硫化锌体材料制备及其光学性能研究进展

吴绍华; 赵劲松; 赵跃进; 杨伟声; 姜杰; 李茂忠; 董汝昆; 母婷婷; 郑丽和

硫化锌体材料制备及其光学性能研究进展

吴绍华^{1, 2, 3,},
赵劲松^1, ,,
赵跃进²,
杨伟声³,
姜杰¹,
李茂忠^{1, 3},
董汝昆³,
母婷婷³,
郑丽和^4,

1.
昆明物理研究所, 云南昆明 650223
2.
北京理工大学, 北京 100081
3.
云南北方光学科技有限公司, 云南昆明 650217
4.
云南大学物理与天文学院, 云南省高校光电器件工程重点实验室, 云南昆明 650550

基金项目:

云南省科技创新强省计划项目 2014AA023

国家自然科学基金 62165017

云南省科技厅基础研究项目 202201AS070013

云南省科技厅基础研究项目 202101AT070162

详细信息

作者简介:
吴绍华（1976-），男，博士研究生，高级工程师，研究方向：红外光学材料。E-mail：13577018379@163.com

通讯作者:
赵劲松（1972-），男，教授级高级工程师，博士，主要从事红外热像仪总体技术、装配与测试技术、偏振成像技术及多光谱成像技术等方面的研究。E-mail：zhaojinsong@tsinghua.org.cn

郑丽和（1983-），女，教授，博士，主要从事激光材料与器件及其应用、先进室温键合技术在激光领域的应用研究

中图分类号: O782; O734
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出版历程
- 收稿日期: 2021-08-07
- 修回日期: 2021-09-13
- 刊出日期: 2022-05-20

Review on the Fabrication and Optical Performance of ZnS Bulk Materials

1.
Kunming Institute of Physics, Kunming 650223, China
2.
Beijing Institute of Technology, Beijing 100081, China
3.
Yunnan KIRO Photonics Co., Ltd., Kunming 650217, China
4.
Key Laboratory of Yunnan Provincial Higher Education Institutions for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming 650500, China

摘要

摘要: 多光谱波段透过型ZnS体材料在整流罩、红外透镜、红外窗口等领域具有广泛应用。本文全面梳理和总结了ZnS体材料制备技术的最新研究进展，包括热压技术、化学气相沉积+热等静压技术等。分析了不同制备方法对ZnS体材料光学性能的影响因素。最后展望了ZnS体材料的未来发展方向。
- 硫化锌体材料 /
- 红外光学窗口 /
- 热压法 /
- 化学气相沉积 /
- 热等静压
Abstract: Infrared ZnS bulk material is widely used in domes, infrared lens and windows. The fabrication technology of ZnS bulk material is reviewed including hot press (HP) and chemical vapor deposition + hot isostatic press (CVD+HIP). The influence of fabrication process on optical properties is analyzed. It is concluded with the technology trends prospects for the future development of bulk ZnS bulk material.
- ZnS bulk material /
- infrared optical window /
- hot press technology /
- chemical vapor deposition /
- hot isostatic press

HTML全文

图 1 CVT工艺步骤示意图^[14]：(a) 单质硫升华提纯；(b)单质锌升华提纯；(c)气相合成ZnS；(d)ZnS晶体生长

Figure 1. Schematic diagram of the CVT process sequence: (a) Purification of sulfur by sublimation; (b) Purification of Zinc by sublimation; (c) Synthesis via vapor phase; (d) Crystal growth

下载: 全尺寸图片幻灯片

图 2 热等静压处理前后ZnS-std的特征吸收光谱

Figure 2. Typical absorption spectrum of ZnS-std before and after HIP process

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图 3 不同沉积温度条件下ZnS-std晶体表面形貌及颜色

(a)600℃，(b)670℃，(c)720℃，(d)750℃

Figure 3. ZnS-std under different deposited temperatures

(a)600℃, (b)670℃, (c)720℃, (d)750℃

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图 4 HP-ZnS及其光谱透射曲线^[19]

Figure 4. Infrared transmission spectrum of the sintered ZnS ceramics and the sintered ZnS pellet (inset photo)^[19]

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图 5 ZnS-std和不同热等静压条件下ZnS-ms的能带边缘吸光度和可见-红外光谱图

Figure 5. Calculated band-edge extinction and VIS-FTIR spectra of ZnS-std and ZnS-ms

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图 6 不同尺度下ZnS-std（左）和ZnS-ms（右）的表面形貌

（A & B：光学显微；C & D：SEM；E & F：TEM）

Figure 6. ZnS-std (L) versus ZnS-ms (R) at various length scales

(A & B: optical micrographs; C & D: SEM; E & F: TEM)

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图 7 不同ZnS材料的光谱透过曲线（1.HP-ZnS，2.ZnS-std，3.IRTRAN2，4.ZnS-e，5.ZnS-ms）

Figure 7. Transmission of various ZnS materials: (1.HP-ZnS, 2.ZnS-std, 3.IRTRAN2, 4.ZnS-e, 5. ZnS-ms)

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表 1 ZnS体材料制备方法及工艺数据^[11]

Table 1. Growth methods and fabrication parameters of ZnS bulk materials

Method	Fabrication Conditions		Deposition (production) rate/(μm/h)	10.6 μm transmittance/% (thickness/mm)
Method	T/℃	P/Pa	Deposition (production) rate/(μm/h)	10.6 μm transmittance/% (thickness/mm)
CVD	630–800	< 10⁴	50–100	72 (6)
Sublimation	> 1000	1–10	100–1000	≤ 70 (1.5)
Hot pressing	900–1000	10⁷–10⁸	> 1000	> 70 (2)
Melt growth	> 1830	10⁶–10⁷	–	58 (3.5)

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表 2 ZnS-std晶体生长的工艺条件参数，Zn(v)代表Zn蒸汽

Table 2. Deposition conditions for ZnS-std, Zn(v) is short for Zn vapor

Zn(v)/H₂S	Deposition temperature/℃	Deposition pressure/MPa	Deposition rate/(μm⋅h^-1)
1−1.75	630−730	4−8	72
1.25−1.67	660−680	4−6	53
1.05−1.5	620−720	4	60
1−2	630−650	1−3	-
~1.0	650−750	0.5−1	80−100
0.5−1.25	450−600	0.5−1.5	-
1.0	550−650	0.5−1	34
0.4−1	650−750	0.5−7.2	-
0.05−2	530−750	5.3	150
0.8−1.4	600−730	5−10	30−70

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