基于非平衡模式的碲镉汞高工作温度探测器

俞见云; 孔金丞; 覃钢; 杨晋; 宋林伟; 丛树仁; 李艳辉

基于非平衡模式的碲镉汞高工作温度探测器

昆明物理研究所，云南昆明 650223

基金项目:

基础加强计划技术领域项目 2019-JCJQ-JJ527

详细信息

作者简介:
俞见云（1990-），男，云南曲靖人，工程师，硕士研究生，研究方向是光电材料。E-mail: y976321338@163.com

通讯作者:
孔金丞（1979-），男，云南南华人，研究员级高级工程师，博士生导师，主要从事光电材料与器件研究。E-mail: Kongjincheng@163.com

中图分类号: TN215
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- 文章访问数: 271
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- 被引次数: 0
出版历程
- 收稿日期: 2021-12-15
- 修回日期: 2022-04-11
- 刊出日期: 2023-01-20

High Operation Temperature Non-equilibrium Photovoltaic HgCdTe Devices

Kunming Institute of Physics, Kunming 650223, China

摘要

摘要: 本文回顾了当前国内外高工作温度碲镉汞红外探测器的技术路线和相应的器件性能，在碲镉汞器件暗电流的温度特性分析的基础上，讨论了基于非平衡工作模式的碲镉汞探测器的基本原理、器件结构设计和暗电流机制，探讨了吸收层全耗尽碲镉汞器件性能与器件结构参数、材料晶体质量的关系，明确了其技术要点和难点，展望了碲镉汞高工作温度器件技术的发展趋势。
- 碲镉汞 /
- 非平衡 /
- 俄歇抑制 /
- 全耗尽 /
- 高工作温度
Abstract: In this paper, we review both domestic and foreign state-of-the-art high operation temperature (HOT) MCT infrared detector technologies and their corresponding device performance. Based on the analysis of the characteristics of dark current versus temperature, we summarize the working principles under the non-equilibrium operation mode, device structure design and the origin of the dark current. We also determined the relationship between the performance of the fully depleted absorber device, device structure parameters, and material quality. We also discuss the technical key points of the development of a non-equilibrium operation-mode HOT infrared photodetector. Further development HOT MCT infrared detector technologies is expected.
- HgCdTe /
- non-equilibrium /
- auger suppression /
- fully depleted /
- HOT

HTML全文

图 1 不同工作模式碲镉汞器件能带示意图: (a) 传统非俄歇抑制型p-on-n; (b) 俄歇抑制型; (c) 深度俄歇抑制型; (d) 全耗尽型

Figure 1. Comparison of the operation of a conventional p-on-n HgCdTe diode (a) Auger-suppressed diode (b) Auger-suppressed diode with current below Rule 07 (c) and fully-depleted P-ν-N diode at the radiative limit (d)

下载: 全尺寸图片幻灯片

图 2 排斥结电子（实线）和空穴（虚线）浓度分布

Figure 2. Electron concentration (solid) and hole concentration (dashed) for a n⁺ν excluding structure

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图 3 不同浓度下实现碲镉汞中波5 μm吸收层全耗尽所需偏压

注：中间插图为特定掺杂浓度下实现全耗尽需要的偏压

Figure 3. Calculated reverse voltage versus doping concentration required to deplete a 5 μm-thick MWIR HgCdTe absorber.

Inset: absorber depletion thickness versus reverse bias and selected doping concentration

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图 4 截止波长10 μm的俄歇抑制p-on-n探测器暗电流密度随温度变化曲线

Figure 4. Auger-suppressed dark current density for a 10 μm cutoffdetector versus temperature and doping

下载: 全尺寸图片幻灯片

图 5 不同组分下Law 19与Rule 07计算得到暗电流密度随温度变化曲线

Figure 5. Calculated current density versus temperature using Law 19 and Rule 07

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图 6 全耗尽型器件暗电流与其他体系探测器暗电流对比

Figure 6. Calculated current density of fully depleted device versus 1/(λ_cT) products

下载: 全尺寸图片幻灯片

图 7 国内主要研究机构报道高温碲镉汞器件性能

Figure 7. NETD versus temperature reported by major domestic reserch institutions

下载: 全尺寸图片幻灯片

表 1 国外主流公司碲镉汞HOT探测器产品^[27-30]

Table 1. High operating temperature IRFPAS of MCT from foreign companies

Company	Lynred(Sofradir)	AIM	Selex ES	LEONARDO- DRS
Product	GALATEA MW	HiPIR-Engine	Firefly Camera	ZAFIRO₆₄₀^® MICRO
Array format	640×512	1024×768	640×512	640×480
Tech route	p-on-n	p-on-n	P⁺/ν(π)/N⁺	P⁺/P^-(N^-)/N⁺
Detector pitch/μm	15	10	16	12
Spectral response/μm	3.6~4.2	3.4~4.8	3.7~4.95	3.4~4.8
Operating temperature/K	150	160	160	160
Well capcity/Me^-	~2.3	~4	~7	~7.7
Weight/g	230	360	550	272
Power steady state/W	~2.7@20℃	~4@20℃	~5	~5@23℃
F#	4/5.5	2.2/4	4	3.25/4
Frame rate/Hz	60	50/60	60	30/60
NETD/mK	~35(300K)	~20（300K）	25	~25
Operability	＞99.5%	＞99%	-	99.5%
Cooldown time/mins	~3@20℃	~3@20℃	-	2.5@23℃

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