基于VLPE技术的碲镉汞p-on-n双层异质结材料与器件研究进展

Research Progress on Materials and Devices of HgCdTe p-on-n Double Layer Heterojunction Grown by VLPE

摘要: 本文对比分析了碲镉汞p-on-n器件四种制备方式的优劣，其中，VLPE（Vertical Liquid Phase Epitaxy）技术具有原位As掺杂与高激活率的技术优势，是制备高性能p-on-n双层异质结器件的重要方式。针对该技术，从材料生长、器件工艺和器件性能方面回顾了国内外研究进展，讨论了国内外差距，明确了制约该技术发展的关键问题和技术难点，并提出了解决思路。最后，展望了VLPE技术p-on-n异质结器件的发展趋势。

Abstract: This paper compares four different fabrication methods for mercury cadmium telluride (HgCdTe) p-on-n devices. Among these methods, vertical liquid-phase epitaxy (VLPE) stands out because of its unique advantages, particularly the high activation rate of in situ arsenic (As) dopants. VLPE is an essential approach for producing high-performance p-on-n double heterojunction devices. This paper reviews the research progress, both domestically and internationally, covering material growth, device processes, and performance. The discrepancies between domestic and foreign research are discussed, and the key challenges and technical bottlenecks hindering VLPE technology development are identified. Several solutions have been proposed to solve this problem. This study provides insights into the future trends of VLPE technology for p-on-n heterojunction devices, which hold significant promise in semiconductor devices.