line detector:
1024×2/12.5 μm、512×2/25 μmAerospace and civil fields Shanxi Guohui optoelectronic technology Co., LTD Preparation of high performance focal plane detector, movement design and application Area array detector:
320×256@30 μm
640×512@15-25 μmCivil domain Xi 'an Liding Optoelectronic Technology Co., LTD Movement development Area array detector:
320×256@30 μm
640×512@15-25 μmCivil domain Beijing Lingyun Light Technology Group With industrial detection sorting, spectrum analysis system development and application capabilities 640×512@15 μm
1024×2@12.5 μmSystem development applications, such as spectrometers -
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