Review on the Fabrication and Optical Performance of ZnS Bulk Materials
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摘要: 多光谱波段透过型ZnS体材料在整流罩、红外透镜、红外窗口等领域具有广泛应用。本文全面梳理和总结了ZnS体材料制备技术的最新研究进展,包括热压技术、化学气相沉积+热等静压技术等。分析了不同制备方法对ZnS体材料光学性能的影响因素。最后展望了ZnS体材料的未来发展方向。Abstract: Infrared ZnS bulk material is widely used in domes, infrared lens and windows. The fabrication technology of ZnS bulk material is reviewed including hot press (HP) and chemical vapor deposition + hot isostatic press (CVD+HIP). The influence of fabrication process on optical properties is analyzed. It is concluded with the technology trends prospects for the future development of bulk ZnS bulk material.
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图 1 CVT工艺步骤示意图[14]:(a) 单质硫升华提纯;(b)单质锌升华提纯;(c)气相合成ZnS;(d)ZnS晶体生长
Figure 1. Schematic diagram of the CVT process sequence: (a) Purification of sulfur by sublimation; (b) Purification of Zinc by sublimation; (c) Synthesis via vapor phase; (d) Crystal growth
表 1 ZnS体材料制备方法及工艺数据[11]
Table 1. Growth methods and fabrication parameters of ZnS bulk materials
Method Fabrication Conditions Deposition (production) rate/(μm/h) 10.6 μm transmittance/% (thickness/mm) T/℃ P/Pa CVD 630–800 < 104 50–100 72 (6) Sublimation > 1000 1–10 100–1000 ≤ 70 (1.5) Hot pressing 900–1000 107–108 > 1000 > 70 (2) Melt growth > 1830 106–107 – 58 (3.5) 表 2 ZnS-std晶体生长的工艺条件参数,Zn(v)代表Zn蒸汽
Table 2. Deposition conditions for ZnS-std, Zn(v) is short for Zn vapor
Zn(v)/H2S Deposition temperature/℃ Deposition pressure/MPa Deposition rate/(μm⋅h-1) 1−1.75 630−730 4−8 72 1.25−1.67 660−680 4−6 53 1.05−1.5 620−720 4 60 1−2 630−650 1−3 - ~1.0 650−750 0.5−1 80−100 0.5−1.25 450−600 0.5−1.5 - 1.0 550−650 0.5−1 34 0.4−1 650−750 0.5−7.2 - 0.05−2 530−750 5.3 150 0.8−1.4 600−730 5−10 30−70 -
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