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镱银阴极对顶发射白光OLED器件光电性能的影响研究

杨启鸣 高思博 王灿 段良飞 钱福丽 段谦 张杰 王光华 鲁朝宇 段瑜

杨启鸣, 高思博, 王灿, 段良飞, 钱福丽, 段谦, 张杰, 王光华, 鲁朝宇, 段瑜. 镱银阴极对顶发射白光OLED器件光电性能的影响研究[J]. 红外技术, 2021, 43(12): 1207-1211.
引用本文: 杨启鸣, 高思博, 王灿, 段良飞, 钱福丽, 段谦, 张杰, 王光华, 鲁朝宇, 段瑜. 镱银阴极对顶发射白光OLED器件光电性能的影响研究[J]. 红外技术, 2021, 43(12): 1207-1211.
YANG Qiming, GAO Sibo, WANG Can, DUAN Liangfei, QIAN Fuli, DUAN Qian, ZHANG Jie, WANG Guanghua, LU Chaoyu, DUAN Yu. Study on the Effects of Yb: Ag Alloy Cathode on the Photoelectric Performance of the Top Emitting White Organic Light-emitting Devices[J]. Infrared Technology , 2021, 43(12): 1207-1211.
Citation: YANG Qiming, GAO Sibo, WANG Can, DUAN Liangfei, QIAN Fuli, DUAN Qian, ZHANG Jie, WANG Guanghua, LU Chaoyu, DUAN Yu. Study on the Effects of Yb: Ag Alloy Cathode on the Photoelectric Performance of the Top Emitting White Organic Light-emitting Devices[J]. Infrared Technology , 2021, 43(12): 1207-1211.

镱银阴极对顶发射白光OLED器件光电性能的影响研究

基金项目: 

国家自然科学基金项目 61604064

云南省应用基础研究面上项目 2016FB112

云南省技术创新人才培养项目 202105AD160057

详细信息
    作者简介:

    杨启鸣(1990-),男,云南临沧人,硕士,工程师,主要从事OLED器件开发。E-mail:yangqiming@oleid.com

    通讯作者:

    段瑜(1981-),女,云南曲靖人,硕士,研究员级高级工程师,主要从事OLED器件开发。E-mail:duanyu@oleid.com

  • 中图分类号: TN312.8

Study on the Effects of Yb: Ag Alloy Cathode on the Photoelectric Performance of the Top Emitting White Organic Light-emitting Devices

  • 摘要: 研制了以镱银合金为透明阴极的顶发射白光OLED器件。采用ITO/NPB: LiQ(5%)(10 nm)/TCTA(20 nm)/FIrpic+3.5% Ir(ppy)3+0.5%Ir(MDQ)2(acac)(25 nm)/TPBI(10 nm)/LiF(5 nm)/Yb: Ag (X%)(X nm)器件结构,在相同镱银比例下,蒸镀不同厚度的镱银合金阴极制备了新型顶发射白光OLED器件,获得了优化的镱银合金厚度为12 nm;固定镱银阴极厚度,蒸镀不同比例的镱银合金阴极制备了新型顶发射白光OLED器件,探究不同比例的镱银合金对有机电致发光器件的影响。结果表明,当镱银电极的掺杂比例为10:1时,器件的性能最佳,在20 mA/cm2电流密度下,器件的驱动电压为2.3 V,亮度为1406 cd/m2,色坐标为(0.3407, 0.3922)。
  • 图  1  顶发射白光OLED显示器件结构及有机材料结构

    Figure  1.  Configuration of the top emitting white OLED device and molecular structures of the organic materials

    图  2  不同厚度的Yb: Ag阴极合成的OLED器件

    Figure  2.  Various thickness of Yb: Ag cathode synthesis of OLED devices

    图  3  不同掺杂比例的Yb: Ag阴极合成的OLED器件

    Figure  3.  Different doping ratios of Mg: Ag cathode synthesis of OLED devices

    表  1  不同Yb: Ag阴极厚度下器件的性能参数

    Table  1.   Performance parameters of the device at various thickness of Yb: Ag

    Yb: Ag thickness/nm Voltage/V Luminance/(cd/cm2) CIE(X, Y)
    11 4.12 1452 0.3373, 0.3967
    12 4.08 1387 0.3263, 0.3943
    14 4.06 1293 0.3162, 0.3936
    16 4.05 1201 0.3038, 0.3896
    20 4.04 1007 0.2812, 0.3810
    下载: 导出CSV

    表  2  不同Yb: Ag掺杂比例的器件性能参数

    Table  2.   Performance parameters of the device at different Yb : Ag doping ratios

    Yb: Ag ratio Voltage/V Luminance/(cd/cm2) CIE(X, Y)
    10:0.8 3.99 1459 0.3426, 0.3940
    10:1 3.99 1406 0.3407, 0.3922
    10:1.5 3.97 1329 0.3325, 0.3901
    10:2 3.98 1230 0.3260, 0.3850
    下载: 导出CSV
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出版历程
  • 收稿日期:  2021-07-09
  • 修回日期:  2021-08-20
  • 刊出日期:  2021-12-20

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